EAGER: Fundamental studies of material synthesis and contact engineering in CVD MoS2

EAGER：CVD MoS2 材料合成和接触工程的基础研究

基本信息

批准号：
1638598
负责人：
Davood Shahrjerdi
金额：
$ 15万
依托单位：
New York University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2016
资助国家：
美国
起止时间：
2016-07-01 至 2018-12-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1638598&HistoricalAwards=false
关键词：
EAGER Fundamental studies material synthesis

项目摘要

AbstractNon-Technical:Materials and device innovations play crucial roles in maintaining the US leadership in semiconductor industry, which has important economic and societal implications. The proposed research will enable scientific advances in understanding the key factors limiting the performance of an emerging class of electronics materials that is two-dimensional molybdenum disulfide. These materials may find applications in next-generation wearable electronics, which has far reaching applications from health monitoring to security. For these materials to become commercially viable, it is necessary to develop large-area growth techniques. Therefore, there has been an increased research activity to produce device-quality molybdenum disulfide. However, the electronic properties of those materials still need significant improvements. TMD-based technology will be transformative in the development of advanced wearable devices. The broader impacts of this proposal also include training of students in important scientific areas and providing them with expertise in device physics, nanofabrication, and analysis methods. Technical :The overall goal of the proposed research is to enable an in-depth understanding of the interplay between the process parameters and the electrical characteristics of molybdenum disulfide materials and devices. We will systematically explore the origin of device performance degradation in molybdenum disulfide transistors due to the growth process and contacts using advanced material and device characterization techniques. Specifically, this research aims at advancing the field of two-dimensional materials toward their widespread deployment for large-area device applications by pursuing two research goals: (i) in-depth understanding of the effect of various growth parameters on the electronic properties of molybdenum disulfide, and (ii) systematic engineering of contacts in molybdenum disulfide devices to significantly enhance electron injection into the channel from the contacts.

AbstractNon-Technical：材料和设备创新在维持美国在半导体行业中的领导能力中起着至关重要的作用，该行业具有重要的经济和社会意义。拟议的研究将使科学进步能够理解限制新兴类型的电子材料的性能的关键因素，这些因素是二维钼二硫化物的性能。这些材料可能会在下一代可穿戴电子产品中找到应用，从健康监测到安全性，其应用程序已远得多。为了使这些材料在商业上可行，有必要开发大区域的增长技术。因此，研究活动增加了，以产生二硫化钼。但是，这些材料的电子特性仍然需要显着改进。基于TMD的技术将在高级可穿戴设备的开发中具有变革性。该提案的更广泛影响还包括对重要科学领域的学生培训，并为他们提供设备物理，纳米制作和分析方法方面的专业知识。技术：拟议研究的总体目标是对过程参数与二硫化钼材料和设备的电特性之间的相互作用有深入的了解。由于生长过程和使用高级材料和设备表征技术的接触，我们将系统地探索二硫化物晶体管中设备性能降解的起源。具体而言，这项研究旨在通过追求两个研究目标，将二维材料的领域推进其广泛部署大区域设备应用程序：（i）深入了解各种增长参数对钼电子性能的影响二硫化物和（ii）二硫化钼设备中接触的系统工程，可显着从接触中显着增强电子向通道注入。

项目成果

期刊论文数量（6）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Contact Engineering of Monolayer CVD MoS2 Transistors

DOI：
10.1109/drc.2017.7999404
发表时间：
2017-01-01
期刊：
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
影响因子：
0
作者：
Alharbi, Abdullah;Shahrjerdi, Davood
通讯作者：
Shahrjerdi, Davood

Material and device properties of superacid-treated monolayer molybdenum disulfide

DOI：
10.1063/1.4974046
发表时间：
2017-01-16
期刊：
APPLIED PHYSICS LETTERS
影响因子：
4
作者：
Alharbi, Abdullah;Zahl, Percy;Shahrjerdi, Davood
通讯作者：
Shahrjerdi, Davood

Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition

DOI：
10.1063/1.4967188
发表时间：
2016-11-07
期刊：
APPLIED PHYSICS LETTERS
影响因子：
4
作者：
Alharbi, Abdullah;Shahrjerdi, Davood
通讯作者：
Shahrjerdi, Davood

Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS 2 Transistors

衬底耦合对单层MoS 2 晶体管性能和可变性的影响

DOI：
10.1109/led.2018.2883808
发表时间：
2019
期刊：
IEEE Electron Device Letters
影响因子：
4.9
作者：
Alharbi, Abdullah;Huang, Zhujun;Taniguchi, Takashi;Watanabe, Kenji;Shahrjerdi, Davood
通讯作者：
Shahrjerdi, Davood