Collaborative Research: Scalable Photo-patterning of Two-Dimensional Nanomaterials for Reconfigurable Microelectronics

合作研究：用于可重构微电子学的二维纳米材料的可扩展光图案化

• 批准号: 1930769
• 负责人: Yi Gu
• 金额: $ 29.32万
• 依托单位: Washington State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-09-01 至 2023-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1930769&HistoricalAwards=false
• 关键词: Collaborative; Research; Scalable; Photo; patterning

Advances in modern electronics have been largely driven by the success in fabricating and packaging microscopic devices into integrated circuits. The recent emergence of two-dimensional nanomaterials enables unique and superior electronic and optoelectronic circuit functionalities, which are promising for the next-generation microelectronics beyond silicon. A key challenge to realizing this vision is the lack of manufacturing approaches that are capable of integrating and producing two-dimensional nanomaterial-based microelectronics at a large scale. This award addresses this challenge through fundamental research on a photo-patternable medium, which can lead to scalable manufacturing of reconfigurable microelectronic devices. The photo-patterning method is applicable to various two-dimensional materials for versatile circuit functionalities. Reconfigurable microelectronics is a key component enabling advanced technologies such as artificial intelligence and the internet of things. This project enhances U.S. competitiveness in these critical areas and advances national prosperity and security. Undergraduate and graduate students and senior researchers benefit from this project through multidisciplinary laboratory research, and the general public benefits through multifaceted outreach activities.This project investigates a novel manufacturing approach, based on switchable non-volatile ferroelectric gating, to define fundamental electronic elements (e.g. p-n junctions) and to fabricate functional electronic devices (e.g. logic gates and photodiode arrays) in a wide range of two-dimensional (2D) nanomaterials. This approach centers on photo-patterning the ferroelectric phase regions in In2Se3 thin films, a scalable process that is compatible with established photolithography procedures. Additional benefits of this approach include circuit reconfigurability, maintaining the material lattice pristineness as no defects or dopants are introduced for the p-n junction formations, and compatibility with chemically sensitive materials such as the halide perovskites. This project addresses a key scientific issue central to the successful implementation of this approach, particularly the photon-induced phase transition kinetics in In2Se3 as the fundamental mechanism underlying the photo-patterning process. The mechanistic insight obtained provides an important guide for optimizing the process parameters. In addition, the effects of the ferroelectric gating are studied with a focus on verifying and understanding the resulting p-n junction characteristics, such as the barrier height and the space-charge region width, which are critical to device prototyping. The project is a collaboration between experts in synthesis and characterization of In2Se3 and halide perovskite thin films and involves the study of the photo-patterning process and the ferroelectric gating effects on different 2D nanomaterial systems, demonstrating the versatility of this scalable approach in manufacturing reconfigurable microelectronic devices and circuits.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

现代电子产品的进步主要是由于将显微镜设备的成功驱动到集成电路中的成功驱动。二维纳米材料的最新出现使独特的和优质的电子和光电路电路功能是有望在硅以外的下一代微电子中有望。意识到这种愿景的一个主要挑战是缺乏能够整合和生产基于二维纳米材料的微电子的制造方法。该奖项通过对可拍摄的媒介的基本研究来解决这一挑战，这可以导致可扩展的可重构微电子设备的制造。照片造影方法适用于多种二维材料，用于多功能电路功能。可重新配置的微电子学是使高级技术（例如人工智能和物联网）的关键组成部分。该项目增强了美国在这些关键领域的竞争力，并提高了国家繁荣和安全。本科生和研究生和高级研究人员通过多学科实验室研究从该项目中受益匪浅，以及通过多方面的外展活动带来的一般公众利益。本项目研究一种基于可切换的非挥发性铁电彩控的新型制造方法，以定义基本电子元素和to toe demod functions functions and gromod decode igod decode incode incode incode incode incode incode incode device insonic indod device insonic inf. eque devices ind。二维（2D）纳米材料的广泛范围。这种方法集中在In2se3薄膜中的小铁相区域的集中，这是一种与已建立的光刻程序兼容的可扩展过程。这种方法的其他好处包括电路可重构性，维持材料晶格原始性，因为没有引入P-N结构的缺陷或掺杂剂，以及与诸如Halide Perovskites等化学敏感材料（例如Halide perovskites）的兼容性。该项目解决了成功实施这种方法的关键科学问题，尤其是在IN2SE3中被光子引起的相位过渡动力学，这是摄影过程的基本机制。获得的机械见解提供了优化过程参数的重要指南。此外，研究了铁电控态的影响，重点是验证和了解所得的P-N连接特性，例如屏障高度和空间充电区域宽度，这对于设备原型设计至关重要。该项目是在In2Se3和Halide Perovskite薄膜合成和表征专家之间进行的合作，涉及对光图案过程的研究与对不同2D纳米材料系统的铁电控效应的效果通过使用基金会的知识分子和更广泛影响的评论标准来通过评估来支持。

项目成果

Understanding Microscopic Operating Mechanisms of a van der Waals Planar Ferroelectric Memristor

• DOI: 10.1002/adfm.202009999
• 发表时间: 2020-12-10
• 期刊: ADVANCED FUNCTIONAL MATERIALS
• 影响因子: 19
• 作者: Gabel, Matthew;Gu, Yi
• 通讯作者: Gu, Yi