NER/SNB: Nanophononics: A New Approach to Electron Transport Enhancement in Nanoscale Devices

NER/SNB：纳米声学：纳米器件中电子传输增强的新方法

• 批准号: 0508516
• 负责人: Alexander Balandin
• 金额: $ 10万
• 依托单位: University of California-Riverside
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-07-01 至 2006-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0508516&HistoricalAwards=false
• 关键词: NER; SNB; Nanophononics; New; Approach

The objective of this research is to demonstrate a possibility of the confined electron - confined phonon scattering rate suppression and corresponding enhancement of the electron mobility in the specially designed acoustically mismatched nanostructures. The novel nanophononic approach is based on the phonon depletion/accumulation effect in the semiconductor nanowires embedded within a barrier material characterized by a smaller acoustic impedance Z (which is a product of the material mass density and the sound velocity). The research is focused on the rigorous calculation of the electron mobility and electrical conductivity in the semiconductor channel embedded into the "acoustically softer" cladding layer; selection of the optimum nanowire and barrier material parameters for the maximum mobility enhancement; and experimental proof-of-the-concept demonstration using the prototype structures. The research will have a strong impact on the electronic industry affecting both the conventional complementary metal-oxide-semiconductor (CMOS) technology and beyond-CMOS electronic device designs. The research will add to the core knowledge of the electron transport in nanostructures and nanodevices, and will help to develop the concept of phonon engineering. The envisioned phonon engineering (nanophononics) approach to the enhancement of the electronic device operation may have an impact comparable to that of the electron band-gap engineering, which brought a revolution to the electronic and optoelectronic industries. The methods developed under this project will be transferred to semiconductor industry. In addition, this interdisciplinary research will help in building a strong nanotechnology educational program in UC-Riverside, the minority serving institution, with the largest minority student population of all 10 University of California campuses.

这项研究的目的是证明在特殊设计的纳米结构中，具有密闭电子的限制性声子散射速率抑制和电子迁移率的相应增强的可能性。新型的纳米句方法基于嵌入屏障材料中的半导体纳米线中的声子耗竭/积累效应，其特征在于较小的声阻抗z（这是材料质量密度和声速的产物）。该研究的重点是对嵌入“声学柔和”覆层层的半导体通道中电子迁移率和电导率的严格计算；选择最大迁移率增强的最佳纳米线和屏障材料参数；并使用原型结构进行实验证明的概念示范。这项研究将对影响传统的互补金属氧化物 - 氧化型技术（CMOS）技术和CMOS电子设备设计的电子产业产生强大的影响。这项研究将增加纳米结构和纳米构造中电子传输的核心知识，并有助于发展声子工程的概念。设想的声子工程（纳米音调）方法可以增强电子设备操作，这可能会产生与电子带隙工程相当的影响，这为电子和光电工业带来了革命。该项目下开发的方法将转移到半导体行业。此外，这项跨学科的研究将有助于在加州大学少数族裔机构的加州大学河畔加州大学，加利福尼亚大学全部10个校园中建立强大的纳米技术教育计划。