Robust Room Temperature Electric Field Control of Structural, Magnetic and Transport Properties of Ultra-Thin Shape Memory Heusler Alloys Films

超薄形状记忆赫斯勒合金薄膜的结构、磁性和输运性能的鲁棒室温电场控制

• 批准号: 1310542
• 负责人: Andrei Sokolov
• 金额: $ 36.46万
• 依托单位: University of Nebraska-Lincoln
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-07-01 至 2018-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1310542&HistoricalAwards=false
• 关键词: Robust; Room; Temperature; Electric; Field

TECHNICAL SUMMARY:The goal of this project is to demonstrate a new family of nanoferroic multifunctional devices, based on shape-memory Heusler alloy films in ferroelectric heterojunctions, where resistance, magnetic and structural properties of the Heusler alloys will be switchable by applied electric field. Heusler alloys are a group of intermetallic compounds that have unique and interesting electro-magnetic behaviors, including the magnetic shape-memory effect. Selected shape-memory Heusler alloys are expected to be better than manganite-based compounds because their transformations can be controlled to occur near room temperature. This research attempts to distinguish the roles of electronic and strain-mediated coupling between layers in heterojunctions in order to determine the origin of each effect. It also attempts to identify the mechanism of the martensitic phase transformation in the Heusler alloy films. It is ultimately envisioned that this research may lead to a new class of nanoferroic multifunctional devices enabling new sensor and electronic applications. These devices will have a potential for use in memory, sensors and magnetic refrigeration. Long-established participation of high-school teachers and their students in the research laboratories of the investigators will be enhanced. Graduate and undergraduate students will be educated and trained through research activities.NON-TECHNICAL SUMMARY:The magnetic shape-memory effect in Heusler alloy films will be used to explore physical behaviors of these alloys alone and when paired with other materials to make a functional device. It is ultimately envisioned that this research may lead to a new class of nanoferroic multifunctional devices enabling new sensor and electronic applications. These devices will have a potential for use in memory, sensors and magnetic refrigeration. Long-established participation of high-school teachers and their students in the research laboratories of the investigators will be enhanced. Graduate and undergraduate students will learn nanofabrication techniques, chemical synthesis, sensitive electrical measurements, and theory of quantum transport and magnetization dynamics, providing hands-on experience suitable for their further research and development in leading industrial and academic laboratories.

技术摘要：该项目的目标是展示一系列新的纳米铁多功能器件，该器件基于铁电异质结中的形状记忆霍斯勒合金薄膜，其中霍斯勒合金的电阻、磁性和结构特性将通过施加的电场进行切换。霍斯勒合金是一组金属间化合物，具有独特且有趣的电磁行为，包括磁性形状记忆效应。 选定的形状记忆霍斯勒合金预计比亚锰酸盐基化合物更好，因为它们的转变可以控制在接近室温的情况下发生。这项研究试图区分异质结中各层之间电子和应变介导的耦合的作用，以确定每种效应的起源。它还试图确定赫斯勒合金薄膜中马氏体相变的机制。最终预计这项研究可能会产生新型纳米铁多功能器件，从而实现新的传感器和电子应用。这些设备将具有用于存储器、传感器和磁制冷的潜力。高中教师及其学生长期以来对研究人员研究实验室的参与将得到加强。研究生和本科生将通过研究活动接受教育和培训。非技术摘要：赫斯勒合金薄膜中的磁性形状记忆效应将用于探索这些合金单独的物理行为以及与其他材料配对以制造功能器件时的物理行为。最终预计这项研究可能会产生新型纳米铁多功能器件，从而实现新的传感器和电子应用。这些设备将具有用于存储器、传感器和磁制冷的潜力。高中教师及其学生长期以来对研究人员研究实验室的参与将得到加强。研究生和本科生将学习纳米制造技术、化学合成、敏感电测量以及量子输运和磁化动力学理论，为他们在领先的工业和学术实验室进一步研究和开发提供适合的实践经验。