Collaborative Research: FuSe: GeSnO2 Alloys for Next-Generation Semiconductor Devices

合作研究：FuSe：用于下一代半导体器件的 GeSnO2 合金

• 批准号: 2328702
• 负责人: Steven Koester
• 金额: $ 73.42万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-10-01 至 2026-09-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2328702&HistoricalAwards=false
• 关键词: Collaborative; Research; FuSe; GeSnO2; Alloys

Non-technical Description:This project brings together a team of scientists in physics, chemistry, materials science, and electrical engineering at the University of Michigan and the University of Minnesota to co-design electronic materials and devices based on oxides of the elements tin and germanium. It answers fundamental scientific questions to understand how these materials can be grown with sufficiently high quality and how their electrical conductivity can be controlled by modifications to their composition. The project has the potential to transform the development of fast, compact, and energy-efficient electronic devices manufactured with non-toxic elements, to catalyze applications such as electric vehicles and smart electricity grids, and to stimulate economic growth in the US. The principal investigators promote diversity and expand graduate education opportunities through initiatives such as developing curricula, mentoring undergraduate and PhD students, hosting summer schools, and collaborating with programs that support undergraduate research.Technical Description:This project supports research activities on the co-design of ultra-wide-band-gap semiconductor materials and electronic devices based on alloys of germanium dioxide with tin dioxide in the rutile structure. The research activities combine theory, thin-film growth, structural and electrical characterization, and device fabrication, and focus on (1) the development of high-quality thin films, (2) the demonstration of n-type and p-type doping, (3) the development of high-quality electrical contacts, (4) the understanding of low- and high- field electrical transport, and (5) the fabrication of prototype power devices. The research aims to advance the science and engineering of oxide semiconductor materials in order to co-design prototype devices and accelerate the manufacturing of energy-efficient electronics.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：该项目将密歇根大学和明尼苏达大学的物理，化学，材料科学和电气工程科学家组成，以基于元素罐装和锗的氧化物共同设计电子材料和设备。它回答了基本的科学问题，以了解如何以足够高质量的高质量生长这些材料，以及如何通过对其组成的修改来控制它们的电导率。该项目有可能改变具有无毒元素的快速，紧凑和节能电子设备的开发，以催化电动汽车和智能电网等应用，并刺激美国的经济增长。首席研究人员通过开发课程，指导本科生和博士学位学生，举办暑期学校以及与支持本科研究的计划，促进多样性并扩大研究生教育机会 结构。研究活动结合了理论，薄膜的生长，结构和电气表征以及设备制造，并专注于（1）高质量薄膜的发展，（2）N型和P型掺杂的证明，（3）高质量电气接触的发展，（4）（4）低 - 和高电场电气运输的理解（4）FAIRETICET（5）FAIFE和（5）。该研究旨在推进氧化物半导体材料的科学和工程，以共同设计原型设备并加速节能电子产品的制造。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的知识分子和更广泛影响的评估来通过评估来获得支持的。