Chemical Routes to the Growth of Crystalline Oxides Directly on Germanium for Applications in Future Generation Microelectronic Devices

直接在锗上生长晶体氧化物的化学路线，用于下一代微电子器件

• 批准号: 1437050
• 负责人: John Ekerdt
• 金额: $ 31.48万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-09-01 至 2017-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1437050&HistoricalAwards=false
• 关键词: Chemical; Routes; Growth; Crystalline; Oxides

Presently, the majority of transistors that power microelectronic devices are based on silicon. While there have been significant increases in speed of silicon-based microelectronic devices in recent years, the speed at which silicon-based chips can operate is limited by the material itself, and in order to make faster devices a new semiconductor material is required. Germanium is one such promising material that can enable manufacturing of faster computer chips. One critical challenge in building transistors is the need for a good electrical semiconductor and a good insulator that is compatible with that semiconductor. To make germanium-based chips work, a good electrical insulator is needed. This award is to develop and understand a new type of electrical insulator that is compatible with germanium and which can allow for manufacturing of germanium-based microelectronics. The broader impact of the research will be in continued scaling of transistors to smaller sizes that will provide faster computer processor speeds, lower power consumption, and higher data storage capacities for microelectronic devices. This research examines perovskites for use as dielectric oxides in germanium transistors. Perovskites are selected for their ability to bond chemically to germanium and eliminate the electrical defects that affect device performance. This work will explore how to grow crystalline perovskite oxide films on germanium that meet the many performance requirements of modern microelectronic devices. The research explores an all-chemical growth process that should be scalable, is inherently less costly, and is based on current manufacturing tool infrastructure to promote easy adoption by industry. The research explores and describes the materials chemistry and the surface chemistry associated with growing crystalline SrHfO3 and SrZrO3 on germanium using atomic layer deposition processes. The overarching objectives are to understand and describe processes that lead to the formation of crystalline oxides on Ge (001) with requisite band offsets and interface trap densities in a chemical deposition process. The intellectual merits of the work stem from the specific focus areas of the fundamental studies which are: 1) elucidating the reactions and structural changes at the Ge (001) oxide interface that seed crystalline oxide formation; 2) understanding the evolution of structure in the perovskite layer leading to a crystalline film and how the structure depends on process conditions; and 3) establishing the structure-property-function relationships in the context of a gate oxide in a field effect transistor application.

目前，大多数电源微电子设备的晶体管基于硅。尽管近年来基于硅的微电器设备的速度显着提高，但基于硅芯片可以运行的速度受到材料本身的限制，并且为了使更快的设备提供新的半导体材料。锗是一种有希望的材料，可以使制造更快的计算机芯片制造。在构建晶体管方面的一个关键挑战是需要良好的电气半导体和与该半导体兼容的良好绝缘体。为了使基于锗的芯片起作用，需要一个良好的电绝缘体。该奖项是开发和理解与锗兼容的新型电绝缘子，并可以制造基于锗的微电子。该研究的更广泛影响将是将晶体管持续扩展到较小的尺寸，这些尺寸将提供更快的计算机处理器速度，较低的功耗以及微电器设备的较高数据存储能力。这项研究检查了钙钛矿作为锗晶体管中的介电氧化物。选择了钙棍蛋白酶，因为它们能够将化学粘合到锗并消除影响装置性能的电缺陷的能力。这项工作将探讨如何在锗上种植结晶钙钛矿氧化物膜，这些薄膜满足现代微电子设备的许多性能要求。该研究探讨了一个应扩展的全化增长过程，其本质上的成本较低，并且基于当前的制造工具基础设施，以促进行业易于采用。该研究探索并描述了使用原子层沉积过程在锗上在锗上增长的晶体SRHFO3和SRZRO3相关的材料化学和表面化学。总体目标是理解和描述导致GE（001）上形成结晶氧化物的过程，并在化学沉积过程中具有必要的带偏移和界面陷阱密度。作品的智力优点源于基本研究的特定重点区域：1）阐明GE（001）氧化物氧化物氧化物形成的氧化物（001）氧化物界面的反应和结构变化； 2）了解钙钛矿层中结构的演变，导致结晶膜以及结构如何取决于过程条件； 3）在现场效应晶体管应用中的栅极氧化物的上下文中建立结构 - 特性功能关系。