Nanomanufacturing of Atomically-Uniform Two-Dimensional Materials over Large Areas
大面积原子均匀二维材料的纳米制造
基本信息
- 批准号:1760931
- 负责人:
- 金额:$ 32.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2018
- 资助国家:美国
- 起止时间:2018-07-01 至 2022-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This award supports research to overcome a challenge of mutual exclusiveness of the crystalline quality and lateral size in the manufacture of two-dimensional materials. Two-dimensional materials are atomically thin films with properties that can revolutionize low-power electronics, biological detection, multi-functional composites and energy storage applications that promise important benefits for the US society and economy. The roadblock to these applications is that, when grown in large size, the two-dimensional material's crystallinity is poor and conventional heat treatment does not improve the crystallinity because the materials are typically resistant to high temperatures. This award enables the investigation of a fundamentally different approach, where a two-dimensional material is grown over a large area with initially low quality, which is then greatly improved through the combination of electrical and mechanical treatments. This is a multi-disciplinary approach, which trains the graduate students in cutting edge aspects of nanomanufacturing, materials science and mechanical engineering. The project involves undergraduate, women and under-represented minority students in research to better train the diverse work force of the future.This award investigates the manufacture of atomically thin two-dimensional (2D) materials over large areas by atomic layer or pulsed layer deposition. The as-grown nanosteets are usually of low crystallinity. The crystallinity is enhanced with a combination of electron wind force and mechanical stress. The electrons transfer their momentum at the defects and grain boundaries to impart unprecedented atomic/defect mobility at lower temperatures. The role of mechanical stress is to accelerate the electrical annealing. The hypothesis is that the stress field around the defect can intensify the local strain energy, which is a driving force for crystallization and grain growth. Computational models, based on reactive empirical bond-order potential with the electron wind force imparted to individual atoms, are developed to guide the experimental research. Experiments are performed inside the transmission electron microscope to understand the synthesis of ultra-thin films and electro-mechanical annealing. The in-situ microscopy reveals the transformation from a low quality amorphous phase to a highly crystalline state. The research demonstrates that high crystallinity 2D atomic layer materials can be achieved by a novel electrical and mechanical treatment instead of conventional heat treatment. The research also investigates scaling up of this technique by wafer-scale synthesis on a substrate coated for high residual stress followed by electrical annealing.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
该奖项支持研究克服二维材料制造中晶体质量和横向尺寸相互排斥的挑战。二维材料是原子薄膜,其特性可以彻底改变低功耗电子、生物检测、多功能复合材料和储能应用,为美国社会和经济带来重要利益。这些应用的障碍是,当以大尺寸生长时,二维材料的结晶度很差,并且传统的热处理不能提高结晶度,因为这些材料通常耐高温。该奖项使人们能够研究一种根本不同的方法,即在大面积上生长二维材料,最初质量较低,然后通过电气和机械处理的结合大大改善。这是一种多学科方法,对研究生进行纳米制造、材料科学和机械工程前沿方面的培训。该项目涉及本科生、女性和代表性不足的少数族裔学生参与研究,以更好地培训未来的多元化劳动力。该奖项研究通过原子层或脉冲层沉积在大面积上制造原子薄二维 (2D) 材料。生长的纳米石通常具有低结晶度。电子风力和机械应力的结合增强了结晶度。电子在缺陷和晶界处转移动量,从而在较低温度下赋予前所未有的原子/缺陷迁移率。机械应力的作用是加速电退火。假设缺陷周围的应力场可以增强局部应变能,这是结晶和晶粒生长的驱动力。开发了基于反应性经验键序势以及赋予单个原子的电子风力的计算模型来指导实验研究。在透射电子显微镜内进行实验,以了解超薄膜的合成和机电退火。原位显微镜揭示了从低质量非晶相到高度结晶态的转变。研究表明,高结晶度的二维原子层材料可以通过新型电和机械处理而不是传统的热处理来实现。该研究还研究了通过在涂覆高残余应力的基板上进行晶圆级合成,然后进行电退火来扩大该技术的规模。该奖项反映了 NSF 的法定使命,并通过使用基金会的智力优势和更广泛的影响进行评估,被认为值得支持审查标准。
