Collaborative Research: FuSe: Heterogeneous Integration of III-Nitride and Boron Arsenide for Enhanced Thermal and Electronic Performance

合作研究：FuSe：III族氮化物和砷化硼的异质集成以增强热和电子性能

• 批准号: 2329110
• 负责人: Bing Lv
• 金额: $ 40万
• 依托单位: University of Texas at Dallas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-10-01 至 2026-09-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2329110&HistoricalAwards=false
• 关键词: Collaborative; Research; FuSe; Heterogeneous; Integration

Non-technical Description:Semiconductor devices are critical components in contemporary information, transportation, and energy technologies. One of the grand challenges faced by the semiconductor industry is the conversion of a large amount of electrical energy consumption by semiconductor devices into heating, which causes local hot spots and degrades the device performance and reliability. Enabled by recent advances in the growth of bulk semiconducting boron arsenide (BAs) crystals that conduct heat much more efficiently than current-generation semiconductor materials, this research project pursues heterogeneous integration of BAs substrates with other semiconductor components to address the challenge in heat management and energy efficiency. A specific goal of this project is to realize functional integration of two types of semiconductors, BAs and gallium nitride (GaN), into a platform that utilizes their complementary properties to enhance performance and energy efficiency of semiconductor devices. Besides impacting semiconductor technologies, the research is integrated with a set of education and workforce development activities, including creating course materials and new courses on semiconductor materials and devices, annual Semiconductor Day with Industry, and Woman in Semiconductors Club, to provide training to students from diverse background and prepare them for the future-generation workforce of the semiconductor industry.Technical Description:This project pursues heterogeneous integration of BAs substrates and III-nitride semiconductors, creating a platform to combine the high thermal conductivity and hole transport of BAs with the excellent electron transport and breakdown properties of the III-nitride semiconductor system. This research project employs electro-thermal codesign to realize functional integration of BAs with GaN devices for complementary radio-frequency (RF) circuits, especially power amplifier where thermal management of local hot spots is a limiting factor for performance and reliability. Several different types of BAs/GaN device designs are designed and fabricated based on fundamental investigations of melt growth and Bridgman growth of semi-insulating BAs substrates, transfer bonding of GaN-based layers on BAs substrates, and epitaxial growth of InGaN thin films on BAs. Theoretical models of coupled heat and charge transport are employed for electro-thermal codesign of the hybrid device structures. The fabricated devices are evaluated with both established RF circuit performance tests and high-spatial resolution thermal imaging. Besides complementary logic integrated with RF III-nitride devices on the same BAs substrate to enable switching and modulation schemes needed in high-performance power and communication systems, the research aims to lay the foundation for integrating BAs into different types of semiconductor device systems to enhance thermal management and energy efficiency.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：半导体设备是当代信息，运输和能源技术中的关键组成部分。半导体行业面临的巨大挑战之一是将半导体设备通过大量电能消耗转换为加热，这会导致当地热点并降低设备性能和可靠性。该研究项目的最新进展比散装半导体硼芳烃（BAS）晶体比电流的半导体材料更有效地进行热量，因此该研究项目追求BAS底物与其他检测试验器组件的异质整合，以解决热管理和能源效率的挑战。该项目的一个具体目标是实现两种类型的半导体BAS和硝酸盐（GAN）的功能整合，以利用其互补特性来提高半导体设备的性能和能源效率。除影响半导体技术外，该研究还与一系列教育和劳动力发展活动相结合，包括创建课程材料和半导体材料和设备上的新课程，与行业的年度半导体日，以及在半导体俱乐部中的女性，为来自多元化背景的学生提供培训，并为他们提供了对未来的项目的培训：对他们的未来工作。 BAS底物和III-二硝酸半导体，创建了一个平台，将BAS的高导热性和孔传输与III二硝酸盐半导体系统的出色电子传输和击穿性质相结合。该研究项目采用电热代码来实现BAS与GAN设备的功能整合，以互补射频（RF）电路，尤其是功率放大器，其中当地热点的热管理是性能和可靠性的限制因素。基于对半绝量BAS底物的熔体生长和Bridgman生长的基本研究，设计和制造了几种不同类型的BAS/GAN设备设计，基于BAS底物对基于GAN的层的键合以及Ingan薄膜在BAS上的外观增长的基本研究。耦合热和电荷传输的理论模型用于混合设备结构的电热代码。通过已建立的RF电路性能测试和高空间分辨率热成像评估制造的设备。除了与同一BAS基板上的RF III二氮化设备集成的互补逻辑外，在高性能能力和通信系统中所需的转换和调节方案外，该研究旨在奠定基础，旨在将BAS整合到不同类型的Semiconductor设备系统中，以增强热量管理和能源奖，以反映NSF的Interne Infternit Internition nsf的宣传，并以此为基础，并且一直以来的宣传仪式，并以此为基础。和更广泛的影响审查标准。