Optical Studies of Tunneling and Coulomb Correlations in Mixed-Type Quantum Wells

混合型量子阱中隧道效应和库仑相关性的光学研究

• 批准号: 1104718
• 负责人: Hailin Wang
• 金额: $ 34.5万
• 依托单位: University of Oregon Eugene
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2015-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1104718&HistoricalAwards=false
• 关键词: Optical; Studies; Tunneling; Coulomb; Correlations

****Technical abstract****This project will investigate electron-hole bilayers formed in semiconductor quantum well structures, in which electrons and holes reside respectively in wide and narrow wells separated by a thin barrier. A special feature of this structure is that the carrier density can be controlled via optical excitations of the narrow quantum well. Two closely related research directions will be pursued. The first direction explores how manybody Coulomb correlations between electrons and holes across the barrier affect carrier tunneling. The correlation-induced tunneling will also be exploited as a new mechanism for excitonic nonlinear optics. The second direction aims to engineer an array of localized holes, realizing a system where two-dimensional electrons interact in the presence of the electrostatic potential of a hole lattice. A near term goal is to use this tunable semiconductor system to explore and possibly simulate strongly-correlated phenomena such as Mott insulators. This project will support the education of two graduate students in areas of both scientific and technological importance. This training will prepare the students for careers in academia, industry, or government. ****Non-technical abstract****Tunneling of electrons across a barrier in a semiconductor is an interesting quantum mechanical process and serves important roles in many electronic devices. Tunneling is traditionally viewed as a process involving single electrons. This project explores phenomena in semiconductor nanostructures where tunneling processes can depend strongly on interactions or correlations between electrons across the tunneling barrier. This correlation-induced tunneling process will be exploited for applications such as photonic switching devices. Effects of correlations between electrons also play important roles in understanding a variety of fascinating physical phenomena such as high Tc superconductors and magnetism. A second and closely related research direction of this project is to develop a system, in which electrons in a two-dimensional semiconductor structure interact in the presence of a periodic array of positively-charged holes. This system can be used to vary or tailor effects of electron correlations, serving as a platform for investigating and understanding effects of electron correlations in condensed matter systems. This project will primarily be carried out by two graduate students. The research activities will provide these students solid training in areas of both scientific and technological importance, preparing the students for careers in academia, industry, or government.

****技术摘要****该项目将研究以半导体量子井结构形成的电子孔双层，其中电子和孔分别驻留在宽阔和狭窄的井中，这些井被薄壁隔开。 该结构的一个特征是可以通过狭窄量子的光激发来控制载体密度。 将提出两个密切相关的研究指示。 第一个方向探讨了电子和障碍物之间的库仑相关性有多少，影响载体隧道。 相关诱导的隧道也将被利用为激子非线性光学的新机制。 第二个方向旨在设计一系列局部孔，实现一个系统，其中二维电子在存在孔晶格的静电电位的情况下相互作用。 一个近任期的目标是使用这种可调的半导体系统来探索并可能模拟与Mott绝缘体等强相关现象。 该项目将支持两名研究生在科学和技术重要性领域的教育。 这项培训将使学生为学术界，工业或政府的职业做好准备。 ****非技术抽象****电子对半导体中屏障的隧穿是一个有趣的量子机械过程，并且在许多电子设备中起着重要作用。 传统上，隧道被视为涉及单电子的过程。 该项目探讨了半导体纳米结构中的现象，在该现象中，隧道过程可以在隧道屏障中很大程度上取决于电子之间的相互作用或相关性。 这种相关引起的隧道过程将用于诸如光子开关设备之类的应用。 电子之间的相关性的影响在理解各种迷人的物理现象（例如高TC超导体和磁性）方面起着重要作用。 该项目的第二个且密切相关的研究方向是开发一个系统，在该系统中，在二维半导体结构中的电子在存在周期性呈阳性孔的情况下相互作用。 该系统可用于改变或量身定制电子相关性的影响，作为调查和理解凝结物质系统中电子相关性效应的平台。 该项目将主要由两名研究生进行。 研究活动将为这些学生提供科学和技术重要性领域的良好培训，为学生准备学术界，工业或政府的职业做好准备。