项目成果
期刊论文数量(8)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Microstructural processing of steel at ambient surface temperature
环境表面温度下钢的显微组织加工
- DOI:10.1016/j.msea.2021.141233
- 发表时间:2021-04-01
- 期刊:
- 影响因子:6.4
- 作者:J. Kidd;Zahabul Islam;D. Waryoba;A. Haque
- 通讯作者:A. Haque
In Situ Observation of β-Ga 2 O 3 Schottky Diode Failure Under Forward Biasing Condition
正向偏置条件下β-Ga 2 O 3 肖特基二极管失效的原位观察
- DOI:10.1109/ted.2020.3000441
- 发表时间:2020-08
- 期刊:
- 影响因子:3.1
- 作者:Islam, Zahabul;Xian, Minghan;Haque, Aman;Ren, Fan;Tadjer, Marko;Glavin, Nicholas;Pearton, Stephen
- 通讯作者:Pearton, Stephen
Enhancement of WSe2 FET Performance Using Low-Temperature Annealing
使用低温退火增强 WSe2 FET 性能
- DOI:10.1007/s11664-020-08087-w
- 发表时间:2020-03-01
- 期刊:
- 影响因子:2.1
- 作者:Zahabul Islam;Azimkhan Kozhakhmetov;Joshua Robinson;A. Haque
- 通讯作者:A. Haque
Defect annihilation in heavy ion irradiated polycrystalline gold
- DOI:10.1016/j.matlet.2020.128694
- 发表时间:2024-09-13
- 期刊:
- 影响因子:3
- 作者:Zahabul Islam;C. Barr;K. Hattar;A. Haque
- 通讯作者:A. Haque
Quality Enhancement of Low Temperature Metal Organic Chemical Vapor Deposited MoS2: An Experimental and Computational Investigation
低温金属有机化学气相沉积 MoS2 的质量提高:实验和计算研究
- DOI:10.1088/1361-6528/ab2c3a
- 发表时间:2019-07
- 期刊:
- 影响因子:3.5
- 作者:Islam; Zahabul
- 通讯作者:Zahabul
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Md Haque其他文献
Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides
- DOI:
10.1039/c7nr07586c - 发表时间:
2017-12 - 期刊:
- 影响因子:6.7
- 作者:
Kehao Zhang;Bhakti Jariwala;Jun Li;Natalie C. Briggs;Baoming Wang;Dmitry Ruzmetov;Robert A. Burke;Jordan O. Lerach;Tony G. Ivanov;Md Haque;Randall M. Feenstra;Joshua A. Robinson - 通讯作者:
Joshua A. Robinson
Md Haque的其他文献
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{{ truncateString('Md Haque', 18)}}的其他基金
Defect-Electron Interaction at Ambient Temperature in Metallic Materials
金属材料中环境温度下的缺陷-电子相互作用
- 批准号:
2103928 - 财政年份:2022
- 资助金额:
$ 32.5万 - 项目类别:
Standard Grant
Defect-Electron Interaction at Ambient Temperature in Metallic Materials
金属材料中环境温度下的缺陷-电子相互作用
- 批准号:
2103928 - 财政年份:2022
- 资助金额:
$ 32.5万 - 项目类别:
Standard Grant
Heterojunctions as the Weakest Link: A Fundamental Investigation of Damage Evolution in Electronic Devices
异质结作为最薄弱的环节:电子设备损伤演化的基础研究
- 批准号:
2015795 - 财政年份:2020
- 资助金额:
$ 32.5万 - 项目类别:
Standard Grant
Heterojunctions as the Weakest Link: A Fundamental Investigation of Damage Evolution in Electronic Devices
异质结作为最薄弱的环节:电子设备损伤演化的基础研究
- 批准号:
2015795 - 财政年份:2020
- 资助金额:
$ 32.5万 - 项目类别:
Standard Grant
Vacancy Engineering for Enhanced Strength and Toughness of Metals
增强金属强度和韧性的空位工程
- 批准号:
1609060 - 财政年份:2016
- 资助金额:
$ 32.5万 - 项目类别:
Standard Grant
An Integrated Lab-on-a-Chip for Nanoelectronic Materials
纳米电子材料集成芯片实验室
- 批准号:
1028521 - 财政年份:2011
- 资助金额:
$ 32.5万 - 项目类别:
Standard Grant
Mechanics of Materials at the Extreme Length-Scales
极端长度尺度的材料力学
- 批准号:
1029935 - 财政年份:2010
- 资助金额:
$ 32.5万 - 项目类别:
Standard Grant
Nano-mechanical Properties of Grain Boundaries
晶界的纳米力学特性
- 批准号:
0625650 - 财政年份:2007
- 资助金额:
$ 32.5万 - 项目类别:
Standard Grant
Nano-mechanics of Carbon Nanotube-Polymer Interfaces
碳纳米管-聚合物界面的纳米力学
- 批准号:
0555420 - 财政年份:2006
- 资助金额:
$ 32.5万 - 项目类别:
Standard Grant
Career: In-situ Monitoring of Opto-electro-mechanical Responses of Single Cells to External Stimuli using MEMS
职业:使用 MEMS 原位监测单细胞对外部刺激的光电机械响应
- 批准号:
0545683 - 财政年份:2006
- 资助金额:
$ 32.5万 - 项目类别:
Standard Grant
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