Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
第 23 届美国晶体生长和外延会议 (ACCGE-23) 的参与者支持;
基本信息
- 批准号:2333144
- 负责人:
- 金额:$ 0.7万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2023
- 资助国家:美国
- 起止时间:2023-08-01 至 2024-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This grant provides participant support for attendees of the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) to be held in Tucson, Arizona, 13-18 August 2023. The conference focuses on new research and development activities in bulk single crystal and epitaxial thin film growth. Students and faculty present their latest research results on crystal growth and epitaxy through oral and poster sessions. The conference impacts the advanced manufacturing and broader engineering communities. Priority is given to student and young faculty participants who are women or who come from underrepresented minority groups. This approach promotes diverse participation at the conference, in the short term, and in STEM fields, in the long term. This award benefits the nation through the education of a skilled and diverse manufacturing workforce, which is better prepared to provide transformative solutions to the challenges in their chosen fields. The conference plays an important role in supporting and sustaining the important field of crystal growth and epitaxy, which is an important component of semiconductor and microelectronics research. This conference is timely because of renewed interest in the revitalization of microelectronics and semiconductor manufacturing in the US.This participant support is expected to benefit the students' professional, scientific, and technical development. Attendance at the conference gives the students and faculty a broader view of crystal growth and thin film epitaxy, its fundamentals, advanced manufacturing, advanced characterization, and applications. Symposium topics include fundamentals of materials synthesis, crystal structure analysis, crystal growth techniques and methods, high throughput manufacturing, process modeling, monitoring and control, and specialized topics, such as 2D nanomaterials, ceramics, ferroelectrics, and microfluidic processing. The conference is an opportunity for participants to showcase their scientific accomplishments, interact with peers and colleagues in academia, government labs and industry and extend their network within the broad materials processing and advanced manufacturing communities. Attendees will learn about state-of-the-art research in their technical areas via access to several technical and professional development talks by leading domestic and international speakers. Students and young faculty enhance their communication skills through oral and poster presentations and in-depth discussions of their work with peers in their technical areas. This interactive experience significantly broadens student education, increases their enthusiasm for their research topic, acquaints them with expectations for scientific careers, and exposes them to new approaches for innovative research.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
该赠款为2023年8月13日至8日在亚利桑那州图森举行的第23届美国水晶增长和外观增长和外观增长(ACCGE-23)的与会者提供了参与者的支持。该会议侧重于散装单晶和外延薄膜增长的新研究和发展活动。学生和教职员工通过口头和海报会议介绍了有关晶体增长和外观的最新研究结果。会议影响了先进的制造业和更广泛的工程社区。优先考虑妇女或来自代表性不足的少数群体的学生和年轻教师。从长远来看,这种方法可在短期内和STEM领域促进各种参与。通过教育熟练和多样化的制造业劳动力,该奖项使国家受益匪浅,该劳动力可以更好地为他们所选领域的挑战提供变革性的解决方案。该会议在支持和维持晶体生长和外观的重要领域中起着重要作用,这是半导体和微电子研究的重要组成部分。这次会议之所以及时,是因为对美国的微电子和半导体制造的振兴兴趣重新兴趣。预计,该参与者的支持将使学生的专业,科学和技术发展受益。参加会议的出席使学生和教职员工对水晶增长和薄膜外观,基本面,高级制造,高级特征和应用的更广泛视野。专题讨论会主题包括材料合成,晶体结构分析,晶体生长技术和方法的基础,高吞吐量制造,过程建模,监测和控制以及专业主题,例如2D纳米材料,陶瓷,铁电这些和微流体处理。这次会议是参与者的一个机会,可以展示他们的科学成就,与学术界,政府实验室和行业的同龄人互动,并在广泛的材料处理和高级制造社区中扩展其网络。与会者将通过领先的国内外演讲者访问几次技术和专业发展谈判,了解其技术领域的最先进研究。学生和年轻的教师通过口头和海报演讲以及与技术领域的同龄人的工作进行了深入讨论来提高他们的沟通能力。这种互动经验极大地扩大了学生的教育,增加了他们对研究主题的热情,使他们对科学职业的期望相熟悉,并将他们暴露于新的创新研究方法中。该奖项反映了NSF的法定任务,并被认为是值得通过基金会的知识分子和更广泛影响的评估来通过评估来支持的,这是值得的。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Joan Redwing其他文献
Epitaxial Growth of MoS2 on Sapphire (c-Al2O3) by MOCVD
MOCVD 在蓝宝石 (c-Al2O3) 上外延生长 MoS2
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
Myeongok Kim;Nazmul Ahsan;Nicholas Trainor;Chen Chen;Dorota Kowalczyk;Joan Redwing;Yoshitaka Okada - 通讯作者:
Yoshitaka Okada
Approaches to high-efficiency intermediate band photovoltaics
高效中频光伏发电的方法
- DOI:
- 发表时间:
2021 - 期刊:
- 影响因子:0
- 作者:
Myeongok Kim;Nazmul Ahsan;Nicholas Trainor;Chen Chen;Dorota Kowalczyk;Joan Redwing;Yoshitaka Okada;Yoshitaka Okada - 通讯作者:
Yoshitaka Okada
Joan Redwing的其他文献
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{{ truncateString('Joan Redwing', 18)}}的其他基金
MIP: 2D Crystal Consortium (MIP-2DCC)
MIP:2D 晶体联盟 (MIP-2DCC)
- 批准号:
2039351 - 财政年份:2021
- 资助金额:
$ 0.7万 - 项目类别:
Cooperative Agreement
Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
为学生参加第 22 届美国晶体生长和外延会议提供参与支持,虚拟会议,2021 年 8 月 2-4 日
- 批准号:
2138270 - 财政年份:2021
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
EAGER 协作研究:隧道、异质结二维热电子晶体管的基础知识
- 批准号:
2029729 - 财政年份:2020
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
2019年第十七届晶体生长国际暑期学校(ISSCG-17)(科罗拉多州格兰比)
- 批准号:
1917552 - 财政年份:2019
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
Graphene Encapsulated Growth of 2D Materials
石墨烯封装的二维材料生长
- 批准号:
1808900 - 财政年份:2018
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
NSF EFRI-2DARE、DMREF-2D 和 MIP 受资助者会议将于 2017 年 11 月 13 日至 15 日在宾夕法尼亚州州立学院举行
- 批准号:
1748382 - 财政年份:2017
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
MIP: 2D Crystal Consortium (MIP-2DCC)
MIP:2D 晶体联盟 (MIP-2DCC)
- 批准号:
1539916 - 财政年份:2016
- 资助金额:
$ 0.7万 - 项目类别:
Cooperative Agreement
PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
PFI:AIR - TT:高效纹理太阳能电池的一步工艺
- 批准号:
1414236 - 财政年份:2014
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
GOALI: Strained Layer Heterostructures for GaN-on-Si Epitaxy
目标:用于 GaN-on-Si 外延的应变层异质结构
- 批准号:
1410765 - 财政年份:2014
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition
EFRI 2-DARE:通过活化原子层沉积形成的 2D 晶体
- 批准号:
1433378 - 财政年份:2014
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
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