US-Ireland R&D Partnership: Ga2O3: Understanding Growth, Interfaces and Defects to enable next generation Electronics (GUIDE)

美国-爱尔兰 R

• 批准号: 2154535
• 负责人: Chadwin Young
• 金额: $ 43.96万
• 依托单位: University of Texas at Dallas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-08-15 至 2025-07-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2154535&HistoricalAwards=false
• 关键词: US; Ireland; R& Partnership; Ga2O3

Non-Technical AbstractThis NSF project aims to continue over a decade of partnerships with Northern Ireland and the Republic of Ireland is to investigate a relatively new semiconductor known as gallium oxide to transform power electronics for systems and applications that go far beyond current state of the art for these power transistors that can also function in extreme environments. This will be determined by evaluating how this semiconductor can be introduced into mainstream chip manufacturing while achieving gallium oxide’s expected performance. The intellectual merits of this project include evaluation of gallium oxide combined with insultating or magnetic materials to attempt to realize the promise if this relatively new semiconducting material for applications in power transistors and extreme environment memory. In addition, the proposed research will explore what is happening when these materials join together. The interface that forms between the materials is critical to achieving the theoretically predicted device performance since this interface is assumed to be ideal. Therefore, non-ideal interfaces can have adverse effects that impede eventual chip performance. Therefore, this tri-lateral research team will fundamentally investigate these materials and interfaces to determine performance, and should the expected performance not be met, provide an explanation for why devices are underperforming. Then, the team can either solve what is causing the performance degradation or provide predictive models that can project when the device degradation becomes sufficient enough to render the device as having failed. The implications of these findings from the project will enable a broad range of technological advances in clean energy, wireless communications, optoelectronics, power grids, and defense by enabling technologies inaccessible to current, mainstream power transistors. Furthermore, advancing the understanding how to properly bring these proposed materials together will help enable execution of a bipartisan plan through pending legislation to reenergize computer chip manufacturing here in the United States to ensure a global competitive advantage and further enhance national security. In addition, student engagement between the 3 locations is planned for scientific and cultural exchanges along with underrepresented groups, women, and first generation student engagement on pursuing graduate education and research careers.Technical AbstractThis proposed GUIDE program will continue a productive NSF US-Ireland partnership that has lasted more than a decade between UT-Dallas (UTD), the Tyndall National Institute (TNI), and Queen’s Univ. Belfast (QUB). The partnership will provide fundamental understanding in the deposition and characterization of dielectric and ferroelectric materials on gallium oxide (Ga2O3) for use in power transistors and memory applications. The goal of this proposal is the methodical exploration and fundamental understanding of interface and material properties that influence the behavior of Ga2O3-based electron devices. We will incorporate modeling and simulation to steer experimentation and to provide understanding and correlation between material and electronic properties. Incorporating high-k oxides increases the breakdown field strength of the transistor and improves channel region modulation in vertical transistors. In addition, having a ferroelectric material on Ga2O3 will enable extreme environment, non-volatile memory that can withstand high temperatures (wide bandgap) and radiation exposure (memory switching based on ferroelectricity rather dielectric charges). Furthermore, exploring low-temperature deposited Ga2O3 with high-k oxides will detail critical information for three-dimensional monolithic integration that may require backend-of-line, low temperature fabrication. Fundamental device understanding of the bulk dielectric and associated interface properties is critical to realizing power transistors with faster switching frequencies, better efficiency, and high temperature and electric field operation than current power transistors. Providing an approach to effectively evaluate electrically active defects within the device architecture will enable methodology development and forecast performance and reliability for those working in this field. Furthermore, advancing the understanding how to properly bring these proposed materials together will help enable execution of a bipartisan plan through pending legislation to reenergize computer chip manufacturing here in the United States to ensure a global competitive advantage and further enhance national security. In addition, student engagement between the 3 locations is planned for scientific and cultural exchanges along with underrepresented groups, women, and first-generation student engagement on pursuing graduate education and research careers.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术摘要该 NSF 项目旨在继续与北爱尔兰和爱尔兰共和国十多年的合作伙伴关系，研究一种称为氧化镓的新型半导体，以改造电力电子系统和应用，远远超出当前的技术水平这些功率晶体管也可以在极端环境下工作，这将通过评估如何将这种半导体引入主流芯片制造来确定，同时实现氧化镓的预期性能，包括对氧化镓的评估。或磁性材料，试图实现这种相对较新的半导体材料在功率晶体管和极端环境存储器中的应用。此外，拟议的研究将探索当这些材料结合在一起时会发生什么。对于实现理论上预测的器件性能至关重要，因为该接口被认为是理想的，因此，非理想的接口可能会产生阻碍最终芯片性能研究的不利影响，因此，这个三边研究团队将从根本上将这些材料和接口结合起来。确定性能，并且应该预期然后，团队要么解决导致性能下降的原因，要么提供预测模型，以预测设备何时下降足以使设备出现故障。该项目的这些发现将通过实现当前主流功率晶体管无法获得的技术，促进清洁能源、无线通信、光电子、电网和国防领域的广泛技术进步。此外，还可以加深对如何正确使用这些拟议材料的理解。齐心协力将有助于执行通过悬而未决的立法，重振美国计算机芯片制造业的两党计划，以确保全球竞争优势并进一步增强国家安全。此外，计划三个地点之间的学生与代表性不足的群体进行科学和文化交流，女性和第一代学生参与研究生教育和研究职业。技术摘要拟议的 GUIDE 计划将继续美国国家科学基金会与爱尔兰之间富有成效的伙伴关系，这种伙伴关系已在 UT-Dallas (UTD) 之间持续了十多年，廷德尔国家研究所 (TNI) 和贝尔法斯特女王大学 (QUB) 的合作将为用于功率晶体管和存储器应用的氧化镓 (Ga2O3) 上的介电和铁电材料的沉积和表征提供基础知识。该提案是对影响 Ga2O3 电子器件行为的界面和材料特性的系统探索和基本理解，我们将结合建模和模拟来指导实验，并提供材料和材料之间的理解和关联。结合高 k 氧化物可提高晶体管的击穿场强并改善垂直晶体管的沟道区域调制。此外，在 Ga2O3 上使用铁电材料将实现能够承受极端环境的非易失性存储器。带隙）和辐射暴露（基于铁电性而不是电介质电荷的存储器切换）此外，探索具有高 k 氧化物的低温沉积 Ga2O3 将详细说明关键信息。三维单片集成可能需要后端、低温制造，对体电介质和相关接口特性的基本器件理解对于实现具有更快开关频率、更高效率以及高温和电场操作的功率晶体管至关重要。提供一种有效地解决器件架构中的电活性缺陷的方法将使该领域的工作人员能够开发方法并预测性能和可靠性。此外，评估加深对如何正确地将这些提议的材料结合在一起的理解将有助于实现。执行两党计划通过悬而未决的立法，重振美国的计算机芯片制造业，以确保全球竞争优势并进一步增强国家安全。此外，计划将三个地点之间的学生与代表性不足的群体、妇女和第一人进行科学和文化交流。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。