Hybrid Organic-Inorganic Lead-Halide Perovskite-Based Active Terahertz Devices

混合有机-无机卤化铅钙钛矿基有源太赫兹器件

基本信息

  • 批准号:
    1810096
  • 负责人:
  • 金额:
    $ 37.5万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2018
  • 资助国家:
    美国
  • 起止时间:
    2018-08-15 至 2021-07-31
  • 项目状态:
    已结题

项目摘要

Non-technical:Silicon electronics face a technological bottleneck even as there is a need for devices that operate at ever increasing speeds. Terahertz (THz) technology is viewed as a potential solution to this problem as it will enable devices that operate at speeds of 100 GHz to 10,000 GHz, far faster than conventional electronics. The project will create active THz devices using a relatively new family of semiconductors, organic-inorganic hybrid lead halide perovskites. Perovskites have recently gained significant attention because of their potential for high-performance solar cells. The basic properties of perovskites that make them attractive for solar cells also make them appealing for THz applications. For example, the response of perovskites to light can be altered chemically by changing the halide group in the molecule. Perovskites are also easy to process. High quality thin films of perovskites can be readily deposited via a simple spin coating process that is routinely used in the semiconductor processing industry. Different perovskites with distinct optical and electronic properties can be easily deposited next to one another. In contrast, this is difficult to do with conventional inorganic semiconductors, such as silicon and gallium arsenide. This ease of fabrication allows for new device capabilities that are simply not possible when only one type of semiconductor is used. The PI will work to broaden participation in science education through experiences such as the Utah Science Olympiad. The PI will develop classes for high school teachers, involve undergraduate and high school students in research, and engage with first generation students in the Salt Lake Valley.Technical:The proposed work intends to develop a new class of terahertz (THz) devices based on organic-inorganic lead halide perovskites. These semiconductors, while well examined for photovoltaic applications, have been almost completely unexplored for THz applications. They are extremely attractive for THz applications because their optical properties can be chemically engineered with relative ease. Since they can be solution processed, multiple perovskites can be cast and delineated with extremely high precision in close proximity to one another, without any degradation to the material response. We intend to develop a unique fabrication technique that allows for patterning of these semiconductors with um-scale precision using a polymer delamination process that protects the deposited perovskite layers, while additional layers are deposited and defined. By doing so, we expect to create active THz devices that exhibit functionality that is not possible using only a single semiconductor, such as silicon or gallium arsenide. Specifically, we intend to demonstrate (i) ultrafast THz frequency agile devices, (ii) electro-optic devices using 2D perovskites, where the applied (THz) electric field can induce the Stark effect or quantum confined Stark effect in the multiple quantum well structures, and (iii) field effect transistors based that exhibit optical wavelength sensitive control of the THz properties. The proposed research offers transformative capabilities because the use of multiple perovskites within a single device proposed here is technically challenging to achieve using conventional semiconductors.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
非技术:硅电子产品面临着技术瓶颈,即使需要以不断提高的速度运行的设备。 Terahertz(THZ)技术被视为解决此问题的潜在解决方案,因为它将以100 GHz至10,000 GHz的速度运行的设备,远比传统电子产品快得多。该项目将使用相对较新的半导体家族,有机无机混合铅卤化物钙钛矿创建主动THZ设备。由于它们可能对高性能太阳能电池的潜力,最近引起了极大的关注。使它们对太阳能电池有吸引力的钙钛矿的基本特性也使它们吸引了THZ应用。例如,可以通过改变分子中的卤化物组化学改变钙钛矿对光的反应。钙壶也很容易处理。可以通过简单的自旋涂料工艺容易地沉积钙壶的高质量薄膜,该过程通常在半导体加工行业中使用。具有不同光学特性和电子特性的不同钙壶可以很容易地彼此沉积。相比之下,这很难与常规无机半导体(例如硅和砷化凝胶)一起做。这种易于制造的允许新的设备功能,当仅使用一种类型的半导体时,这些功能根本是不可能的。 PI将通过诸如犹他州科学奥林匹克运动会等经验来扩大科学教育的参与。 PI将为高中教师开发课程,涉及研究生和高中生研究,并与盐湖谷的第一代学生互动。技术:拟议的工作旨在开发新的Terahertz(THZ)设备,基于有机机制的铅铅Halide Halide Perovskites。这些半导体虽然对光伏应用进行了良好的检查,但几乎没有针对THZ应用的探索。它们对THZ应用非常有吸引力,因为它们的光学性能可以相对轻松地化学设计。由于可以处理解决方案,因此可以用极高的精度彼此近距离铸造和描绘多个钙钛矿,而不会对材料响应进行任何降解。我们打算开发一种独特的制造技术,该技术允许使用Polymer分层过程以保护沉积的钙钛矿层,以UM尺度精度对这些半导体进行模式,同时沉积并定义了其他层。通过这样做,我们期望创建活跃的THZ设备,这些设备仅使用单个半导体(例如硅或砷化凝胶),无法使用该功能。 Specifically, we intend to demonstrate (i) ultrafast THz frequency agile devices, (ii) electro-optic devices using 2D perovskites, where the applied (THz) electric field can induce the Stark effect or quantum confined Stark effect in the multiple quantum well structures, and (iii) field effect transistors based that exhibit optical wavelength sensitive control of the THz properties.拟议的研究提供了变革性的功能,因为在此处提出的单个设备中使用多个钙棍能在技术上是具有挑战性的,该奖项反映了NSF的法定任务,并被认为是值得通过基金会的知识分子优点和更广泛影响的审查标准通过评估来获得支持的。

项目成果

期刊论文数量(6)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Gray Level Image Encoding in Plasmonic Metasurfaces
  • DOI:
    10.1007/s11468-020-01151-5
  • 发表时间:
    2020-03
  • 期刊:
  • 影响因子:
    3
  • 作者:
    Ting Zhang;S. Blair
  • 通讯作者:
    Ting Zhang;S. Blair
2D Materials for Terahertz Modulation
  • DOI:
    10.1002/adom.201900550
  • 发表时间:
    2019-08-07
  • 期刊:
  • 影响因子:
    9
  • 作者:
    Gopalan, Prashanth;Sensale-Rodriguez, Berardi
  • 通讯作者:
    Sensale-Rodriguez, Berardi
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Berardi Sensale-Rodriguez其他文献

Berardi Sensale-Rodriguez的其他文献

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{{ truncateString('Berardi Sensale-Rodriguez', 18)}}的其他基金

PFI-TT: Development of Novel Lens Technology for Next Generation Laser Manufacturing
PFI-TT:开发用于下一代激光制造的新型透镜技术
  • 批准号:
    2234413
  • 财政年份:
    2023
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Standard Grant
Reconfigurable free-form metamaterials: a new design paradigm for integrated optoelectronics based on 2D materials
可重构自由形态超材料:基于二维材料的集成光电子学新设计范式
  • 批准号:
    1936729
  • 财政年份:
    2019
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Standard Grant
Closing the terahertz gap with a new-family of terahertz devices based on two-dimensional materials
利用基于二维材料的新系列太赫兹器件缩小太赫兹差距
  • 批准号:
    1407959
  • 财政年份:
    2014
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Standard Grant
CAREER: THz active metamaterials employing thin-film semiconductors
职业:采用薄膜半导体的太赫兹活性超材料
  • 批准号:
    1351389
  • 财政年份:
    2014
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Standard Grant

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职业:具有多维手性结构的有机/无机杂化材料的液晶模板连续渗透合成
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