Collaborative Research: Chalcogenide Perovskite Light Emitting Diodes to Fill the Green Gap

合作研究：硫属化物钙钛矿发光二极管填补绿色空白

• 批准号: 2042085
• 负责人: Hao Zeng
• 金额: $ 37.88万
• 依托单位: SUNY at Buffalo
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-05-01 至 2025-04-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2042085&HistoricalAwards=false
• 关键词: Collaborative; Research; Chalcogenide; Perovskite; Light

Solid-state lighting plays a central role in substantially reducing the amount of energy consumption. The efficiency of current LEDs drastically decreases from ∼80% in the blue-light regions to ∼15% in the green region. This lack of a suitable semiconductor green light source is known as the “green gap” problem. This research aims to address this problem by developing green LEDs based on an entirely new family of semiconductor materials called chalcogenide perovskite. The proposed work is a critical step towards opening a new frontier in semiconductor device research based on chalcogenide perovskites, with far reaching impacts on applications such as sensing, energy harvesting, information processing, and storage. The use of earth-abundant elements in these materials can reduce our nation’s reliance on rare-earth materials. Through collaboration with local industry, the proposed work will also develop samples and instrumentation for advanced laboratory courses, which will not only impact STEM education in the US and worldwide, but also the local economy in Western New York. The research activities involving machine learning, first-principles computation, material synthesis, device fabrication, and characterization, will offer important interdisciplinary training to a diversified student body through targeted recruiting from underrepresented groups.This proposal aims to demonstrate the first chalcogenide perovskite-based light emitting diodes, with the long-term goal of bridging the green gap in LED technology. This will involve an iterative process in which theoretical prediction will guide material synthesis and atomic level structural, optical, and carrier transport characterization will inform theoretical models as well as device design and fabrication. The idea of this work was conceived based on the principal investigators' recent prediction and realization of chalcogenide perovskite materials with tunable band gap and promising semiconducting properties. The specific project objectives are to: i) Develop a low temperature chalcogenide perovskite thin-film processing technique compatible with device fabrication and growing high quality SrHfS3 and SrZrS3 thin films with strong green and amber light emission. ii) Control device properties through concerted first-principles computation and experiments of atomic scale structural, optical, and carrier transport characteristic. iii) Design, fabricate, and evaluate green and amber LEDs from n- and p- type doped SrHfS3 and SrZrS3 thin films. An innovative device fabrication technique incorporating micro-transfer-printing allows for dissimilar materials to form a high-quality p-i-n type LED structure with extremely clean interfaces without being constrained by their growth conditions.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

固态的照明在蓝光区域中的大约80％降低到绿色区域中的大约15％，从而使左右的能源咨询量显着降低了核心。这项研究的目的是通过在半导体材料上开发绿色LED，称为Chalcogenide perovskite。诸如感测，g的含量。在美国和全球，以及纽约西部的当地经济。不足。该提案旨在展示第一个基于辣椒剂的光二极管，其长期目标是弥合LED技术的绿色差距。载体的特征将根据最新的预测和现实来构想理论模型以及设备设计和局限性。胶片技术与设备的纤维和高质量的SRHFS3和SRZRS3薄膜具有强烈的绿色和琥珀色光发射。设计，制造和评估N-ANDED SRHFS3和SRZRS3的绿色和琥珀色LED，薄量设备的制造技术，这些制造技术融合了微型材料的微转移低点，以形成高质量的P-I-I-N型LED结构，而无需其生长条件。反映了NSF的飞行任务，并成为智力优点和更广泛的影响评论标准。

项目成果

A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS3 Films

• DOI: 10.3390/photonics10040366
• 发表时间: 2023-03
• 期刊: Photonics
• 影响因子: 2.4
• 作者: S. Dhole;Xiucheng Wei;Haolei Hui;P. Roy;Zachary J Corey;Yongqiang Wang;W. Nie;Aiping Chen;Hao Zeng;Quanxi Jia

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

低温加工硫系钙钛矿BaZrS3薄膜电子和光电器件

• DOI: 10.1016/j.nanoen.2021.105959
• 发表时间: 2021-03-13
• 期刊: NANO ENERGY
• 影响因子: 17.6
• 作者: Yu, Zhonghai;Wei, Xiucheng;Zeng, Hao
• 通讯作者: Zeng, Hao