CNS Core: Small: Architecting Secure-by-Design ReRAM-Based Memories

CNS 核心：小型：构建基于 ReRAM 的安全设计存储器

• 批准号: 1908471
• 负责人: Rickard Ewetz
• 金额: $ 49.96万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-10-01 至 2023-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1908471&HistoricalAwards=false
• 关键词: CNS; Core; Small; Architecting; Secure

Emerging Resistive Random-Access Memory (ReRAM) may replace flash-based Non-Volatile Memory (NVM) technology in future. Unfortunately, ReRAM technology may introduce new security vulnerabilities. This proposal will investigate the security implications of ReRAM-based NVMs in computing systems and how to structure secure-by-design ReRAM-based memories.This project will investigate security implications of ReRAM, and develop countermeasures against ReRAM side-channel information leakage. The project has three thrusts. The first thrust aims to understand the potential information leakage in such emerging technologies. The second thrust will focus on innovating architectural support to eliminate potential side-channel information leakage. The third thrust will concentrate on system software level solutions.The project will involve training of graduate and undergraduate students and will make an effort towards involving undergraduate and minority students in research. Outreach activities are planned through social media and the Orlando Science center.The project data will be stored in repository maintained in https://stars.library.ucf.edu/memristor-based-memories. The data, models, and simulators will be maintained for at least five years after the project ends.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

新兴的电阻随机访问记忆（RERAM）将来可以替换基于Flash的非挥发性内存（NVM）技术。不幸的是，RERAM技术可能会引入新的安全漏洞。 该提案将研究基于RERAM的NVM在计算系统中的安全含义，以及如何构建基于重新设计的安全性回忆。本项目将调查RERAM的安全含义，并开发针对RERAM侧渠道信息泄漏的对策。该项目有三个推力。第一个推力旨在了解此类新兴技术的潜在信息泄漏。第二个推力将集中于创新建筑支持，以消除潜在的侧渠道信息泄漏。第三个推力将集中在系统软件级别的解决方案上。该项目将涉及研究生和本科生的培训，并将努力参与研究生和少数群体研究。通过社交媒体和奥兰多科学中心计划进行外展活动。项目数据将存储在https://stars.library.ucf.edu/memristor基于的Memories中的存储库中。项目结束后，将至少维护数据，模型和模拟器。该奖项反映了NSF的法定任务，并且使用基金会的知识分子优点和更广泛的影响标准，被认为值得通过评估来获得支持。

项目成果

Computational Restructuring: Rethinking Image Processing using Memristor Crossbar Arrays

• DOI: 10.23919/date48585.2020.9116255
• 发表时间: 2020-03
• 期刊: 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE)
• 作者: Baogang Zhang;Necati Uysal;Rickard Ewetz

RC-NVM: Recovery-Aware Reliability-Security Co-Design for Non-Volatile Memories

RC-NVM：非易失性存储器的恢复感知可靠性-安全性协同设计

• DOI: 10.1109/tdsc.2023.3279031
• 发表时间: 2023
• 期刊: IEEE Transactions on Dependable and Secure Computing
• 影响因子: 7.3
• 作者: Zubair, Kazi Abu;Abdullah, Rahaf;Mohaisen, David;Awad, Amro
• 通讯作者: Awad, Amro

Towards resilient analog in-memory deep learning via data layout re-organization

通过数据布局重组实现弹性模拟内存深度学习

• DOI: 10.1145/3489517.3530532
• 发表时间: 2022
• 期刊: ACM
• 作者: Rashed, Muhammad Rashedul;Awad, Amro;Jha, Sumit Kumar;Ewetz, Rickard
• 通讯作者: Ewetz, Rickard

Understanding and Characterizing Side Channels Exploiting Phase-Change Memories

理解和表征利用相变存储器的侧通道

• DOI: 10.1109/mm.2023.3238894
• 发表时间: 2023
• 期刊: IEEE Micro
• 影响因子: 3.6
• 作者: Chowdhuryy, Md Hafizul;Ewetz, Rickard;Awad, Amro;Yao, Fan
• 通讯作者: Yao, Fan

Computational Restructuring: Rethinking Image Compression Using Resistive Crossbar Arrays

计算重构：重新思考使用电阻交叉阵列的图像压缩

• DOI: 10.1109/tcad.2020.3010714
• 发表时间: 2021
• 期刊: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
• 影响因子: 2.9
• 作者: Zhang, Baogang;Uysal, Necati;Ewetz, Rickard
• 通讯作者: Ewetz, Rickard