Conference: International Workshop on Nitride Semiconductors 2024

会议：2024 年氮化物半导体国际研讨会

• 批准号: 2421101
• 负责人: Ramon Collazo
• 金额: $ 3万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2024
• 资助国家: 美国
• 起止时间: 2024-03-01 至 2025-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2421101&HistoricalAwards=false
• 关键词: Conference; International; Workshop; Nitride; Semiconductors

Technical:The International Workshop on Nitride Semiconductors (IWN) is a renowned biennial academicconference with a rich history spanning 24 years. Focusing on cutting-edge research in III-Nitrides semiconductors, IWN is a global platform that brings together almost 1,000 experts, researchers, faculty, and students from around the world. In 2024, IWN is set to take place in Honolulu, Hawai'i, (November 3-8) promising to be a significant milestone in the field.This conference will bring together almost 1,000 participants from academy, industry, andgovernment to share their recent results in their respective III-Nitrides research. All theseparticipants come from around the world to discuss the latest progress in the area while enriching the community by introducing students and new scientists to the community.Non-Technical:The International Workshop on Nitride Semiconductors (IWN) 2024 holds immense significancefor the United States and the global semiconductor community. It serves as a beacon of innovation, collaboration, and inclusivity.The IWN conference is consistent with NSF efforts on funding opportunities for engineering research in microelectronics and semiconductors, specifically in the fields of Wide-bandgap and ultrawide- bandgap semiconductor devices and circuits. The funds will be used to partially cover student registrations and will provide 5 fellowships for junior faculty or students to fully cover their registrations from EPSCoR eligible jurisdictions.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

技术：国际氮化物半导体研讨会（IWN）是著名的两年一度的学术会议，拥有 24 年的悠久历史。 IWN 专注于 III 族氮化物半导体的前沿研究，是一个全球平台，汇聚了来自世界各地的近 1,000 名专家、研究人员、教师和学生。 2024 年，IWN 将在夏威夷檀香山举行（11 月 3 日至 8 日），有望成为该领域的一个重要里程碑。本次会议将汇集来自学术界、工业界和政府的近 1,000 名与会者，分享他们最近的研究成果他们各自的III族氮化物研究成果。所有这些参与者来自世界各地，讨论该领域的最新进展，同时通过向社区介绍学生和新科学家来丰富社区。 非技术：2024 年氮化物半导体国际研讨会 (IWN) 对美国和印度具有巨大意义全球半导体界。它是创新、协作和包容性的灯塔。IWN 会议与 NSF 为微电子和半导体工程研究提供资助机会的努力是一致的，特别是在宽带隙和超宽带隙半导体器件和电路领域。该资金将用于部分支付学生注册费用，并将为初级教师或学生提供 5 项奖学金，以完全支付他们在符合 EPSCoR 资格的司法管辖区的注册费用。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力价值进行评估，被认为值得支持以及更广泛的影响审查标准。