Collaborative Research: Developing metal-organic molecular beam epitaxy (MOMBE) for chalcogenide semiconductor thin film synthesis

合作研究：开发用于硫族化物半导体薄膜合成的金属有机分子束外延（MOMBE）

• 批准号: 2224949
• 负责人: Luke Davis
• 金额: $ 35.23万
• 依托单位: Tufts University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-09-01 至 2025-08-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2224949&HistoricalAwards=false
• 关键词: Collaborative; Research; Developing; metal; organic

Non-Technical SummaryThere are many known semiconducting materials, and their different properties are what enable different technologies, from cameras, to solar cells, to computers, to high-speed telecommunications, and so on. A new class of semiconductors called chalcogenide perovskites has been recently shown to feature a unique combination of properties that make these materials promising for solar cell applications. To-date, making these materials has required high temperatures and slow rates of crystal growth. Future technology development and commercially viable manufacturing will require a method to make these materials faster and at lower temperatures. This collaborative project between researchers at the Massachusetts Institute of Technology and Tufts University, supported by the Solid State and Materials Chemistry and Ceramic Programs in NSF’s Division of Materials Research, will develop a new chemical approach for making chalcogenide perovskites faster and at lower temperatures than hitherto possible, without sacrificing material quality. Insights from this fundamental science will also inform research and development of other families of semiconductors, with potential impact in computing technologies. This project develops the future workforce by training graduate students in semiconductor chemistry and materials research. This project also expands workforce training opportunities for community college students by supporting an internship program – the Guided Academic Industry Network (GAIN) – that provides students from Boston-area community colleges experiences in materials research and development in academia and industry.Technical SummaryThis collaborative project between researchers at the Massachusetts Institute of Technology and Tufts University, supported by the Solid State and Materials Chemistry and Ceramic Programs in NSF’s Division of Materials Research, focuses on fundamental studies of chalcogenide thin film growth, developing processes to make high-quality, epitaxial thin films of chalcogenide compound semiconductors by metal-organic molecular beam epitaxy (MOMBE). Chalcogenide compound semiconductors containing refractory metals (such as Zr) are of widespread current interest. High-quality thin film processing at moderate temperatures is necessary to propel basic research, and to enable future manufacturing (including heterogeneous integration), but there remain significant scientific hurdles stemming from the combination of very-low vapor pressure metals with very-high vapor pressure chalcogens. Three high-level objectives of this work are: (1) studying the synthesis of Zr-based chalcogenide compound semiconductors using metal-organic (MO) precursors; (2) developing a variation on molecular beam epitaxy (MBE) that allows new access to crystalline films of chalcogenide compound semiconductors; and (3) expanding workforce training opportunities for community college students. The collaborative approach of this project begins with evaluation and down-selection of MO precursors through evaporation measurements and metal-organic chemical vapor deposition (MOCVD) screening at Tufts. MOMBE experiments at MIT can then focus within a high-value parameter space for epitaxial thin film growth. The combination of chemical analysis and film characterization capabilities available across the collaboration allows detailed study of the film-forming reactions at the solid-vapor interface. In addition to providing training opportunities for graduate students, this project expands workforce training opportunities for community college students through the Guided Academic Industry Network (GAIN). In this program, students at local community colleges acquire experience in materials research and development through two summer internships, one in academia and a second one in industry.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术总结有许多已知的半导体材料，它们的不同特性是使从相机，太阳能电池到计算机，高速电信等不同技术的不同技术。最近已证明，一类新的称为Chalcogenide Perovskites的半导体具有独特的特性组合，使这些材料可用于太阳能电池应用。迄今为止，制造这些材料需要高温和晶体生长速度缓慢。未来的技术开发和商业上可行的制造将需要一种方法，使这些材料更快，在较低的温度下。马萨诸塞州技术学院和塔夫茨大学研究人员之间的合作项目得到了NSF材料研究部的固态和材料化学和陶瓷计划的支持，将开发一种新的化学方法，以使硫化硫化硫化浆果化的钙化化学方法比在没有质量质量的情况下使甲藻蛋白酶钙蛋白酶钙质较快，在较低的温度下较低。这项基本科学的见解还将为其他半导体家庭的研发提供信息，并在计算技术中有潜在的影响。该项目通过培训半导体化学和材料研究的培训研究生开发了未来的劳动力。 This project also expands workforce training opportunities for community college students by supporting an internship program – the Guided Academic Industry Network (GAIN) – that provides students from Boston-area community colleges experiences in materials research and development in academia and industry.Technical SummaryThis collaborative project between researchers at the Massachusetts Institute of Technology and Tufts University, supported by the Solid State and Materials Chemistry and Ceramic Programs in NSF’s Division of Materials Research, Focuses基于对金属有机分子束外延（MOMBE）制造高质量的粉红色化合物化合物半导体的高质量外延薄膜的过程，开发出高质量的粉红色薄膜的过程。含有耐火酸金属（例如ZR）的硫代化合物化合物半导体具有宽度的当前感兴趣。在适度的基础研究中，必须在适度的温度下处理高质量的薄膜加工，并使未来的制造能够（包括异质整合），但是由于非常低的蒸气压力金属和非常高的蒸气压力核糖量，仍然存在重大的科学障碍。这项工作的三个高级目标是：（1）使用金属有机（MO）前体研究基于ZR的基于ZR的硫元化合物化合物半导体； （2）开发出分子束外延（MBE）的变化，该变化允许新的访问葡萄糖生成剂化合物半导体的结晶膜； （3）扩大社区大学生的劳动力培训机会。该项目的协作方法始于通过蒸发测量值和金属有机化学蒸气沉积（MOCVD）筛选在簇簇的评估和下调MO前体的启动。然后，MIT的MOMBE实验可以集中在高价值参数空间内，以实现外延薄膜的生长。整个协作中可用的化学分析和膜表征能力的组合允许详细研究固体蒸气界面的膜形成反应。除了为研究生提供培训机会外，该项目还通过指导的学术行业网络（GAN）为社区大学生提供了劳动力培训机会。在该计划中，当地社区学院的学生通过两个暑期实习获得了材料研发方面的经验，其中一个在学术界和第二个行业中获得了一项奖项。该奖项反映了NSF的法定任务，并通过使用该基金会的知识分子的优点和更广泛的影响来评估NSF的法定任务，并被认为是宝贵的支持。