DMREF: SusChEM: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary Heterostructures

DMREF：SusChEM：异价三元氮化物半导体和混合三元-二元异质结构

基本信息

批准号：
1533957
负责人：
Kathleen Kash
金额：
$ 128.02万
依托单位：
Case Western Reserve University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2015
资助国家：
美国
起止时间：
2015-10-01 至 2021-09-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1533957&HistoricalAwards=false
关键词：
DMREF SusChEM Heterovalent Ternary Nitride

项目摘要

DMREF: SusChEM: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary HeterostructuresNon-technical Description: The binary nitride semiconductors gallium nitride, indium nitride and aluminum nitride and their alloys have found important commercial applications in optoelectronics and high-power electronics, but indium and gallium are expensive and scarce, and flexibility in the design and control of the properties of devices based upon mixtures of just these three compounds is limited. There is growing interest in the much larger, but much less well-studied, family of ternary nitride semiconductors that include, for example, zinc germanium nitride and zinc tin nitride, formed by replacing the group III binary element with equal proportions of group II and group IV elements. Many of these dozens of potentially useful materials are composed entirely of earth-abundant, inexpensive, and benign elements. The increased complexity of the ternary nitrides, and the greater number of materials and combinations, is expected to lead to new materials properties and more flexibility in their design. This project will accelerate research on this new family of materials by combining efforts in theoretical calculations and modeling of devices and properties with synthesis and characterization focused on an important subset of these materials. Dissemination of new and archived results via an interactive website-accessed database available freely to the community will foster a growing network among research groups that will accelerate progress toward understanding and controlling the properties of these materials and developing new applications for them. Technical Description: The research will focus on developing growth and doping methods for ZnGeN2 and ZnGeN2-GaN mixed ternary-binary heterostructures by metalorganic chemical vapor deposition (MOCVD). This focus will take strategic advantage of the mature technology for GaN growth and doping, earlier demonstrations of successful growth of ZnGeN2 by MOCVD, the close lattice mismatch of the two materials, and their close optimized growth conditions. The focus additionally will take advantage of the theoretically predicted large band offset between the two materials, which have similar band gaps in the near-ultraviolet, in the design and synthesis of the interesting heterostructure and alloy systems that result from this situation. The theoretical and experimental results, combined with the development of a network, based upon the publicly accessible database website for research groups working in this area, will lay the foundation for expanding research efforts on this large family of materials.

DMREF: SusChEM: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary HeterostructuresNon-technical Description: The binary nitride semiconductors gallium nitride, indium nitride and aluminum nitride and their alloys have found important commercial applications in optoelectronics and high-power electronics, but indium and gallium are expensive and scarce, and基于这三种化合物的混合物的设计和控制设备性质的灵活性是有限的。人们对更大但较少的三元氮化三元半导体家族的兴趣越来越大，其中包括氮化锌和硝酸锌锌锌锡丁二氮化锌，是通过代替III III二进制元素以相等比例的II组II组和第IV组和IV组元素而形成的。许多这些潜在有用的材料中有许多完全由土壤丰富，廉价和良性元素组成。三元氮化物的复杂性增加，材料和组合数量的增加将导致新材料特性，并在其设计中更灵活。该项目将通过将设备和属性的理论计算和建模与合成和表征结合在这些材料的重要子集上的合成和特征结合使用，从而加速对这一新材料家族的研究。通过交互式网站访问的数据库来传播新的和存档的结果，将在研究小组之间促进一个不断增长的网络，这些网络将加速进步，以理解和控制这些材料的属性并为其开发新的应用程序。技术描述：该研究将着重于为Zngen2和Zngan2-GAN混合三元二元异质结构（MOCVD）开发生长和掺杂方法。这种重点将利用gan生长和掺杂的成熟技术的战略优势，早期证明了MOCVD成功增长了Zngen2，这两种材料的近距离不匹配及其近距离优化的增长条件。焦点还将利用这两种材料之间的理论上预测的大带偏移量，这些材料在近粉状物中具有相似的带隙，在这种情况下引起的有趣异质结构和合金系统的设计和合成。基于在该领域工作的研究小组的公共访问数据库网站，理论和实验结果与网络的开发相结合，将为扩大对这一大型材料家庭的研究工作奠定基础。