Improving GaN power transistor ruggedness by novel GaN-epi-wafers with improved thermal capabilities

通过具有改进热性能的新型 GaN 外延晶圆提高 GaN 功率晶体管的耐用性

• 批准号: 500397305
• 负责人: Professorin Dr.-Ing. Sibylle Dieckerhoff
• 金额: --
• 依托单位: Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen (IMWS)
• 依托单位国家: 德国
• 项目类别: Research Grants (Transfer Project)
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/500397305?language=en
• 关键词: Improving; GaN; power; transistor; ruggedness

The share of electrical energy in total energy sales worldwide is already 25% (2019) and will continue to increase significantly in the coming years to achieve the CO2 reduction targets, according to various scenarios up to 60% and more in 2050. For the resource-saving use of this energy, highly efficient power electronic solutions are needed, e.g. for industrial electric drives, for electromobility, for power supplies e.g. of data centers or for the integration of renewable energies. Power transistors based on the wide-bandgap semiconductor material gallium nitride (GaN) are increasingly making inroads into these markets for power electronic converters. The special material properties of GaN and the heterostructures used result in inherently highly- compact power semiconductors. These are characterized by very high achievable switching speeds with drastically reduced losses, thus enabling highly efficient and compact converters. However, the consequences of the high power density of GaN semiconductors are also high electric fields, high current densities and correspondingly large thermal gradients in the device. Optimal heat dissipation across the epi-wafer is essential for the realization of robust power transistors and can be achieved by optimizing the GaN epitaxial layers (GaN-Epi). For the evaluation of the robustness of GaN power transistor devices, critical application scenarios such as overload or short circuit have to be guaranteed by appropriate electrical test procedures, and the occurring thermally induced microstructural defect formations have to be evaluated. There are open questions, especially regarding the localization of heat sources in the device and the influence of trapping effects during dynamic processes, which are closely linked to the epitaxy and the technological implementation of the switches. This is where the proposed research project builds on the preliminary work in the DFG project "Adapted circuitry for GaN power electronics". The central research objective of RuggedGaN is to increase the robustness of GaN-based power devices by developing appropriately optimized GaN-epi semiconductor substrates with improved heat dissipation, and to provide the electrical, thermal and microstructure-based characterization methods required for process and device qualification.

全球电能在全球总能源销售中的份额已经为25％（2019年），并且在未来几年中将继续显着增加，以实现二氧化碳减少目标。 - 需要使用这种能量，高效的电力电子解决方案，例如对于工业电动驱动器，用于电动性，用于电源，例如数据中心或可再生能源的整合。基于宽带半导体材料氮化岩（GAN）的功率晶体管越来越多地进入这些市场的电力电子转换器。 GAN的特殊材料特性和使用的异质结构导致固有的高度紧凑功率半导体。这些特征的特征是非常高可实现的开关速度，损失大大降低，从而实现了高效和紧凑的转换器。但是，GAN半导体的高功率密度的后果也是高电场，高电流密度和相应的设备中热梯度。 Epi-Wafer上的最佳热量耗散对于实现强大的功率晶体管至关重要，可以通过优化GAN外延层（GAN-EPI）来实现。为了评估GAN功率晶体管设备的鲁棒性，必须通过适当的电测试程序来保证关键的应用程序（例如过载或短路），并且必须评估发生的热诱导的微结构缺陷地层。有一些开放的问题，尤其是关于设备中热源的定位以及在动态过程中捕获效应的影响，这与交换机的外观和技术实施密切相关。这是拟议的研究项目基于DFG项目“适用于GAN Power Electronics”的初步工作的地方。 Ruggedgan的中心研究目标是通过开发适当优化的GAN-EPI半导体底物来提高基于GAN的功率设备的鲁棒性，并提供改进的热量散热，并提供基于电气，热和微观结构的表征方法，用于过程和设备资格确认。 。