PFI:AIR - TT: Hot Electron Nanophotonic UV/IR CMOS Quanta Image Sensors and Photodetectors

PFI:AIR - TT：热电子纳米光子紫外/红外 CMOS 量子图像传感器和光电探测器

• 批准号: 1700909
• 负责人: Jifeng Liu
• 金额: $ 20万
• 依托单位: Dartmouth College
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-15 至 2019-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1700909&HistoricalAwards=false
• 关键词: PFI; AIR; TT; Hot; Electron

This PFI: AIR Technology Translation project focuses on translating a novel nanophotonic ultraviolet(UV)/infrared(IR) photodetector structure onto existing silicon-based image sensors, such as those used in cell phone cameras, to greatly extend their vision well beyond the visible light.  These Nanophotonic UV/IR Quanta Image Sensors (UV/IR QIS) are important because they can be seamlessly integrated with the cameras in our cell phones and other devices to "see" things that are outside of the visible spectrum and thus invisible to human eyes. This feature opens the door for low-cost, large-arrayed image sensors to enter the billion-dollar market of UV/IR imaging, including powerline inspection, vehicle driver vision enhancement, biomedical imaging, and environmental monitoring.  The project will result in a proof-of-concept prototype of nanophotonic UV/IR QIS with the following unique features: (1) ultrahigh sensitivity allowing single photon detection; (2) compatibility with existing image sensor array fabrication technology; and (3) ease of miniaturization. These features provide the following advantages when compared to the leading competing technologies: (1) Significantly extended detection spectral range well beyond human vision compared to existing silicon image sensors; (2) Higher sensitivity and larger pixel array than existing GaN (Gallium Nitride)-based UV detectors and InGaAs (Indium Gallium Arsenic)-based IR detectors; and (3) Drastic cost and weight reduction (up to 10-100x) compared to existing solar-blind UV (based on GaN) and short wave IR cameras (based on InGaAs).This project addresses the following technology gap(s) through the following tasks over the course of the project: (A) Optimized device design integrating hot-electron internal photoemission mechanism with existing silicon QIS device structure; (B) Choosing adequate oxide and metallic nanostructures compatible with silicon nanoelectronics for spectral extension into the IR regime (i.e. metal/oxide interfacial barrier engineering); (C) Device fabrication for overall integration. By successfully demonstrating this proof-of-concept prototype, the team will develop techniques to address all these issues. In addition, personnel involved in this project, especially the graduate students, will receive innovation, entrepreneurship, and technology translation experiences through the development of market-entry prototypes and potentially founding their own start-up company.The project engages LaXense, Inc. to expedite the commercialization of the nanophotonic IR photodetectors in this technology translation effort by providing a market-entry application in their existing photonics platform.

该 PFI：AIR 技术翻译项目的重点是将新型纳米光子紫外 (UV)/红外 (IR) 光电探测器结构转换到现有的硅基图像传感器（例如手机摄像头中使用的图像传感器）上，以极大地将其视野扩展到可见光之外这些纳米光子紫外/红外量子图像传感器 (UV/IR QIS) 非常重要，因为它们可以与我们手机和其他设备中的摄像头无缝集成，以“看到”可见光之外的事物。这一特性为低成本、大阵列图像传感器进入价值数十亿美元的紫外/红外成像市场打开了大门，包括电力线检查、车辆驾驶员视力增强、生物医学成像和环境成像。该项目将产生具有以下独特功能的纳米光子紫外/红外 QIS 概念验证原型：(1) 允许单光子检测的超高灵敏度；(2) 与现有图像传感器阵列制造技术兼容； 3) 方便性与领先的竞争技术相比，这些特性具有以下优势：(1) 与现有的硅图像传感器相比，检测光谱范围显着扩展，远远超出人类视觉范围；(2) 比现有的 GaN（氮化镓）具有更高的灵敏度和更大的像素阵列。基于 InGaAs（铟镓砷）的红外探测器和 (3) 与现有技术相比，成本和重量大幅减轻（高达 10-100 倍）日盲紫外线（基于 GaN）和短波红外相机（基于 InGaAs）。该项目在项目过程中通过以下任务解决了以下技术差距：(A) 集成热盲的优化器件设计电子内部光电发射机制与现有的硅 QIS 器件结构；（B）选择与硅纳米电子学兼容的足够的氧化物和金属纳米结构，以将光谱扩展到红外范围（即金属/氧化物界面势垒） (C) 整体集成的设备制造。通过成功演示这个概念验证原型，该团队将开发解决所有这些问题的技术。此外，参与该项目的人员，特别是研究生，将获得创新和创业精神。以及通过开发市场进入原型和可能创立自己的初创公司获得的技术转化经验。该项目聘请 LaXense, Inc. 来加速纳米光子红外光电探测器在这项技术转化工作中的商业化，通过提供现有光子学平台中的市场进入应用。

项目成果

An Efficient Nanophotonic Hot Electron Solar-Blind UV Detector

高效的纳米光子热电子日盲紫外探测器

• DOI: 10.1021/acsphotonics.8b01055
• 发表时间: 2018-09
• 期刊: ACS Photonics
• 影响因子: 7
• 作者: Wang, Zhiyuan;Wang, Xiaoxin;Liu, Jifeng
• 通讯作者: Liu, Jifeng

GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics

绝缘体上GeSn (GeSnOI) 迈向中红外集成光子学

• DOI: 10.3389/fphy.2019.00134
• 发表时间: 2019-09
• 期刊: Frontiers in Physics
• 影响因子: 3.1
• 作者: Wang, Xiaoxin;Cuervo Covian, Alejandra;Je, Lisa;Fu, Sidan;Li, Haofeng;Piao, James;Liu, Jifeng
• 通讯作者: Liu, Jifeng