SaTC: STARSS: Small: Assuring Security and Privacy of Emerging Non-Volatile Memories

SaTC：STARSS：小型：确保新兴非易失性存储器的安全性和隐私

基本信息

批准号：
1814710
负责人：
Swaroop Ghosh
金额：
$ 23.93万
依托单位：
Pennsylvania State Univ University Park
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2018
资助国家：
美国
起止时间：
2018-08-01 至 2023-07-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1814710&HistoricalAwards=false
关键词：
SaTC STARSS Small Assuring Security

项目摘要

Conventional volatile memories such as static random-access memory (static RAM) suffer from significant leakage power whereas conventional storage class non-volatile memories (NVM) such as flash memory suffer from higher write energy, poor performance and low endurance. Emerging NVMs such as, spin-transfer torque RAM (STTRAM) and resistive RAM (ReRAM) offer zero leakage, high-density, scalability and high endurance. Due to these promising aspects, emerging NVMs are already being commercialized by several companies. Although NVMs can reap energy and performance benefits they may face new security challenges. This research will expose and address the security and privacy threats to NVMs.This research will (i) identify the vulnerabilities of NVMs by understanding the interaction between device properties and ambient parameters, (ii) identify integrity threats such as tampering and row-hammering, (iii) propose methods of real-time attack sensing, (iv) develop circuits and system-level techniques such as nano-shielding and memory access control to ensure data integrity, (v) identify privacy threats such as unauthorized access and fault injection attack to extract secret data, and (vi) propose quantized memory, intelligent erasure and camouflaging of side channels to ensure data privacy.The success of this research may lead to wider adoption of NVMs in security-critical sectors such as healthcare and banking. With growing acceptance of emerging NVMs in automobiles and solid state drives this work may have more immediate benefits, such as enabling on-chip, NVM-enabled, low-power devices, as well as spreading cybersecurity literacy. All publicly released data will be made available after the project and will be posted at http://www.logics.psu.edu.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

传统的挥发性记忆（例如静态随机记忆（静态RAM））具有显着的泄漏功率，而传统的存储类非挥发性记忆（NVM），例如闪存记忆（NVM），其写入能量较高，性能差和耐力较低。新兴的NVM，例如自旋转移扭矩RAM（StTRAM）和电阻RAM（RERAM）提供零泄漏，高密度，可伸缩性和高耐力。由于这些有希望的方面，新兴的NVM已经被多家公司商业化。尽管NVM可以收获能量和绩效益处，但他们可能会面临新的安全挑战。 This research will expose and address the security and privacy threats to NVMs.This research will (i) identify the vulnerabilities of NVMs by understanding the interaction between device properties and ambient parameters, (ii) identify integrity threats such as tampering and row-hammering, (iii) propose methods of real-time attack sensing, (iv) develop circuits and system-level techniques such as nano-shielding and memory access control to ensure data完整性，（v）确定隐私威胁，例如未经授权的访问和故障注射攻击以提取秘密数据，以及（vi）提出量化的记忆，智能擦除和伪装侧渠道以确保数据隐私。这项研究的成功可能会导致NVMS在安全至关重要的领域中更广泛地采用了诸如医疗保健和银行业务。随着对汽车和固态驱动器中新兴的NVM的接受越来越多，这项工作可能会带来更直接的好处，例如启用芯片，启用NVM，低功耗设备，以及传播网络安全素养。所有公开发布的数据将在项目之后提供，并将发布在http：//www.logics.psu.edu.edu..edu..edu..edu..edu..edu..edu..edu..edu..edu..edu..edu..edu..edu..edu..edu.edu..edu.edu.edu..edu.edu.edu.edu.ed..psu.edu.edu.edu.edu.edu.ed.p.plogics.psu.edu.edu。

项目成果

期刊论文数量（41）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Test challenges and solutions for emerging non-volatile memories

新兴非易失性存储器的测试挑战和解决方案

DOI：
10.1109/vts.2018.8368632
发表时间：
2018
期刊：
VLSI Test Symposium (VTS
影响因子：
0
作者：
Khan, Mohammad Nasim;Ghosh, Swaroop
通讯作者：
Ghosh, Swaroop

Hardware Assisted Buffer Protection Mechanisms for Embedded RISC-V

DOI：
10.1109/tcad.2020.2984407
发表时间：
2020-12
期刊：
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
影响因子：
2.9
作者：
Asmit De;Aditya Basu;Swaroop Ghosh;T. Jaeger
通讯作者：
Asmit De;Aditya Basu;Swaroop Ghosh;T. Jaeger

SCANN: Side Channel Analysis of Spiking Neural Networks

DOI：
10.3390/cryptography7020017
发表时间：
2023-03
期刊：
Cryptogr.
影响因子：
0
作者：
Karthikeyan Nagarajan;Rupshali Roy;R. Topaloglu;Sachhidh Kannan;Swaroop Ghosh
通讯作者：
Karthikeyan Nagarajan;Rupshali Roy;R. Topaloglu;Sachhidh Kannan;Swaroop Ghosh

Power side channel attack analysis and detection

电源侧通道攻击分析与检测

DOI：
发表时间：
2020
期刊：
international conference on computer-aided design
影响因子：
0
作者：
Gattu, Navyata and
通讯作者：
Gattu, Navyata and

Cache-Out: Leaking Cache Memory Using Hardware Trojan

DOI：
10.1109/tvlsi.2020.2982188
发表时间：
2020-06-01
期刊：
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
影响因子：
2.8
作者：
Khan, Mohammad Nasim Imtaiz;De, Asmit;Ghosh, Swaroop
通讯作者：
Ghosh, Swaroop

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Swaroop Ghosh其他文献

An Efficient Circuit Compilation Flow for Quantum Approximate Optimization Algorithm

一种高效的量子近似优化算法电路编译流程

DOI：
发表时间：
2020
期刊：
Design Automation Conference
影响因子：
0
作者：
M. Alam;Abdullah Ash;Swaroop Ghosh
通讯作者：
Swaroop Ghosh

Guest Editorial Emerging Memories - Technology, Architecture and Applications (First Issue)

客座社论新兴记忆 - 技术、架构和应用（第一期）

DOI：
发表时间：
2016
期刊：
IEEE J. Emerg. Sel. Topics Circuits Syst.
影响因子：
0
作者：
Swaroop Ghosh;R. Joshi;D. Somasekhar;Xin Li
通讯作者：
Xin Li

A 1 Gb 2 GHz 128 GB/s Bandwidth Embedded DRAM in 22 nm Tri-Gate CMOS Technology

采用 22 nm 三栅 CMOS 技术的 1 Gb 2 GHz 128 GB/s 带宽嵌入式 DRAM

DOI：
10.1109/jssc.2014.2353793
发表时间：
2015
期刊：
IEEE Journal of Solid-State Circuits
影响因子：
5.4
作者：
F. Hamzaoglu;U. Arslan;N. Bisnik;Swaroop Ghosh;M. Lal;N. Lindert;Mesut Meterelliyoz;R. Osborne;Joodong Park;S. Tomishima;Yih Wang;Kevin Zhang
通讯作者：
Kevin Zhang