SBIR Phase II: Ultra Low Defect Gallium Nitride Mediated by Metal Alloys

SBIR 第二阶段：金属合金介导的超低缺陷氮化镓

• 批准号: 1534736
• 负责人: Francisco Machuca
• 金额: $ 75万
• 依托单位: Tivra Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-15 至 2017-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1534736&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Ultra; Low

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project addresses a path to achieve the metric of less than $1 per kilolumen in Gallium Nitride (GaN) based light emitting diodes (LEDs). This is expected to spur widespread adoption of solid state lighting which, according to the US Department of Energy, could result in electricity savings equal to the output of 44 gigawatt power plants by 2027. The price for LEDs is slowing adoption. LEDs don't typically need to be better; they need to be cheaper. This project could directly address this adoption problem by lowering the cost of making LEDs by eliminating one of the most expensive steps in the LED production process.This Small Business Innovation Research (SBIR) Phase II project will address the technical problems in Gallium Nitride (GaN) based light emitting diodes (LEDs), namely using traditional buffer layers to grow GaN on non-GaN substrates. Traditional approaches are typically expensive and result in crystalline defects because the buffer materials used are non-ductile crystalline structures which very effectively propagate, rather than annihilate, defects. This project develops a new substrate made with a patented crystalline metal and process that will let the manufacturers spend less time and effort to get the same or even better LED crystalline quality than they can achieve today. Low cost growth techniques are used and to reduce defects in GaN LEDs and to improve the dollar per kilolumen cost to performance metric.

该小企业创新研究 (SBIR) 第二阶段项目具有更广泛的影响/商业潜力，为氮化镓 (GaN) 发光二极管 (LED) 实现每千流明低于 1 美元的指标提供了途径。 预计这将刺激固态照明的广泛采用，据美国能源部称，到 2027 年，节省的电力可能相当于 44 吉瓦发电厂的发电量。LED 的价格正在减缓采用速度。 LED 通常不需要变得更好；它只需变得更好即可。他们需要更便宜。该项目可以通过消除 LED 生产过程中最昂贵的步骤之一来降低 LED 制造成本，从而直接解决这一采用问题。这个小型企业创新研究 (SBIR) 第二阶段项目将解决氮化镓 (GaN) 的技术问题）基于发光二极管（LED），即使用传统的缓冲层在非GaN衬底上生长GaN。 传统方法通常很昂贵并且会导致晶体缺陷，因为所使用的缓冲材料是非延展性晶体结构，其非常有效地传播而不是消灭缺陷。该项目开发了一种采用专利晶体金属和工艺制成的新型基板，使制造商能够花费更少的时间和精力来获得与现在相同甚至更好的 LED 晶体质量。 使用低成本生长技术来减少 GaN LED 的缺陷并提高每千流明成本与性能指标的比值。