Spin scattering of topologically protected electrons at defects

缺陷处拓扑保护电子的自旋散射

• 批准号: 237702727
• 负责人: Privatdozent Dr. Phivos Mavropoulos
• 金额: --
• 依托单位: PGI-1 / IAS-1: Quanten-Theorie der Materialien
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2013
• 资助国家: 德国
• 起止时间: 2012-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/237702727?language=en
• 关键词: Spin; scattering; topologically; protected; electrons

The field of Topological Insulators (TI) is growing in two directions: discovery of new materials with new topological concepts, e.g. Weyl semimetals, or applications in already known and investigated materials. The present proposal comprises topics in the latter direction with emphasis in transport phenomena and spin-charge conversion: Edelstein (magnetoelectric) effect, spin-orbit torque, spin pumping, anomalous Hall effect, and potentiometry on TI. Transport phenomena are always related to dissipation and phase decoherence effects. A ubiquitous source of dissipation during charge or spin transport is scattering off impurity atoms and other defects. Our gained experience on impurity scattering from the first funding period will be applied here.Our findings on the focussing effect in Bi2Te3, on the possibility of back-scattering via the Fermi Surface nesting, or on the shaping of the scattering properties by changing the Fermi surface via doping, all these are examples of the richness and potential for applications and for tailoring transport properties on TI. By means of Boltzmann-type equations, where the ab-initio-calculated scattering amplitude and band-structure enter, we will systematically investigate prospective applications and give guidelines to experiment. Experience gained in the community shows that the most popular three-dimensional TI, Bi2Te3 and Bi2Se3, are well described by density-functional theory, and therefore we have confidence in our approach. At the same time we will continue to bring the core of our method, i.e. the scatering amplitude, to test versus the experiment by comparing quasiparticle interference patterns and potentiometry calculations with the results of our experimental colleagues (P. Sessi/M. Bode, Y. Ando, C. Bobisch, B. Voigtländer).

拓扑绝缘子（TI）的领域正在向两个方向增长：发现具有新拓扑概念的新材料，例如Weyl半法，或已知和研究的材料中的应用。本提案包括在后来方向上的主题，重点是传输现象和自旋递增转换：Edelstein（磁电）效应，自旋轨道扭矩，自旋泵浦，旋转泵，异常霍尔效应和对TI的潜在测量法。运输现象始终与耗散和相位分解效应有关。充电或自旋运输过程中无处不在的耗散来源是散射杂质原子和其他缺陷。我们将在此处应用我们在杂质散射方面获得的杂质散射经验。我们对BI2TE3中的聚焦效果的发现，关于通过费米表面嵌套进行后散射的可能性，或通过掺杂通过掺杂来改变费米语表面的散射特性的形状，所有这些都是富人的示例，以及用于应用程序和尾随物业的典型的范围和用于尾随的ti ti ti ti ti ti ti。通过Boltzmann型方程，在AB-Initio估计的散射放大器和带构结构输入中，我们将系统地研究前瞻性应用，并为实验提供指南。在社区中获得的经验表明，最流行的三维Ti，Bi2Te3和bi2Se3在密度功能理论中很好地描述了，因此我们对方法有信心。同时，我们将继续将方法的核心（即经过的放大器）与实验同事的结果进行比较，以测试与实验相对于实验（P. Sessi/m。Bode，Y。Ando，Y。Ando，C。Bobisch，B.voigigtländer）。