STTR Phase II: Integrated Gallium Nitride (GaN) Field Effect Transistor (FET)-Based High Density On Board Electric Vehichle (EV) Charger

STTR 第二阶段：基于集成氮化镓 (GaN) 场效应晶体管 (FET) 的高密度车载电动汽车 (EV) 充电器

• 批准号: 2052316
• 负责人: Amitava Das
• 金额: $ 97.81万
• 依托单位: TAGORE TECHNOLOGY, INC.
• 依托单位国家: 美国
• 项目类别: Cooperative Agreement
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-03-01 至 2025-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2052316&HistoricalAwards=false
• 关键词: STTR; Phase; II; Integrated; Gallium

The broader impact/commercial potential of this Small Business Technology Transfer Phase II project is to improve energy efficiency of power electronics systems through the use of Gallium Nitride (GaN). Power electronics are ubiquitous in today’s society – used inside the electric vehicles, laptops, and data centers. A high-power GaN half-bridge (HPGHB) integrated circuit, a generic building block of the power-electronic systems, will be developed and manufactured. This project seels to demonstrate use of HPGHB in an on-board charger (OBC) applications. The use of HPGHB may lead to smaller and more efficient OBCs. On the educational front, this project will help train graduate students at the University to use GaN for power electronics which is a high demand employment area. Companies will be able to recruit and benefit from this training of graduate students. This Small Business Technology Transfer (STTR) Phase II project seeks to develop a robust, high current high-power GaN half-bridge (HPGHB) and a reference design for an on-board charger (OBC). High-current integrated GaN half bridge is challenging due to the need for short-circuit protection and thermal management. HPGHB is planned for areas where long-term reliability is important, such as in automotive/electric vehicle (EV) applications. This STTR project seeks to complete the design of HPGHB increasing its reliability in demanding applications including EVs. Development of an OBC with high efficiency and high-power density may accelerate the adoption of EV. Key challenges for this project are: a) providing protection against short circuiting that causes catastrophic damage; b) demonstrating high efficiency to reduce cooling requirements and reduce size and weight; c) designing novel converter control techniques to enable usage of relatively low cost GaN-on-silicon technology; d) establishing good long-term reliability for the automotive/EV market via dynamic high-temperature-operating-life (HTOL) testing; and e) reducing overall system costs.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这项小型企业技术转移阶段II阶段项目的更广泛的影响/商业潜力是通过使用氮化碳（GAN）来提高电力电子系统的能源效率。电力电子在当今社会中无处不在 - 在电动汽车，笔记本电脑和数据中心内使用。将开发和制造一个高功率GAN半桥（HPGHB）集成电路，该电路是功率电子系统的通用构建块。该项目认为在板载充电器（OBC）应用程序中使用HPGHB。 HPGHB的使用可能会导致更小，更有效的OBC。在教育方面，该项目将帮助培训大学的研究生将GAN用于电力电子产品，这是高需求就业领域。公司将能够从研究研究生的培训中招募和受益。这个小型企业技术转移（STTR）II阶段项目旨在开发出强大的高电流高功率GAN半桥（HPGHB）和板载充电器（OBC）的参考设计。高电流集成的gan半桥由于需要保护和热管理而受到挑战。 HPGHB计划在长期可靠性很重要的领域，例如在汽车/电动汽车（EV）应用中。该STTR项目旨在完成HPGHB的设计，以提高其在包括电动汽车在内的苛刻应用程序中的可靠性。具有高效率和高功率密度的OBC的开发可能会加速采用EV。该项目的主要挑战是：a）提供防止造成灾难性损害的短路； b）表现出高效率以减少冷却需求并减少尺寸和体重； c）设计新颖的转换器控制技术，以实现相对较低的成本gan-on-silicon技术； d）通过动态高温运行（HTOL）测试，为汽车/EV市场建立良好的长期可靠性； e）降低整体系统成本。该奖项反映了NSF的法定任务，并通过使用基金会的智力优点和更广泛的影响评估标准评估被认为是珍贵的支持。