Enabling Principles for Manufacturing van der Waals Heterostructures with Clean Interfaces
制造具有干净界面的范德华异质结构的启用原则
基本信息
- 批准号:2224139
- 负责人:
- 金额:$ 37.6万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2022
- 资助国家:美国
- 起止时间:2022-09-01 至 2025-08-31
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
A new class of artificial materials can be obtained through the layered assembly of multiple two-dimensional (2D) materials, known as van der Waals heterostructures. These heterostructures are promising for the development of new electronics. In recent years, considerable scientific and technological progress has occurred toward producing different 2D materials with large in-plane dimensions. However, the layered assembly of those materials into similarly sized heterostructures with clean interfaces remains challenging. Specifically, electronics made from those heterostructures require an extremely clean interface between the layers in order to function as desired. This project will establish new strategies for fabricating van der Waals heterostructures with clean interfaces and large dimensions. This award supports the creation of new educational and research opportunities at New York University by fostering the interdisciplinary area of quantum materials and devices and aligns with the NSF Big Idea of Quantum Leap: Leading the Next Quantum Revolution by developing material systems and devices that have the potential to enable new quantum technologies. The project will educate graduate and undergraduate students and prepare them for industrial or academic careers, while aiming to broaden the participation of students with different backgrounds, emphasizing those who are underrepresented in STEM.Many exciting physical properties of 2D materials manifest when these materials are built into heterostructures with clean interfaces. However, a primary barrier to manufacturing these heterostructures is the inability to remove polymeric residues from the interfaces that arise when assembling the 2D materials. This research will help fill the knowledge gap on mechanisms for the interface cleaning of polymer-contaminated heterostructures by studying this problem from an energy viewpoint. To this end, the project will examine three major principles: 1) interactions of polymer residues with 2D materials, 2) mobilization of polymer residues at the interfaces, and 3) mechanical actuation of the mobilized residues through engineering an elastomeric stamp. This research will use heterostructures based on graphene and molybdenum disulfide as test vehicles and employ polyvinyl alcohol and paraffin as examples for the polymeric contaminations. The research team will establish the mechanisms of interface cleaning in polymer-contaminated heterostructures and create clean heterostructures with macroscopic dimensions.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
可以通过多种二维(2D)材料(称为范德华异质结构)的分层组装来获得一类新的人造材料。这些异质结构对于开发新电子产品是有希望的。近年来,在生产具有较大平面内尺寸的不同2D材料方面已经发生了相当大的科学和技术进步。但是,将这些材料的分层组装成具有干净界面的类似大小的异质结构仍然具有挑战性。具体而言,由这些异质结构制成的电子设备需要在图层之间具有极为干净的界面,以便根据需要运行。该项目将建立新的策略,用于制造具有干净界面和较大尺寸的范德华异质结构。该奖项通过促进量子材料和设备的跨学科领域,并与NSF的巨大量子Leap:通过开发具有启用新量子技术的潜力的NSF大型量子革命来支持纽约大学创造新的教育和研究机会。该项目将教育研究生和本科生,并为工业或学术职业做好准备,同时旨在扩大背景不同的学生的参与,强调那些在STEM中代表不足的人。当这些材料内置在具有干净接口的异质结构中时,2D材料的令人兴奋的物理特性显现出来。但是,制造这些异质结构的主要障碍是无法从组装2D材料时出现的界面中去除聚合物残基。这项研究将有助于填补通过从能量观点研究此问题的聚合物污染异质结构的界面清洁界面清洁机制的知识差距。为此,该项目将检查三个主要原则:1)聚合物残基与2D材料的相互作用,2)在界面处动员聚合物残基,以及3)通过工程弹性邮票机械致动动员残基的机械致动。这项研究将使用基于石墨烯和二硫化钼作为测试车的异质结构,并使用聚乙烯醇和石蜡作为聚合物污染的例子。研究小组将在聚合物污染的异质结构中建立界面清洁的机制,并使用宏观尺寸创建清洁异质结构。该奖项反映了NSF的法定任务,并被认为是值得通过基金会的知识分子优点和更广泛的审查标准来通过评估来通过评估来支持的。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Davood Shahrjerdi其他文献
A Framework for Benchmarking Emerging FSCV Neurochemical Sensors
新兴 FSCV 神经化学传感器基准测试框架
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
Moeid Jamalzadeh;Edoardo Cuniberto;Davood Shahrjerdi - 通讯作者:
Davood Shahrjerdi
Selective silicon nanoparticle growth on high-density arrays of silicon nitride
- DOI:
10.1016/j.jcrysgro.2007.08.024 - 发表时间:
2007-10-15 - 期刊:
- 影响因子:
- 作者:
Shawn S. Coffee;Davood Shahrjerdi;Sanjay K. Banerjee;John G. Ekerdt - 通讯作者:
John G. Ekerdt
Davood Shahrjerdi的其他文献
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{{ truncateString('Davood Shahrjerdi', 18)}}的其他基金
EAGER: Experimental studies of electrical double-layer capacitance of graphene using van der Waals heterostructures
EAGER:利用范德华异质结构对石墨烯双电层电容进行实验研究
- 批准号:
1940764 - 财政年份:2019
- 资助金额:
$ 37.6万 - 项目类别:
Standard Grant
Studies of Ion-Exchange Process for Selective Placement of High-Density Carbon Nanotubes for Digital Logic Applications
用于数字逻辑应用的选择性放置高密度碳纳米管的离子交换过程研究
- 批准号:
1728051 - 财政年份:2017
- 资助金额:
$ 37.6万 - 项目类别:
Standard Grant
EAGER: Fundamental studies of material synthesis and contact engineering in CVD MoS2
EAGER:CVD MoS2 材料合成和接触工程的基础研究
- 批准号:
1638598 - 财政年份:2016
- 资助金额:
$ 37.6万 - 项目类别:
Standard Grant
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