GOALI: Manufacturing Large, Diamond Single Crystals via High-Pressure, High-Temperature Growth
目标:通过高压、高温生长制造大型金刚石单晶
基本信息
- 批准号:2308877
- 负责人:
- 金额:$ 44.28万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2023
- 资助国家:美国
- 起止时间:2023-07-01 至 2026-06-30
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
This Grant Opportunities for Academic Liaison with Industry (GOALI) award supports research that contributes new knowledge related to diamond single crystal manufacturing, promoting science and advancing national prosperity, health, and security. Diamond single crystals have long been prized as gemstones but have also shown great promise for new technical applications because of their unique properties. While natural diamonds are formed from carbon in the earth’s crust at depths greater than 100 miles, these conditions can be mimicked in the laboratory allowing synthetic diamond crystals of the highest quality to be manufactured using the High-Pressure, High-Temperature growth process. This grant supports fundamental research to improve this process so that single-crystal diamonds can be manufactured in larger sizes, at ultra-high quality, and for less cost, thus enabling application in optical elements for high-power X-ray systems, as well as in devices for radiation detectors in nuclear reactors and medical applications, power electronics, and quantum computing. Results from this research will favorably impact economic competitiveness, and national security. This research involves several disciplines including advanced manufacturing, computational modeling, crystal growth, and materials science. The multi-disciplinary approach helps broaden participation and positively impacts engineering education.Manufacturing processes employed to grow large, single crystals must achieve atomic-level structural perfection while simultaneously maintaining yields that are high enough to meet cost objectives. This project addresses the production of single-crystal diamond via crystal growth in a High-Pressure, High-Temperature system. This system has the capability to grow diamonds of the highest crystalline quality. However, extreme pressure (5 GPa) and temperature (1,500 K) make direct, in situ diagnostics of growth impossible and modeling a vital tool for process improvement. This project develops and applies novel computational models based on thermodynamics, kinetics, and transport to better understand the fundamental mechanisms responsible for single-crystal diamond growth in the High-Pressure, High-Temperature system. These models are validated via growth experiments conducted by GOALI partner, Euclid Beamlabs, LLC, and applied to improve manufacturing outcomes, such as large crystal size and increased growth rate. An important goal is to avoid process conditions leading to inclusions, which are micron-sized defects containing metallic solvent trapped during growth. Multi-scale models describe steps of atomic height that move across the facets of the growing diamond and predict when an equidistant train of steps destabilizes to form bunches, triggering inclusion formation. Understanding the onset of bunching thus allows innovative growth strategies, such as time-dependent tilting of the system, to be assessed by modeling and tested using experiments.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
