Investigations on HVPE - grown InGaN quantum wells on non- and semipolar GaN

非极性和半极性 GaN 上 HVPE 生长 InGaN 量子阱的研究

• 批准号: 198464253
• 负责人: Professor Dr. Josef Zweck
• 金额: --
• 依托单位: Institut für Experimentelle und Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2012
• 资助国家: 德国
• 起止时间: 2011-12-31 至 2015-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/198464253?language=en
• 关键词: Investigations; HVPE; grown; InGaN; quantum

The use of semi- and non-polar crystal facets for the deposition of quantum wells designed for green emitting lasers has been shown to be a successful concept. Therefore, the future research – as suggested by this proposal – is mainly focused on the measurement of internal (piezo-)electric fields both in GaN and InGaN layers. The goals are:- The piezoelectric fields created within quantum wells on various crystal facettes will be measured and compared to theoretical calculations.- The piezoelectric field present within the GaN host material will be measured quantitatively in strength and lateral extension.- The In content within the quantum well will be measured by EDX.- The measured value of the piezoelectric field will be correlated with the In content of the InGaN quantum well.- The density and type of crystallographic defects formed in the quantum well region will be correlated with the In content.

使用半极性和非极性晶面沉积专为绿光发射激光器设计的量子阱已被证明是一个成功的概念，因此，正如本提案所建议的那样，未来的研究主要集中在测量。 GaN 和 InGaN 层中的内部（压电）电场的目标是：- 测量各个晶体面上的量子阱内产生的压电场，并与理论计算结果进行比较。- GaN 主体内存在的压电场。将定量测量材料的强度和横向延伸。- 通过 EDX 测量量子阱内的 In 含量。- 压电场的测量值将与 InGaN 量子阱的 In 含量相关。- 密度和量子阱区域中形成的晶体缺陷的类型将与In含量相关。