Adapted converter topologies for GaN power electronics

适用于 GaN 电力电子器件的自适应转换器拓扑

• 批准号: 277751567
• 负责人: Professorin Dr.-Ing. Sibylle Dieckerhoff
• 金额: --
• 依托单位: Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2016
• 资助国家: 德国
• 起止时间: 2015-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/277751567?language=en
• 关键词: Adapted; converter; topologies; GaN; power

Efficient energy conversion with power electronics is of continuously increasing importance in different areas as industry and automation, consumer electronics, transportation and electric grids, here especially concerning the integration of regenerative energy sources. Due to their excellent conducting and switching properties, power semiconductors based on Galliumnitride (GaN) offer the possibility to realize highly compact and at the same time highly efficient power converters. The technological option to manufacture bidirectional conducting and blocking transistors is promising in order to simplify existing and develop new converter topologies. In this research project, the limits of hard-switching GaN-converters in the kW power range is evaluated, making use of the bidirectional conduction behaviour of GaN normally-off transistors (HFETs) and applying optimized driver concepts and circuits. Bidirectional blocking GaN HFETs will be developed, manufactured and tested adapting the driver concept. Finally, the devices will be modelled. Using these models, alternative converter topologies will be simulated, evaluated and a demonstrator will be realized to show the potential of this new technology.

利用电力电子进行高效能量转换在工业和自动化、消费电子、交通和电网等不同领域中变得越来越重要，特别是在可再生能源的集成方面。由于其优异的导电和开关特性，基于氮化镓 (GaN) 的功率半导体为实现高度紧凑且同时高效的功率转换器提供了可能性。为了简化现有的转换器拓扑并开发新的转换器拓扑，制造双向传导和阻断晶体管的技术选择是有前途的。在该研究项目中，利用 GaN 常关晶体管 (HFET) 的双向传导行为并应用优化的驱动器概念和电路，评估了 kW 功率范围内的硬开关 GaN 转换器的极限。双向阻塞 GaN HFET 将根据驱动器概念进行开发、制造和测试。最后，将对设备进行建模。使用这些模型，将模拟、评估替代转换器拓扑，并实现演示器以展示这项新技术的潜力。