SBIR Phase I: Development of a low-cost Silicon Carbide Power Switch Technology

SBIR第一阶段：开发低成本碳化硅功率开关技术

• 批准号: 2015088
• 负责人: Vipindas Pala
• 金额: $ 22.5万
• 依托单位: LOGISIC DEVICES, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-05-15 至 2021-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2015088&HistoricalAwards=false
• 关键词: SBIR; Phase; Development; low; cost

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to accelerate the adoption of silicon carbide power semiconductors for energy efficient power electronics. The technology developed in this Phase I proposal will build an intelligent, low-cost, high-performance, silicon carbide power switch. The proposed technology can potentially increase energy efficiency by up to 10% and reduce power electronic energy dissipation by 5X for a wide range of applications, including industrial power supplies, motor drives, solar inverters, battery chargers, adapters for consumer electronics and in electric vehicles. In addition, the proposed technology is also an enabler for efficient power delivery in future applications such as electric aircraft, space flight and quantum computing.This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel four-terminal silicon carbide field-effect transistor that, when combined with a silicon metal-oxide-semiconductor field-effect transistor in a novel topology, will create an innovative wide-bandgap switch. The proposed device innovations will allow 50% die-size reduction compared to existing silicon carbide solutions, with similar or better switching losses, and with the potential to achieve cost parity with silicon technology in high-volume production. Moreover, the proposed switch has excellent gate reliability without the need for tight controls on the gate or drain overshoot. By combining the power of advanced silicon technology with silicon carbide the proposed research presents an opportunity to enable a truly intelligent power-switching platform with high power density and high efficiency.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该小企业创新研究 (SBIR) 第一阶段项目的更广泛影响/商业潜力是加速碳化硅功率半导体在节能电力电子设备中的采用。第一阶段提案中开发的技术将构建智能、低成本、高性能的碳化硅电源开关。 所提出的技术可以将能源效率提高高达 10%，并将电力电子能量耗散降低 5 倍，适用于多种应用，包括工业电源、电机驱动、太阳能逆变器、电池充电器、消费电子产品和电动汽车适配器。此外，所提出的技术也是电动飞机、太空飞行和量子计算等未来应用中高效电力传输的推动者。这个小型企业创新研究（SBIR）第一阶段项目将展示一种新型四端碳化硅领域——效应晶体管与硅金属氧化物半导体场效应晶体管以新颖的拓扑结构相结合，将创建一种创新的宽带隙开关。与现有的碳化硅解决方案相比，所提出的器件创新将允许芯片尺寸减小 50%，具有相似或更好的开关损耗，并且有可能在大批量生产中实现与硅技术的成本平价。此外，所提出的开关具有出色的栅极可靠性，无需严格控制栅极或漏极过冲。通过将先进硅技术与碳化硅的力量相结合，拟议的研究为实现具有高功率密度和高效率的真正智能功率开关平台提供了机会。该奖项反映了 NSF 的法定使命，并通过评估被认为值得支持基金会的智力价值和更广泛的影响审查标准。