Enabling Principles for Manufacturing van der Waals Heterostructures with Clean Interfaces
制造具有干净界面的范德华异质结构的启用原则
基本信息
- 批准号:2224139
- 负责人:
- 金额:$ 37.6万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2022
- 资助国家:美国
- 起止时间:2022-09-01 至 2025-08-31
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
A new class of artificial materials can be obtained through the layered assembly of multiple two-dimensional (2D) materials, known as van der Waals heterostructures. These heterostructures are promising for the development of new electronics. In recent years, considerable scientific and technological progress has occurred toward producing different 2D materials with large in-plane dimensions. However, the layered assembly of those materials into similarly sized heterostructures with clean interfaces remains challenging. Specifically, electronics made from those heterostructures require an extremely clean interface between the layers in order to function as desired. This project will establish new strategies for fabricating van der Waals heterostructures with clean interfaces and large dimensions. This award supports the creation of new educational and research opportunities at New York University by fostering the interdisciplinary area of quantum materials and devices and aligns with the NSF Big Idea of Quantum Leap: Leading the Next Quantum Revolution by developing material systems and devices that have the potential to enable new quantum technologies. The project will educate graduate and undergraduate students and prepare them for industrial or academic careers, while aiming to broaden the participation of students with different backgrounds, emphasizing those who are underrepresented in STEM.Many exciting physical properties of 2D materials manifest when these materials are built into heterostructures with clean interfaces. However, a primary barrier to manufacturing these heterostructures is the inability to remove polymeric residues from the interfaces that arise when assembling the 2D materials. This research will help fill the knowledge gap on mechanisms for the interface cleaning of polymer-contaminated heterostructures by studying this problem from an energy viewpoint. To this end, the project will examine three major principles: 1) interactions of polymer residues with 2D materials, 2) mobilization of polymer residues at the interfaces, and 3) mechanical actuation of the mobilized residues through engineering an elastomeric stamp. This research will use heterostructures based on graphene and molybdenum disulfide as test vehicles and employ polyvinyl alcohol and paraffin as examples for the polymeric contaminations. The research team will establish the mechanisms of interface cleaning in polymer-contaminated heterostructures and create clean heterostructures with macroscopic dimensions.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
通过多层二维(2D)材料的分层组装可以获得一类新型人造材料,称为范德华异质结构。这些异质结构对于新型电子产品的开发很有希望。近年来,在生产具有大面内尺寸的不同二维材料方面,科学技术取得了长足的进步。然而,将这些材料分层组装成具有干净界面的类似尺寸的异质结构仍然具有挑战性。具体来说,由这些异质结构制成的电子器件需要层之间极其干净的界面才能发挥所需的功能。该项目将建立新的策略来制造具有干净界面和大尺寸的范德华异质结构。该奖项通过培育量子材料和器件的跨学科领域,支持纽约大学创造新的教育和研究机会,并与 NSF 量子飞跃的大理念相一致:通过开发具有以下特性的材料系统和器件来引领下一次量子革命:实现新量子技术的潜力。该项目将教育研究生和本科生,为他们从事工业或学术职业做好准备,同时旨在扩大不同背景的学生的参与,重点关注那些在 STEM 领域代表性不足的学生。二维材料的许多令人兴奋的物理特性在这些材料制造出来时就会显现出来形成具有干净界面的异质结构。然而,制造这些异质结构的主要障碍是无法去除组装二维材料时出现的界面上的聚合物残留物。这项研究将从能量角度研究聚合物污染异质结构界面清洁机制,有助于填补聚合物污染异质结构界面清洁机制的知识空白。为此,该项目将研究三个主要原则:1)聚合物残基与二维材料的相互作用,2)聚合物残基在界面处的移动,以及3)通过设计弹性体印模对移动的残基进行机械驱动。这项研究将使用基于石墨烯和二硫化钼的异质结构作为测试载体,并使用聚乙烯醇和石蜡作为聚合物污染物的例子。研究团队将建立聚合物污染异质结构中的界面清洁机制,并创建具有宏观尺寸的清洁异质结构。该奖项反映了 NSF 的法定使命,并通过使用基金会的智力价值和更广泛的影响审查标准进行评估,认为值得支持。
项目成果
期刊论文数量(0)
专著数量(0)
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Davood Shahrjerdi其他文献
A Framework for Benchmarking Emerging FSCV Neurochemical Sensors
新兴 FSCV 神经化学传感器基准测试框架
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
Moeid Jamalzadeh;Edoardo Cuniberto;Davood Shahrjerdi - 通讯作者:
Davood Shahrjerdi
Davood Shahrjerdi的其他文献
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{{ truncateString('Davood Shahrjerdi', 18)}}的其他基金
EAGER: Experimental studies of electrical double-layer capacitance of graphene using van der Waals heterostructures
EAGER:利用范德华异质结构对石墨烯双电层电容进行实验研究
- 批准号:
1940764 - 财政年份:2019
- 资助金额:
$ 37.6万 - 项目类别:
Standard Grant
Studies of Ion-Exchange Process for Selective Placement of High-Density Carbon Nanotubes for Digital Logic Applications
用于数字逻辑应用的选择性放置高密度碳纳米管的离子交换过程研究
- 批准号:
1728051 - 财政年份:2017
- 资助金额:
$ 37.6万 - 项目类别:
Standard Grant
EAGER: Fundamental studies of material synthesis and contact engineering in CVD MoS2
EAGER:CVD MoS2 材料合成和接触工程的基础研究
- 批准号:
1638598 - 财政年份:2016
- 资助金额:
$ 37.6万 - 项目类别:
Standard Grant
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