Investigations on HVPE - grown InGaN quantum wells on non- and semipolar GaN

非极性和半极性 GaN 上 HVPE 生长 InGaN 量子阱的研究

• 批准号: 198464253
• 负责人: Professor Dr. Josef Zweck
• 金额: --
• 依托单位: Institut für Experimentelle und Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2012
• 资助国家: 德国
• 起止时间: 2011-12-31 至 2015-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/198464253?language=en
• 关键词: Investigations; HVPE; grown; InGaN; quantum

The use of semi- and non-polar crystal facets for the deposition of quantum wells designed for green emitting lasers has been shown to be a successful concept. Therefore, the future research – as suggested by this proposal – is mainly focused on the measurement of internal (piezo-)electric fields both in GaN and InGaN layers. The goals are:- The piezoelectric fields created within quantum wells on various crystal facettes will be measured and compared to theoretical calculations.- The piezoelectric field present within the GaN host material will be measured quantitatively in strength and lateral extension.- The In content within the quantum well will be measured by EDX.- The measured value of the piezoelectric field will be correlated with the In content of the InGaN quantum well.- The density and type of crystallographic defects formed in the quantum well region will be correlated with the In content.

半晶体方面的使用用于为绿色发射激光器设计的量子井的沉积，已被证明是一个成功的概念。因此，如本提案所建议的那样，未来的研究主要集中在Gan和Ingan层中内部（压电）电场的测量上。目标是： - 将测量各种晶体面上在量子井中创建的压电场，并将其与理论计算进行比较。-GAN宿主材料中存在的压电场中存在的压电场将以定量的强度和横向扩展来测量。-量子孔中的量子孔中的量子均应衡量的量子。好吧 - 量子井区域中形成的晶体缺陷的密度和类型将与In含量相关。