GOALI/FRG: Epitaxial Growth of Perovskite Films and Heterostructures by Atomic Layer Deposition and Molecular Beam Epitaxy
GOALI/FRG:通过原子层沉积和分子束外延来外延生长钙钛矿薄膜和异质结构
基本信息
- 批准号:1006725
- 负责人:
- 金额:$ 51.55万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2010
- 资助国家:美国
- 起止时间:2010-07-01 至 2013-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
NON-TECHNICAL DESCRIPTION: The semiconductor industry is responsible for much of the world's extraordinary economic expansion over the past fifty years. Continuing the pace of growth and innovation will require new materials, such as crystalline perovskite films that are monolithically integrated with silicon, to be discovered, and efficient processes for their manufacture to be developed. These new material systems present an ideal platform to explore the fundamental materials physics and have numerous potential technology applications. This research develops a chemical route to the growth of these perovskite materials that will enable their insertion into technology applications in the commercial sector. The research combines an interdisciplinary team using a synergistic combination of epitaxial growth, ab initio theory, and in situ characterization as it develops a fundamental framework for growth of perovskite materials. The program partners university researchers with a technology leader in embedded semiconductors to broaden the student experience as they are exposed to problem definition that keeps the end goal of developing a viable technology front and center. The outreach program is aimed at attracting female high-school students to physical sciences and engineering; in collaboration with the physics instructors in local high schools, the students spend summers in research groups at the University of Texas at Austin and participate in "real science" in a supportive environment.TECHNICAL DETAILS: Monolithically integrated hybrid oxide/semiconductor systems employing crystalline perovskite layers present an ideal platform to explore the fundamental materials physics determining electronic and magnetic properties of multiferroic heterostructures, and when integrated with semiconductors, potentially have applications in advanced electronics, hyperspectral sensors, and persistent surveillance and radar technologies. Discovery of materials and their fundamental properties will rely on molecular beam epitaxy (MBE) growth of limited volumes of materials; however, chemical routes, such as atomic layer deposition (ALD) need to be explored in parallel to enable lower cost manufacturing routes, growth over large area substrates, and potentially easier insertion of multifunctional oxide technology applications into the commercial sector. The research develops a fundamental framework for the growth of homo- and heteroepitaxial perovskite films that is built on theory and experimental validation, develops chemical routes centered on ALD, and explores the defect nature of the films and interfaces through spectroscopic and diffraction techniques. The focus is on ALD; MBE is used to complement the samples grown by ALD and to prepare surfaces upon which to initiate ALD or follow the detailed steps in layer growth during ALD. Studies explore growth of SrTiO3, LaAlO3 and (Ba,Sr)TiO3 films and heterostructures. Students use an integrated facility that permits in situ growth by MBE and ALD, and in situ characterization using scanning probes, and electron, X-ray and photon spectroscopies.
非技术描述:在过去的五十年中,半导体行业负责世界上许多非凡的经济扩张。 继续生长和创新的速度将需要新材料,例如与硅单层整合,发现的结晶钙钛矿膜,并有效地开发其制造过程。 这些新材料系统提供了一个理想的平台,用于探索基本材料物理并具有许多潜在的技术应用。 这项研究为这些钙钛矿材料的生长开发了一种化学途径,该途径将使它们能够插入商业部门的技术应用。 该研究使用外延增长,从头算理论和原位表征的协同组合结合了一个跨学科团队,因为它开发了钙钛矿材料生长的基本框架。 该计划合作大学的研究人员与嵌入式半导体技术领域的技术领导者合作,以扩大学生的体验,因为他们接触了问题定义,这是开发可行的技术方面和中心的最终目标。 外展计划旨在吸引女性高中生进入体育科学和工程学;与当地高中的物理讲师合作,学生们在德克萨斯大学奥斯汀分校的研究小组中度过夏天,并在支持性的环境中参加“真正的科学”。技术细节:单层整合的混合氧化物/半导体系统采用了晶体perovskite图层提出了一个理想的平台,可以探索基本材料物理学确定多效异质结构的电子和磁性,并在与半导体集成时,可能在高级电子设备,高光谱传感器以及持续的监管和雷达技术中应用。 材料及其基本特性的发现将依赖于有限体积材料的分子束外延(MBE)生长;但是,需要并行探索化学途径,例如原子层沉积(ALD),以实现较低的成本制造路线,大面积基板的增长以及可能更容易插入多功能氧化物技术中的多功能技术。 该研究开发了一个基本框架,用于建立在理论和实验验证的同型和杂质钙钛矿膜的生长,开发以ALD为中心的化学路线,并通过光谱和衍射技术探索膜和互动的缺陷性质。 重点是ALD; MBE用于补充ALD生长的样品并准备启动ALD或遵循ALD期间层增长的详细步骤的表面。 研究探讨了SRTIO3,LAALO3和(BA,SR)TIO3膜和异质结构的生长。 学生使用允许MBE和ALD的原位增长的集成设施,并使用扫描探针以及电子,X射线和光子光谱法进行原位表征。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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John Ekerdt其他文献
John Ekerdt的其他文献
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{{ truncateString('John Ekerdt', 18)}}的其他基金
Chemical Routes to the Growth of Crystalline Functional Oxides on Germanium
锗上晶体功能氧化物生长的化学路线
- 批准号:
1728656 - 财政年份:2017
- 资助金额:
$ 51.55万 - 项目类别:
Standard Grant
GOALI: Zintl Engineering of Epitaxial Ceramic Films on Gallium Nitride
目标:氮化镓上外延陶瓷薄膜的 Zintl 工程
- 批准号:
1507970 - 财政年份:2015
- 资助金额:
$ 51.55万 - 项目类别:
Continuing Grant
Chemical Routes to the Growth of Crystalline Oxides Directly on Germanium for Applications in Future Generation Microelectronic Devices
直接在锗上生长晶体氧化物的化学路线,用于下一代微电子器件
- 批准号:
1437050 - 财政年份:2014
- 资助金额:
$ 51.55万 - 项目类别:
Standard Grant
Nucleation and Growth of Thin Films and Nanostructures
薄膜和纳米结构的成核和生长
- 批准号:
1160195 - 财政年份:2012
- 资助金额:
$ 51.55万 - 项目类别:
Continuing Grant
GOALI: Negative Capacitance in Epitaxial Oxide Heterostructures
目标:外延氧化物异质结构中的负电容
- 批准号:
1207342 - 财政年份:2012
- 资助金额:
$ 51.55万 - 项目类别:
Continuing Grant
Growth of Ultra Thin Metal Alloy Films
超薄金属合金薄膜的生长
- 批准号:
0854345 - 财政年份:2009
- 资助金额:
$ 51.55万 - 项目类别:
Standard Grant
SGER - Fundamental Understanding of Catalytic Cleavage of Lignin in Ionic Liquids
SGER - 对离子液体中木质素催化裂解的基本了解
- 批准号:
0849342 - 财政年份:2008
- 资助金额:
$ 51.55万 - 项目类别:
Standard Grant
Materials World Network: Design, Growth, and Properties of Boron-based Thin Films for Electronics and Nanosized Electronics
材料世界网络:电子和纳米电子器件用硼基薄膜的设计、生长和性能
- 批准号:
0603004 - 财政年份:2006
- 资助金额:
$ 51.55万 - 项目类别:
Continuing Grant
Hydrocarbon Surface Reactions Over Transition Metals
过渡金属上的碳氢化合物表面反应
- 批准号:
8700876 - 财政年份:1987
- 资助金额:
$ 51.55万 - 项目类别:
Continuing Grant
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