SHF: CSR: Small: CAD for THz lateral SiGe HBT on SOI to address Amdahl's Law

SHF：CSR：小型：SOI 上太赫兹横向 SiGe HBT 的 CAD，以解决阿姆达尔定律

• 批准号: 1618143
• 负责人: Mona Hella
• 金额: $ 45万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-07-15 至 2021-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1618143&HistoricalAwards=false
• 关键词: SHF; CSR; Small; CAD; THz

Modern microprocessors face a serious challenge. Their recent development cycles have not seen clock rate improvement, and their designs have relied upon so called multiple cores to produce enhanced performance. With a few exceptions, there has been little improvement in run time for many common applications, perhaps for as long as a decade testifying the failure of Moore's Law, on which the progress of computing industry is based. Due to its seemingly extreme speed, the present project explores a device, which may have the potential for breakthroughs in future multiple core computation at reasonable power levels. One of the important outreach goals of the research is to alert the integrated circuit design community (including students) of what is possible using these novel devices. The proposed research is focused on trying to make it easy for such designers to investigate this approach on their own, thus potentially resulting in extensive societal impact.The technical goal of this proposal is to investigate the use of lateral Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) fabricated in a Silicon-on-Insulator (SOI) process. The impetus for this work comes from preliminary research demonstarting that these structures can drive capacitive loads (IC interconnect) at speeds exceeding 1 THz and with lower power than current and future FIN-FET CMOS devices. Specifically, the project will develop CAD tools for the lateral/SOI variety of high-speed SiGe heterojunction bipolar transistors (HBT).

现代微处理器面临着严峻的挑战。 他们最近的开发周期没有看到时钟速率的改进，他们的设计依赖所谓的多核来产生增强的性能。 除了少数例外，许多常见应用程序的运行时间几乎没有改善，也许长达十年的时间证明了摩尔定律的失败，而计算行业的进步正是基于摩尔定律。 由于其看似极高的速度，本项目探索了一种设备，该设备可能在未来合理功率水平的多核计算方面具有突破的潜力。该研究的重要推广目标之一是提醒集成电路设计界（包括学生）使用这些新颖器件的可能性。拟议的研究重点是试图让这些设计人员能够轻松地自行研究这种方法，从而可能产生广泛的社会影响。该提案的技术目标是研究横向硅锗 (SiGe) 异质结双极的使用采用绝缘体上硅 (SOI) 工艺制造的晶体管 (HBT)。这项工作的动力来自于初步研究，该研究证明这些结构可以以超过 1 THz 的速度驱动电容负载（IC 互连），并且功耗低于当前和未来的 FIN-FET CMOS 器件。具体来说，该项目将为横向/SOI 各种高速 SiGe 异质结双极晶体管 (HBT) 开发 CAD 工具。