Investigation of Growth and Dopant Incorporation in Silicon Carbide Nanowires

碳化硅纳米线的生长和掺杂剂掺入研究

• 批准号: 1207053
• 负责人: Roya Maboudian
• 金额: $ 29.14万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-06-01 至 2016-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1207053&HistoricalAwards=false
• 关键词: Investigation; Growth; Dopant; Incorporation; Silicon

NON-TECHNICAL DESCRIPTION: Semiconducting nanowires, high aspect ratio rods with diameters of order tens of nanometers, have received much attention in recent years, due to their anticipated (and in some cases observed) novel optical, thermal, electrical, and mechanical behavior. To date, silicon (Si) nanowires have been the most extensively studied owing both to the technological relevance of the material and to the relative simplicity of the synthesis. However, a number of critical applications, such as high-efficiency electrochemical storage devices and high brightness miniature neutron sources, highlight the limitations of Si nanowires and the need for more robust materials systems. Silicon carbide (SiC) nanowires were chosen for these studies because of the exceptional physicochemical stability of this material. This research project aims to gain a fundamental understanding of the growth mechanism of silicon carbide nanowires and the parameters that control their morphological and electrical properties.TECHNICAL DETAILS: The specific SiC nanowire synthetic approach chosen is Ni-catalyzed chemical vapor deposition from single precursor methyltrichlorosilane and with ammonia as a dopant. The primary analytical techniques include high-resolution transmission electron microscopy (for detailed structural studies), Raman spectroscopy (for structural, vibrational, and optical properties), atom probe tomography (for chemical composition mapping with sub-nm resolution) and field-effect transistor measurements (for electrical characterization, including the Fermi level position and carrier concentration and mobility). From a fundamental point of view, this research is enabling a better understanding of the interplay between the growth parameters (e.g., catalyst, growth temperature, dopant precursor) and the structural, morphological and electrical properties of SiC nanowires. From the applied point of view, the research is highlighting the key factors for synthesizing SiC nanowires with tailored doping for such applications as emitters for vacuum electronics, corrosion resistant charge storage devices, and other energy, sensing, and harsh environment applications. The project is providing core training for graduate and undergraduate students. A variety of outreach activities, including the participation of underrepresented students in research, are underway. The results of this work are being incorporated into talks given to the general public by the researchers and are also being widely disseminated through a variety of means such as refereed journals, conferences, lectures, and demonstration.This project is co-funded by the Electronic and Photonic Materials (EPM) and Ceramics (CER) Programs in the Division of Materials Research (DMR).

非技术描述：半导体的纳米线，高纵横比的杆杆的直径数十个纳米，由于它们的预期（某些情况下）观察到的新型光学，热，电气和机械行为，因此近年来受到了很多关注。迄今为止，由于材料的技术相关性和合成的相对简单性，硅（SI）纳米线是最广泛研究的。但是，许多关键应用，例如高效电化学存储设备和高亮度微型中子源，突出了Si NanoWires的局限性以及对更强大的材料系统的需求。由于该材料具有特殊的物理化学稳定性，因此选择了碳化硅（SIC）纳米线。该研究项目旨在获得对碳化硅纳米线的生长机制以及控制其形态学和电气特性的参数的基本理解。技术细节：选择的特定SIC纳米线合成方法是Ni-Catalyzed化学蒸气从单个前体甲基甲基氯甲烷和ammonia as Ammonia as A dopantania as A dopantane as A dopant。主要的分析技术包括高分辨率传输电子显微镜（用于详细的结构研究），拉曼光谱（用于结构，振动和光学特性），原子探针层析成像（用于用于跨NM分辨率的化学组成映射）以及透视效应测量值（用于电气效应测量值（用于电气表征）（用于电气表征），包括菲尔米级级别和移动率和移动率和移动性）。 从基本的角度来看，这项研究可以更好地了解生长参数（例如催化剂，生长温度，掺杂前体）与SIC纳米线的结构，形态和电性能之间的相互作用。从应用的角度来看，该研究强调了将SIC纳米线合成的关键因素，并针对诸如真空电子设备的发射器，耐腐蚀电荷存储设备以及其他能量，感应和恶劣的环境应用等应用的应用。该项目正在为研究生和本科生提供核心培训。正在进行各种外展活动，包括人数不足的学生参与研究。 研究人员将这项工作的结果纳入了向公众发表的谈判中，并且还通过各种手段（例如，涉及期刊，会议，讲座和演示）进行了广泛传播。本项目由电子和光子材料（EPM）和ceramics（cer）计划共同资助。