GOALI: Optimization of Ion Beam Extraction - Enabling Technology for Advanced Semiconductor Fabrication

GOALI：离子束提取的优化 - 先进半导体制造的支持技术

• 批准号: 1617880
• 负责人: EARL SCIME
• 金额: $ 42.5万
• 依托单位: West Virginia University Research Corporation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-09-15 至 2020-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1617880&HistoricalAwards=false
• 关键词: GOALI; Optimization; Ion; Beam; Extraction

This project will lead to developing a basic understanding of how to create beams of ions to be used to improve silicon wafer processing. The silicon chips at the heart of the modern age of electronics are comprised of millions to billions of very small manufactured structures. To function electronically, these structures have to have their ability to conduct electrons modified and they have to be physically constructed through a nanoscale machining process. Both of these processes rely on having plasmas (very hot gasses whose atoms have been broken up into positively charged ions and negatively charged electrons) interact with the silicon wafer. The plasmas cut through, or etch, the silicon to create the structures; and electric fields created by the plasma embed high speed ions into the silicon to change the electrical resistance of the silicon. This project focuses on a new device that creates beams of ions to be used in this manufacturing process. It is a partnership between scientists at West Virginia University (WVU) and Varian Semiconductor Equipment - a business unit of Applied Materials Corporation. Using diagnostics developed at WVU and an industrial processing tool, the team will investigate the process of ion beam formation in the tool in order to improve the three-dimensional processing of nanoscale computing and memory devices. In addition, this project supports the training of graduate and undergraduate students in a research environment that synergistically combines basic and applied plasma physics; improves the percentage of women and minorities obtaining advanced degrees in physics; attracts high quality undergraduates into physics through involvement in cutting-edge research activities; and supports a STEM education initiative that extends to over half the counties in West Virginia. While the extraction of ions from aperture sheaths is a key part of many technologies, the direct measurement of beam properties in the compact geometries of plasma processing tools is problematic. The goal of this project is to develop a fundamental understanding of the dependence of beam properties of Applied Materials new ion implantation tool on the key control parameters and geometry of the beam source. This, in turn, will enable creation of validated, predictive models of the entire ion implantation system. The specific scientific questions to be addressed in these studies will resolve long-standing questions concerning the extraction of ion beams from boundary sheaths and will thereby advance the state-of-the-art in ion beam technology.

该项目将导致对如何创建用于改善硅晶片加工的离子光束的基本理解。现代电子产品核心的硅芯片包括数百万到数十亿至数十亿个非常小的制造结构。为了以电子方式运作，这些结构必须具有进行修改的电子的能力，并且必须通过纳米级加工过程进行物理构建。这两个过程都依赖于具有血浆（原子被分解为带正电荷离子和带负电荷的电子的非常热的气体）与硅晶片相互作用。切成或蚀刻硅的等离子体以创建结构；血浆产生的电场将高速离子嵌入硅中，以改变硅的电阻。该项目着重于一种新设备，该设备可创建用于此制造过程中的离子光束。它是西弗吉尼亚大学（WVU）的科学家与Varian Semiconductor设备（应用材料公司的业务部门）之间的合作伙伴关系。使用WVU开发的诊断和工业处理工具，该团队将研究工具中的离子光束形成过程，以改善纳米级计算和内存设备的三维处理。此外，该项目还支持在协同结合基本和应用的等离子体物理学的研究环境中对研究生和本科生的培训；提高获得物理高级学位的妇女和少数民族的百分比；通过参与尖端的研究活动，吸引高质量的本科生进入物理学；并支持一项STEM教育计划，该计划扩展到西弗吉尼亚州的一半以上。虽然从孔鞘中提取离子是许多技术的关键部分，但血浆加工工具紧凑的几何形状中的光束性质的直接测量是有问题的。该项目的目的是对应用材料的光束性质的依赖性进行基本理解，新离子植入工具对梁源的关键控制参数和几何形状。 反过来，这将使整个离子植入系统的经过验证的预测模型创建。这些研究中要解决的具体科学问题将解决有关从边界鞘中提取离子梁的长期问题，从而推进离子束技术的最新技术。