这项“学术与工业联络资助机会”(GOALI) 奖项支持贡献与钻石单晶制造相关的新知识、促进科学和促进国家繁荣、健康和安全的研究。 钻石单晶长期以来一直被视为宝石,但也表明了这一点。由于其独特的性质,天然钻石是由地壳中超过 100 英里的碳形成的,因此可以在实验室中模拟这些条件,从而获得最高质量的合成钻石晶体。使用高压、高温生长工艺进行制造 这笔赠款支持改进该工艺的基础研究,以便可以以更低的成本制造更大尺寸、超高品质的单晶钻石。这项研究的结果将对高功率 X 射线系统的光学元件以及核反应堆和医疗应用中的辐射探测器、电力电子和量子计算的应用产生有利的影响。研究涉及几个多学科方法有助于扩大参与并对工程教育产生积极影响。用于生长大型单晶的制造工艺必须实现原子级结构的完美,同时保持产量。该项目通过在高压、高温系统中生长晶体来生产单晶金刚石,但该系统能够生长最高晶体质量的金刚石。 (5 GPa) 和温度 (1,500 K) 使得直接原位生长诊断变得不可能,建模成为过程改进的重要工具。该项目开发并应用基于热力学、动力学和传输的新型计算模型,以更好地理解基本机制。这些模型通过 GOALI 合作伙伴 Euclid Beamlabs, LLC 进行的生长实验进行验证,并应用于改进制造。一个重要的目标是避免导致夹杂物的工艺条件,夹杂物是在生长过程中含有金属溶剂的微米级缺陷。生长的钻石的刻面并预测等距的一系列台阶何时不稳定形成束,从而触发夹杂物的形成,从而可以通过建模和测试来评估创新的生长策略,例如系统的时间依赖性倾斜。使用该奖项反映了 NSF 的法定使命,并通过使用基金会的智力价值和更广泛的影响审查标准进行评估,被认为值得支持。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Jeffrey Derby其他文献
Jeffrey Derby的其他文献
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{{ truncateString('Jeffrey Derby', 18)}}的其他基金
Workshop: Ninth International Workshop on Modeling in Crystal Growth (IWMCG-9); Kailua-Kona, Hawaii; 21-24 October 2018
研讨会:第九届晶体生长建模国际研讨会(IWMCG-9);
- 批准号:
1853512 - 财政年份:2018
- 资助金额:
$ 44.28万 - 项目类别:
Standard Grant
GOALI: Toward Improving Quality and Yield of Large-Area, Single-Crystal Sapphire Wafers via Fundamental Understanding of Bubble Engulfment During Growth
目标:通过对生长过程中气泡吞噬的基本了解,提高大面积单晶蓝宝石晶圆的质量和产量
- 批准号:
1760689 - 财政年份:2018
- 资助金额:
$ 44.28万 - 项目类别:
Standard Grant
Toward viable horizontal ribbon growth of solar silicon: Understanding and ameliorating process instabilities
实现太阳能硅的可行水平带状生长:理解和改善工艺不稳定性
- 批准号:
1336164 - 财政年份:2013
- 资助金额:
$ 44.28万 - 项目类别:
Standard Grant
Collaborative Research: ARI-MA Development of Improved CMT and CZT Nuclear Detectors for Homeland Security Applications
合作研究:ARI-MA 开发用于国土安全应用的改进型 CMT 和 CZT 核探测器
- 批准号:
1140001 - 财政年份:2011
- 资助金额:
$ 44.28万 - 项目类别:
Standard Grant
Materials World Network: Detached Bridgman Growth of Semiconductor Crystals
材料世界网络:半导体晶体的分离布里奇曼生长
- 批准号:
1007885 - 财政年份:2010
- 资助金额:
$ 44.28万 - 项目类别:
Continuing Grant
Sixth International Workshop on Modeling in Crystal Growth (IWMCG-6) to be held in Lake Geneva, WI, August 9-13, 2009
第六届晶体生长建模国际研讨会 (IWMCG-6) 将于 2009 年 8 月 9 日至 13 日在威斯康星州日内瓦湖举行
- 批准号:
0939445 - 财政年份:2009
- 资助金额:
$ 44.28万 - 项目类别:
Standard Grant
GOALI: Thermal-Capillary Analysis of the Horizontal Ribbon Growth of Solar Silicon via Finite-Element Process Models
GOALI:通过有限元过程模型对太阳能硅的水平带生长进行热毛细管分析
- 批准号:
0755030 - 财政年份:2008
- 资助金额:
$ 44.28万 - 项目类别:
Standard Grant
Growth of crystalline ZnO nanowires from solution: From theory to application
从溶液中生长结晶氧化锌纳米线:从理论到应用
- 批准号:
0729924 - 财政年份:2007
- 资助金额:
$ 44.28万 - 项目类别:
Standard Grant
Employing Convective Assembly for Micro-/Nano-Fabrication of Colloidal Crystals
采用对流组装进行胶体晶体的微/纳米制造
- 批准号:
0726958 - 财政年份:2007
- 资助金额:
$ 44.28万 - 项目类别:
Standard Grant
ACT/SGER: Evaluation of a Novel Approach for Improved Growth of CdZnTe
ACT/SGER:改进 CdZnTe 生长的新方法的评估
- 批准号:
0345183 - 财政年份:2003
- 资助金额:
$ 44.28万 - 项目类别:
Standard Grant
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