NEB: Charge-Density-Wave Computational Fabric: New State Variables and Alternative Material Implementation

NEB：电荷密度波计算结构：新状态变量和替代材料实现

基本信息

批准号：
1124733
负责人：
Alexander Balandin
金额：
$ 130万
依托单位：
University of California-Riverside
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2011
资助国家：
美国
起止时间：
2011-10-01 至 2016-09-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1124733&HistoricalAwards=false
关键词：
NEB Charge Density Wave Computational

项目摘要

Intellectual Merit: This project is awarded under the Nanoelectronics for 2020 and Beyond competition, with support by multiple Directorates and Divisions at the National Science Foundation as well as by the Nanoelectronics Research Initiative of the Semiconductor Research Corporation. Continuing evolution of electronics beyond the limits of the conventional silicon technology requires innovative approaches for solving the heat dissipation, speed and scaling issues. Alternative state variables other than dissipative charge transfer hold promise for drastic improvements in computational power. Collective states of magnetization, spin waves, and exciton condensates are being considered, but, to date, the performance results are modest. This project proposes a revolutionary new approach for the collective states that carry electrical signals, do not require magnetic fields, and can be realized at room temperature. The alternative state variables will be implemented with charge-density waves. The charge-density wave effects have been known for decades but never considered for information processing. The intellectual merit of this project includes better understanding of the material properties and physical processes of charge-density wave materials in highly-scaled, low-dimension regimes that have not yet been explored. The results of the project will lead to optimized device designs for exploiting charge-density waves and accurate understanding of the fundamental limits of the performance metrics. The intellectual merit also includes performance evaluation of the low-noise topological insulator interconnects proposed as part of new architectures. The project will result in new knowledge of the properties of the charge-density wave materials obtained with the help of optical microscopy, atomic-force microscopy, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy and other techniques. Broader Impact: The proposed project will lead to a revolutionary new technology for replacing or complementing conventional silicon complementary metal-oxide-semiconductor technology. The phase, frequency and amplitude of the collective current of the interfering charge waves will encode information and allow for massive parallelism in information processing. The possibility of using the phase for logic operations allows one to minimize the required number of elements per circuit, reduce the power consumption, and ease the scaling requirement. The charge-density wave devices will be implemented with an alternative growth technique ? electrochemical atomic layer deposition ? with demonstrated potential for synthesis of crystalline atomically-thin layers of pertinent materials. The technique will allow the research team to experiment with new chemistries and heterogeneous integration of a variety of charge-density wave materials. The low-dissipation, massively parallel information processing with the collective state variables can satisfy the computational, communication, and sensor technology requirements for decades to come. The successful project will (i) improve the economic competitiveness of the United States; (ii) contribute to national security; and (iii) increase participation of underrepresented minorities in science and engineering. The project will result in improved student education and training at the University of California ? Riverside, a minority serving institution with a large Hispanic student population. The broader impact includes contributions to the development of a synergetic interdisciplinary Materials Science and Education program, as well as contributions to graduate and undergraduate training focused on materials synthesis, at the University of Georgia.

智力奖：该项目在 2020 年及以后纳米电子学竞赛中获奖，得到了美国国家科学基金会多个理事会和部门以及半导体研究公司纳米电子学研究计划的支持。电子产品的不断发展超越了传统硅技术的限制，需要创新的方法来解决散热、速度和缩放问题。除了耗散电荷转移之外的替代状态变量有望大幅提高计算能力。正在考虑磁化、自旋波和激子凝聚的集体状态，但迄今为止，性能结果并不理想。该项目为携带电信号、不需要磁场并且可以在室温下实现的集体状态提出了一种革命性的新方法。替代状态变量将通过电荷密度波来实现。电荷密度波效应几十年来一直为人所知，但从未考虑用于信息处理。该项目的智力价值包括更好地理解尚未探索的高尺度、低维体系中电荷密度波材料的材料特性和物理过程。该项目的结果将导致优化设备设计，以利用电荷密度波并准确理解性能指标的基本限制。智力优点还包括对作为新架构一部分提出的低噪声拓扑绝缘体互连的性能评估。该项目将借助光学显微镜、原子力显微镜、扫描电子显微镜、透射电子显微镜、拉曼光谱和其他技术获得关于电荷密度波材料特性的新知识。更广泛的影响：拟议的项目将带来革命性的新技术，以取代或补充传统的硅互补金属氧化物半导体技术。干扰电荷波的集体电流的相位、频率和幅度将对信息进行编码，并允许信息处理中的大规模并行性。使用该阶段进行逻辑运算的可能性允许人们最大限度地减少每个电路所需的元件数量，降低功耗并减轻缩放要求。电荷密度波器件将采用替代生长技术来实现？电化学原子层沉积 ?具有合成相关材料的晶体原子薄层的潜力。该技术将使研究团队能够试验新的化学物质和各种电荷密度波材料的异质集成。具有集体状态变量的低耗散、大规模并行信息处理可以满足未来几十年的计算、通信和传感器技术要求。该项目的成功将（i）提高美国的经济竞争力； (ii) 为国家安全做出贡献； (iii) 增加代表性不足的少数群体对科学和工程的参与。该项目将改善加州大学的学生教育和培训？ Riverside 是一所少数族裔服务机构，拥有大量西班牙裔学生。更广泛的影响包括对佐治亚大学协同跨学科材料科学和教育项目的发展做出贡献，以及对以材料合成为重点的研究生和本科生培训做出贡献。