US-Ireland R&D Partnership: Ga2O3: Understanding Growth, Interfaces and Defects to enable next generation Electronics (GUIDE)

美国-爱尔兰 R

• 批准号: 2154535
• 负责人: Chadwin Young
• 金额: $ 43.96万
• 依托单位: University of Texas at Dallas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-08-15 至 2025-07-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2154535&HistoricalAwards=false
• 关键词: US; Ireland; R& Partnership; Ga2O3

Non-Technical AbstractThis NSF project aims to continue over a decade of partnerships with Northern Ireland and the Republic of Ireland is to investigate a relatively new semiconductor known as gallium oxide to transform power electronics for systems and applications that go far beyond current state of the art for these power transistors that can also function in extreme environments. This will be determined by evaluating how this semiconductor can be introduced into mainstream chip manufacturing while achieving gallium oxide’s expected performance. The intellectual merits of this project include evaluation of gallium oxide combined with insultating or magnetic materials to attempt to realize the promise if this relatively new semiconducting material for applications in power transistors and extreme environment memory. In addition, the proposed research will explore what is happening when these materials join together. The interface that forms between the materials is critical to achieving the theoretically predicted device performance since this interface is assumed to be ideal. Therefore, non-ideal interfaces can have adverse effects that impede eventual chip performance. Therefore, this tri-lateral research team will fundamentally investigate these materials and interfaces to determine performance, and should the expected performance not be met, provide an explanation for why devices are underperforming. Then, the team can either solve what is causing the performance degradation or provide predictive models that can project when the device degradation becomes sufficient enough to render the device as having failed. The implications of these findings from the project will enable a broad range of technological advances in clean energy, wireless communications, optoelectronics, power grids, and defense by enabling technologies inaccessible to current, mainstream power transistors. Furthermore, advancing the understanding how to properly bring these proposed materials together will help enable execution of a bipartisan plan through pending legislation to reenergize computer chip manufacturing here in the United States to ensure a global competitive advantage and further enhance national security. In addition, student engagement between the 3 locations is planned for scientific and cultural exchanges along with underrepresented groups, women, and first generation student engagement on pursuing graduate education and research careers.Technical AbstractThis proposed GUIDE program will continue a productive NSF US-Ireland partnership that has lasted more than a decade between UT-Dallas (UTD), the Tyndall National Institute (TNI), and Queen’s Univ. Belfast (QUB). The partnership will provide fundamental understanding in the deposition and characterization of dielectric and ferroelectric materials on gallium oxide (Ga2O3) for use in power transistors and memory applications. The goal of this proposal is the methodical exploration and fundamental understanding of interface and material