MRI: Acquisition of Multi-Material Dry Etcher for Nanophotonics

MRI：购买用于纳米光子学的多材料干蚀刻机

• 批准号: 1532098
• 负责人: Ganesh Balakrishnan
• 金额: $ 55.33万
• 依托单位: University of New Mexico
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-09-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1532098&HistoricalAwards=false
• 关键词: MRI; Acquisition; Multi; Material; Dry

This Major Research Instrumentation (MRI) grant supports the acquisition of an inductively coupled plasma (ICP) etcher at the University of New Mexico's Center for High Technology Materials (CHTM). The ICP allows for the etching of precise patterns, with dimensions ranging from microns to nanometers, on a wide variety of semiconductors. The ability to etch such patterns on semiconductors is key to the realization of advanced semiconductor devices. Photonic devices are an important class of such devices; these include high efficiency solar cells, light-emitting diodes, laser diodes and thermal/night vision sensors. The ICP etcher will be operated within a multi-user cleanroom facility that has a demonstrated track record of research excellence, openness and inclusion. The tool will also play a critical role in the education of undergraduate and graduate students in advanced semiconductor processing technology. The University of New Mexico is a Hispanic Serving Institution and hence a significant numbers of students from underrepresented groups will benefit from this capability. The ICP will also be used in existing NSF Research Experience for Undergraduates (REU) and NSF Research Experience for Teachers (RET) programs based at UNM. The ICP etcher will be able to etch a wide range of III-V semiconductors, including nitrides, phosphides, arsenides and antimonides. Etching can be done controllably and reproducibly by enabling separate optimization of the ion energy, plasma density, and process temperature up to approximately 200 degrees Celsius. The ICP will include a variety of process gases such as SF6, BCL3, He, CH4, H2, Ar, O2, and SiCl4 to offer a broad range of etching capabilities. The innovative research that will be immediately impacted includes: antimonide-based photovoltaic and thermophotovoltaic cells, next generation lithography processing, GaN based light-emitting diodes, laser diodes, power electronics, ultra-high-speed injection-locked InP-based ring lasers, and mid-wave to long-wave focal plane arrays manufactured from quantum dots and strain-layer antimonide superlattices. Also, three NSF Engineering Research Centers (ERCs), namely the Smart Lighting ERC, the ERC for Quantum Energy and Sustainable Solar Technologies (QESST) and the Nanosystems ERC (NERC) for Nanomanufacturing Systems for Mobile Computing and Energy Technologies (NASCENT), will directly benefit from this grant and availability of the ICP etcher.

这项主要的研究工具（MRI）赠款支持新墨西哥大学高科技材料中心（CHTM）的电感耦合等离子体（ICP）Etcher的收购。 ICP允许在各种半导体上蚀刻精确的模式，尺寸从微米到纳米。在半导体上蚀刻这种模式的能力是实现高级半导体设备的关键。光子设备是此类设备的重要类别；其中包括高效率太阳能电池，发光二极管，激光二极管和热/夜视传感器。 ICP Etcher将在多用户洁净室设施中运行，该设施具有卓越的研究，开放性和包容性的记录。该工具还将在高级半导体处理技术的本科生和研究生的教育中发挥关键作用。新墨西哥大学是一家西班牙裔服务机构，因此，来自代表性不足的团体的大量学生将从这一能力中受益。 ICP还将用于本科生的现有NSF研究经验（REU）和NSF研究经验，用于UNM的教师（RET）计划。 ICP蚀刻剂将能够蚀刻广泛的III-V半导体，包括氮化物，磷化物，砷化物和抗氧化剂。可以通过单独优化离子能量，等离子体密度和过程温度，可控制和可重复地进行蚀刻。 ICP将包括各种工艺气体，例如SF6，BCL3，HE，CH4，H2，AR，O2和SICL4，以提供广泛的蚀刻能力。将要立即影响的创新研究包括：基于抗氧化剂的光伏和嗜热伏洛尔电细胞，下一代光刻处理，基于GAN的基于GAN的光发射二极管，激光二极管，激光二极管，电力电子，超高速度注射式INP基于INP的注射式INP基于INP的环和中型量子平面和量子量的量子和量子的量子阵列，以及量子量的量子和量子。超晶格。此外，三个NSF工程研究中心（ERC），即智能照明ERC，量子能量和可持续太阳能技术（Qesst）和用于移动计算和能源技术（Nascent）的纳米制造系统（NERC）ERC（NERC）ERC（NERC），将直接从这项ICP ETCHERCHERABIOLIAL中受益。