Collaborative Research: Chalcogenide Perovskite Light Emitting Diodes to Fill the Green Gap

合作研究：硫属化物钙钛矿发光二极管填补绿色空白

• 批准号: 2042085
• 负责人: Hao Zeng
• 金额: $ 37.88万
• 依托单位: SUNY at Buffalo
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-05-01 至 2025-04-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2042085&HistoricalAwards=false
• 关键词: Collaborative; Research; Chalcogenide; Perovskite; Light

Solid-state lighting plays a central role in substantially reducing the amount of energy consumption. The efficiency of current LEDs drastically decreases from ∼80% in the blue-light regions to ∼15% in the green region. This lack of a suitable semiconductor green light source is known as the “green gap” problem. This research aims to address this problem by developing green LEDs based on an entirely new family of semiconductor materials called chalcogenide perovskite. The proposed work is a critical step towards opening a new frontier in semiconductor device research based on chalcogenide perovskites, with far reaching impacts on applications such as sensing, energy harvesting, information processing, and storage. The use of earth-abundant elements in these materials can reduce our nation’s reliance on rare-earth materials. Through collaboration with local industry, the proposed work will also develop samples and instrumentation for advanced laboratory courses, which will not only impact STEM education in the US and worldwide, but also the local economy in Western New York. The research activities involving machine learning, first-principles computation, material synthesis, device fabrication, and characterization, will offer important interdisciplinary training to a diversified student body through targeted recruiting from underrepresented groups.This proposal aims to demonstrate the first chalcogenide perovskite-based light emitting diodes, with the long-term goal of bridging the green gap in LED technology. This will involve an iterative process in which theoretical prediction will guide material synthesis and atomic level structural, optical, and carrier transport characterization will inform theoretical models as well as device design and fabrication. The idea of this work was conceived based on the principal investigators' recent prediction and realization of chalcogenide perovskite materials with tunable band gap and promising semiconducting properties. The specific project objectives are to: i) Develop a low temperature chalcogenide perovskite thin-film processing technique compatible with device fabrication and growing high quality SrHfS3 and SrZrS3 thin films with strong green and amber light emission. ii) Control device properties through concerted first-principles computation and experiments of atomic scale structural, optical, and carrier transport characteristic. iii) Design, fabricate, and evaluate green and amber LEDs from n- and p- type doped SrHfS3 and SrZrS3 thin films. An innovative device fabrication technique incorporating micro-transfer-printing allows for dissimilar materials to form a high-quality p-i-n type LED structure with extremely clean interfaces without being constrained by their growth conditions.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

固态照明在大大减少能源消耗量方面起着核心作用。电流LED的效率从蓝光区域的〜80％急剧下降到绿色区域的约15％。缺乏合适的半导体绿灯源被称为“绿间隙”问题。这项研究旨在通过基于一个全新的半导体材料系列的绿色LED来解决这个问题，称为Chalcogenide Perovskite。拟议的工作是基于硫化葡萄糖植物钙钛矿的半导体装置研究中新的边界研究的关键一步，对诸如灵敏度，能量收获，信息处理和存储等应用产生了巨大影响。在这些材料中使用土壤丰富的元素可以减少我们国家对稀土材料的缓解。通过与当地工业的合作，拟议的工作还将为高级实验室课程开发样品和仪器，这不仅会影响美国和全球的STEM教育，而且会影响纽约西部的当地经济。涉及机器学习，第一原理计算，材料合成，设备制造和表征的研究活动将通过来自代表性不足的组的目标招募来为多样化的学生团体提供重要的跨学科培训。该提案旨在证明与长期的Green of Green of Gridge Gap indging Gap indging Gap indging Gap indging Gap indging Gap indging Gap indging Gap indging gap g gap gap indging gap indging gap g g gap gap indging gap gap g gap gap indging gap g g gap indging gap，这将涉及一个迭代过程，在该过程中，理论预测将指导材料合成和原子水平的结构，光学和载体传输表征将为理论模型以及设备设计和制造提供信息。这项工作的想法是基于主要研究者的最新预测和实现具有可调带隙和承诺半导体特性的硫酸硫酸硫酸硫酸盐盐材料的预测和实现。特定的项目目标是：i）开发与设备制造兼容的低温甲状腺素钙钛矿薄膜加工技术，并生长高质量的SRHFS3和SRZRS3薄膜，具有较强的绿色和琥珀色光发射。 ii）通过协同的第一原理计算和原子尺度结构，光学和载体传输特性的实验来控制装置的性能。 iii）设计，制造和评估N-和P型掺杂的SRHFS3和SRZRS3薄膜的绿色和琥珀色LED。一种创新的设备制造技术包含了微型转移印刷，可以使材料形成高质量的P-I-N类型LED结构，而不会受到极其干净的接口，而不会受到其生长条件的限制。这项奖项反映了NSF的法定任务，并通过使用该基金会的知识分子优点和广泛的影响来评估NSF的法定任务，并被认为是值得的支持。

项目成果

A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS3 Films

• DOI: 10.3390/photonics10040366
• 发表时间: 2023-03
• 期刊: Photonics
• 影响因子: 2.4
• 作者: S. Dhole;Xiucheng Wei;Haolei Hui;P. Roy;Zachary J Corey;Yongqiang Wang;W. Nie;Aiping Chen;Hao Zeng;Quanxi Jia

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

低温加工硫系钙钛矿BaZrS3薄膜电子和光电器件

• DOI: 10.1016/j.nanoen.2021.105959
• 发表时间: 2021-03-13
• 期刊: NANO ENERGY
• 影响因子: 17.6
• 作者: Yu, Zhonghai;Wei, Xiucheng;Zeng, Hao
• 通讯作者: Zeng, Hao