STTR Phase I: Integrated GaN FET based high density on board EV charger

STTR 第一阶段：基于集成 GaN FET 的高密度车载电动汽车充电器

• 批准号: 1914247
• 负责人: Amitava Das
• 金额: $ 22.49万
• 依托单位: TAGORE TECHNOLOGY, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-07-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1914247&HistoricalAwards=false
• 关键词: STTR; Phase; Integrated; GaN; FET

The broader impact/commercial potential of this project is the development of a high-power GaN half-bridge (HPGHB) module which is a generic building block for most power-electronic systems. Hence, HPGHB can be used in most high current converter applications. This project will start with high electric-vehicle (EV) application in collaboration with a well-known automotive parts maker. EVs need to be widely adopted in advanced cities and in the rural/underdeveloped world. High-power off-board charger may not always be available; hence high-power on-board charger (OBC), which is the topic of this STTR, is a critical enabler for wider adoption of EV leading to reduced carbon emission. On the educational front, this STTR will help train graduate students at the University to use GaN for power electronics which is a high demand area. Companies will be able to recruit and benefit from training of graduate students. Finally, regarding knowledge dissemination, technology developed under this proposal will be showcased in an exhibition booth at IEEE conferences like APEC and ECCE.This Small Business Technology Transfer (STTR) Phase I project aims to develop a robust and high-current HPGHB and a reference design for a fast-OBC by incorporating HPGHB. High-current integrated GaN HB is extraordinarily challenging from the point of high dV/dT control, short-circuit protection and thermal management. HPGHB is planned for areas where long-term reliability is important, such as in automotive/EV applications. This STTR plans to research design of HPGHB with various knobs to increase its reliability in demanding applications including EVs. Development of a fast-OBC with high efficiency and high-power density will accelerate the adoption of EVs. Planned OBC plans to use innovative multi-level topologies to enable use of low-cost 650V GaN-HEMT technology. Key challenges for this STTR project are a) protection against very-high dV/dt (of at least 150V/nS); b) protection against short circuit to prevent catastrophic damage; c) high efficiency to reduce cooling requirement and reduce size and weight; d) multilevel converter to enable usage of relatively-lower cost GaN-on-Si technology; e) good long-term reliability for automotive/EV market is addressed via dynamic high-temperature-operating-life (HTOL) test; and f) reduced overall system cost by minimizing the cost related to hot probing of the wafer which is the current practice.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该项目的更广泛的影响/商业潜力是开发高功率GAN半桥（HPGHB）模块，该模块是大多数功率电子系统的通用构建块。因此，HPGHB可用于大多数高电流转换器应用程序。该项目将与著名的汽车零件制造商合作从高电动车（EV）应用程序开始。电动汽车需要在高级城市和农村/欠发达世界中广泛采用。高功率外板充电器可能并不总是可用；因此，这是该STTR的主题，这是更广泛采用EV导致碳排放量减少的关键推动力，这是该STTR的主题的高功率上方充电器（OBC）。在教育方面，此STTR将帮助大学的研究生使用GAN用于高需求领域的电力电子产品。公司将能够从研究生的培训中招募和受益。最后，关于知识传播，根据本提案开发的技术将在APEC和ECCE等IEEE会议的展位上展示。本小型企业技术转移（STTR）I阶段项目旨在通过合并HPGHB来开发强大且高的HPGHB和快速OBC的参考设计。从高DV/DT控制，短路保护和热管理的角度来看，高电流集成GAN HB具有极具挑战性的挑战。 HPGHB计划在长期可靠性很重要的领域（例如汽车/电动汽车应用中）。该STTR计划使用各种旋钮研究HPGHB的设计，以提高其在包括电动汽车在内的苛刻应用中的可靠性。具有高效率和高功率密度的快速OBC的开发将加速采用电动汽车。计划的OBC计划使用创新的多层拓扑来实现低成本650V GAN-HEMT技术。该STTR项目的主要挑战是a）防止最高的DV/DT（至少为150V/ns）； b）防止短路以防止灾难性损害； c）高效率以减少冷却需求并减少尺寸和体重； d）多级转换器以实现相对低成本的gan-on-si技术； e）通过动态高温运行生活（HTOL）测试来解决汽车/EV市场的良好长期可靠性； f）通过最大程度地减少与晶圆的热探测有关的成本，从而降低了整体系统成本。该奖项反映了NSF的法定任务，并且使用基金会的知识分子优点和更广泛的审查标准，被认为值得通过评估来获得支持。