properties that influence the behavior of Ga2O3-based electron devices. We will incorporate modeling and simulation to steer experimentation and to provide understanding and correlation between material and electronic properties. Incorporating high-k oxides increases the breakdown field strength of the transistor and improves channel region modulation in vertical transistors. In addition, having a ferroelectric material on Ga2O3 will enable extreme environment, non-volatile memory that can withstand high temperatures (wide bandgap) and radiation exposure (memory switching based on ferroelectricity rather dielectric charges). Furthermore, exploring low-temperature deposited Ga2O3 with high-k oxides will detail critical information for three-dimensional monolithic integration that may require backend-of-line, low temperature fabrication. Fundamental device understanding of the bulk dielectric and associated interface properties is critical to realizing power transistors with faster switching frequencies, better efficiency, and high temperature and electric field operation than current power transistors. Providing an approach to effectively evaluate electrically active defects within the device architecture will enable methodology development and forecast performance and reliability for those working in this field. Furthermore, advancing the understanding how to properly bring these proposed materials together will help enable execution of a bipartisan plan through pending legislation to reenergize computer chip manufacturing here in the United States to ensure a global competitive advantage and further enhance national security. In addition, student engagement between the 3 locations is planned for scientific and cultural exchanges along with underrepresented groups, women, and first-generation student engagement on pursuing graduate education and research careers.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术抽象的NSF项目旨在继续与北爱尔兰和爱尔兰共和国建立十年的合作伙伴关系，以调查一种称为氧化甲壳虫的相对较新的半导体，以在这些电力变压器的当前状态中为系统状态和应用程序提供电力​​电子设备，从而在极端环境中发挥作用。这将通过评估如何将该半导体引入主流芯片制造中，同时实现氧化加加的预期性能。该项目的智力优点包括评估氧化韧带与侮辱性或磁性材料相结合，以实现这一承诺，如果这种相对新的半导体材料用于电源晶体管中的应用和极端环境记忆。此外，拟议的研究将探讨这些材料融合在一起时的情况。材料之间形成的界面对于实现理论预测的设备性能至关重要，因为该界面被认为是理想的。因此，非理想界面可能会产生影响最终芯片性能的不利影响。因此，这个三边研究团队将从根本上研究这些材料和界面，以确定性能，并且如果无法达到预期的性能，则可以解释设备表现不佳的原因。然后，团队可以解决导致性能下降的原因，也可以提供预测模型，当设备定义足够足够以使设备失败时，可以预测。这些项目的含义将使清洁能源，无线通信，光电子，电网和防御的技术进步范围广泛，通过使当前主流电源晶体管无法访问的技术无法访问。此外，促进理解如何正确将这些提议的材料融合在一起的理解将有助于通过悬而未决的立法来执行两党计划，以将美国在美国这里的计算机芯片制造重新激发，以确保全球竞争优势并进一步增强国家安全。此外，计划在从事研究生教育和研究职业方面的三个位置之间的学生参与以及代表性不足的群体，妇女和第一代学生参与。技术摘要指南计划将继续建立一个富有成效的NSF US-IRLEANT伙伴关系，该计划持续了超过十年来，UT-DALLAS（UT-DALLAS（UT-DALLAS）持续了超过一个国际统计局（UT-Dallas）（UTNI INTIM）（UTN），Tyn and tyn and tyn and tyn and tyn and tyn and tyn and tyn and tyn and tyn and tyn and tyn and tyn and tyn and tyn and tyn。贝尔法斯特（QUB）。该合作伙伴关系将提供在氧化甲壳（GA2O3）中的沉积和表征中的基本理解，以用于电力发射机和内存应用。该提案的目的是对影响基于GA2O3的电子设备行为的界面和材料特性的有条理探索和基本理解。我们将将建模和仿真纳入引导实验，并提供材料和电子特性之间的理解和相关性。掺入高K氧化物会增加晶体管的分解场强度，并改善垂直晶体管中的通道区域调制。此外，在GA2O3上具有铁电材料将实现极端环境，非易失性记忆，可以承受高温（宽带盖）和辐射暴露（基于铁电性而不是顽固的电荷的存储器切换）。此外，用高k氧化物探索低温沉积的GA2O3将详细详细介绍至关重要的信息，以获取三维单层整合的关键信息，这可能需要线路的后端低温制造。对散装饮食和相关界面特性的理解的基本设备对于以更快的开关频率，更好的效率以及高温和电场运行比目前的功率晶体管至关重要。提供一种方法来有效评估设备体系结构中的电活动缺陷，将为在该领域工作的人提供方法论开发，预测性能和可靠性。此外，促进理解如何正确将这些提议的材料融合在一起的理解将有助于通过悬而未决的立法来执行两党计划，以将美国在美国这里的计算机芯片制造重新激发，以确保全球竞争优势并进一步增强国家安全。此外，计划在3个地点之间进行学生参与，以进行科学和文化交流以及代表性不足的群体，妇女和第一代学生参与，以追求研究生教育和研究职业。这项奖项反映了NSF的法定任务，并被认为是通过基金会的知识分子功能和广泛影响的评估来评估CRETERIA的评估。