CAREER: Opportunistic Through-Silicon-Via Utilization: Device, Circuit and Design Automation Perspectives

职业：机会性硅通孔利用：器件、电路和设计自动化视角

• 批准号: 1350680
• 负责人: Yiyu Shi
• 金额: $ 40万
• 依托单位: Missouri University of Science and Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-03-01 至 2015-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1350680&HistoricalAwards=false
• 关键词: CAREER; Opportunistic; Through; Silicon; Via

The three-dimensional integrated circuit (3D IC) stacks multiple dies in the vertical dimension using Through-Silicon-Vias (TSVs), which results in significantly reduced footprint, power and latency. While many challenges still exist related to 3D ICs, this project targets the one challenge that will become increasingly important in the next 5 to 10 years and may potentially end the production of 3D ICs: TSVs are quite large in size, yet their diameters do not scale with the devices due to the limitations of wafer handling and aspect ratios. On the other hand, a large number of TSVs are needed to deliver signal and power, to dissipate heat, and to provide redundancy. Moreover, foundries impose a minimum TSV density rule to maintain the planarity of the wafer during chemical and mechanical polishing (CMP). This project tackles the challenge by reconfiguring idle TSVs as devices for various circuits and systems. An opportunistic computer-aided design (CAD) framework will also be put forward for optimum utilization of the TSV devices. The proposed research will pioneer a new and transformative direction for the advancement of 3D ICs at all the design levels - devices, circuits and CAD - with no change required in current semiconductor processes. The PI will also leverage the collaboration with Industrial Technology Research Institute to set up an extensive international internship program for U.S. undergraduates and graduates, which will benefit the general 3D IC research community. In addition, the PI will develop various activities for undergraduates and underrepresented minorities within the research framework, full-filled 3D Tetris contests for Rolla local high school students, and a web 2.0-based 3D forum for collaborative research in the 3D IC community.

三维综合电路（3D IC）使用通过二元驾驶（TSV）堆叠垂直尺寸的多个模具，从而显着降低了足迹，功率和延迟。尽管许多挑战仍然存在与3D IC有关的挑战，但该项目的目标是一个挑战，在未来5到10年中将变得越来越重要，并且可能会结束3D IC的生产：TSV的大小相当大，但由于晶状体处理和纵横比的局限性，它们的直径并未随着设备而扩展。另一方面，需要大量TSV来传递信号和功率，以散发热量并提供冗余。此外，铸造厂施加了最低的TSV密度规则，以维持化学和机械抛光期间晶片的平面度（CMP）。该项目通过将闲置的TSV重新配置为各种电路和系统的设备来应对挑战。还将提出机会性计算机辅助设计（CAD）框架，以最佳利用TSV设备。拟议的研究将在所有设计级别（设备，电路和CAD）上提高3D IC的新方向，而在当前半导体过程中无需改变。 PI还将利用与工业技术研究所的合作，为美国本科生和毕业生建立广泛的国际实习计划，这将使一般的3D IC研究社区受益。此外，PI将在研究框架内针对本科生和代表性不足的少数群体，为Rolla本地高中学生提供全面的3D Tetris竞赛，以及3D IC社区中的合作研究的各种活动。