NER/SNB: Nanophononics: A New Approach to Electron Transport Enhancement in Nanoscale Devices

NER/SNB：纳米声学：纳米器件中电子传输增强的新方法

• 批准号: 0508516
• 负责人: Alexander Balandin
• 金额: $ 10万
• 依托单位: University of California-Riverside
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-07-01 至 2006-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0508516&HistoricalAwards=false
• 关键词: NER; SNB; Nanophononics; New; Approach

The objective of this research is to demonstrate a possibility of the confined electron - confined phonon scattering rate suppression and corresponding enhancement of the electron mobility in the specially designed acoustically mismatched nanostructures. The novel nanophononic approach is based on the phonon depletion/accumulation effect in the semiconductor nanowires embedded within a barrier material characterized by a smaller acoustic impedance Z (which is a product of the material mass density and the sound velocity). The research is focused on the rigorous calculation of the electron mobility and electrical conductivity in the semiconductor channel embedded into the "acoustically softer" cladding layer; selection of the optimum nanowire and barrier material parameters for the maximum mobility enhancement; and experimental proof-of-the-concept demonstration using the prototype structures. The research will have a strong impact on the electronic industry affecting both the conventional complementary metal-oxide-semiconductor (CMOS) technology and beyond-CMOS electronic device designs. The research will add to the core knowledge of the electron transport in nanostructures and nanodevices, and will help to develop the concept of phonon engineering. The envisioned phonon engineering (nanophononics) approach to the enhancement of the electronic device operation may have an impact comparable to that of the electron band-gap engineering, which brought a revolution to the electronic and optoelectronic industries. The methods developed under this project will be transferred to semiconductor industry. In addition, this interdisciplinary research will help in building a strong nanotechnology educational program in UC-Riverside, the minority serving institution, with the largest minority student population of all 10 University of California campuses.

这项研究的目的是证明在专门设计的声学失配纳米结构中限制电子限制声子散射率抑制和电子迁移率相应增强的可能性。这种新颖的纳米声学方法基于嵌入势垒材料中的半导体纳米线的声子耗尽/累积效应，其特征在于较小的声阻抗Z（其是材料质量密度和声速的乘积）。该研究的重点是对嵌入“声学上更柔软”包层的半导体沟道中的电子迁移率和电导率进行严格计算；选择最佳纳米线和势垒材料参数以最大程度地增强迁移率；以及使用原型结构进行概念验证的实验演示。该研究将对电子行业产生重大影响，影响传统的互补金属氧化物半导体 (CMOS) 技术和超越 CMOS 的电子器件设计。该研究将增加纳米结构和纳米器件中电子传输的核心知识，并将有助于发展声子工程的概念。设想的声子工程（纳米声子学）方法可以增强电子器件的运行，其影响可能与电子带隙工程相媲美，为电子和光电行业带来了一场革命。该项目开发的方法将转移到半导体行业。此外，这项跨学科研究将有助于在加州大学河滨分校建立强大的纳米技术教育项目，加州大学河滨分校是少数族裔服务机构，在加州大学所有 10 个校区中少数族裔学生人数最多。