SBIR Phase I: Development of Chemical Vapor Deposition of Shape Memory Alloy TiNi Thin Films for Complex Forms

SBIR 第一阶段：复杂形状形状记忆合金 TiNi 薄膜化学气相沉积的开发

基本信息

批准号：
1014097
负责人：
Peter Jardine
金额：
$ 15万
依托单位：
Shape Change Technologies
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2010
资助国家：
美国
起止时间：
2010-07-01 至 2010-12-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1014097&HistoricalAwards=false
关键词：
SBIR Phase Development Chemical Vapor

项目摘要

This Small Business Innovation Research (SBIR) Phase I project seeks to develop an new methodology for the deposition of large-scale uniform and complex shape memory alloy parts. Current deposition methods cannot generate the uniform chemical composition, or the three dimensional geometric complexity, that is required for commercially relevant parts. In addition, the cost of current methods to manufacture TiNi, a key thin film shape memory alloy, is too high, limiting commercial acceptance. Chemical vapor deposition (CVD) of TiNi offers a means to manufacture geometrically complex parts inexpensively. In Phase I, our team will characterize a novel CVD process and characterize the resultant manufactured parts in terms of chemical composition, chemical uniformity, and contamination levels. This data will enable a transition to manufacturing of commercial shape memory devices in Phase II.The broader impact/commercial potential of this project is the development of a new fabrication methodology that will allow for a dramatic reduction in the cost of thin film TiNi sheet products, stents, and open celled foams, by providing a means to manufacture highly consistent, uniform articles in a batch production process. For highly geometrically complex forms, such as high porosity open celled foams, this CVD process is an enabling manufacturing technology. Successful development of this process will revolutionize the thin film TiNi industry by finally supplying products to the marketplace with the required quality and batch-to-batch consistency for wide commercial acceptance.

这项小型企业创新研究（SBIR）I阶段项目旨在开发一种新的方法，用于沉积大型统一和复杂形状的记忆合金零件。当前的沉积方法不能生成商业相关部分所需的均匀化学成分或三维几何复杂性。此外，当前生产Tini的成本是一种关键的薄膜形状记忆合金，太高，限制了商业接受。 Tini的化学蒸气沉积（CVD）提供了一种廉价地制造几何复杂零件的方法。在第一阶段，我们的团队将表征新的CVD过程，并根据化学成分，化学均匀性和污染水平来表征所得制造的零件。该数据将使在II阶段中的商业形状存储器制造过渡。该项目的更广泛的影响/商业潜力是开发一种新的制造方法，该方法将允许通过提供高度一致，均匀的物品在Batch batch the Batch the Batch the Batch the Batch the batch生产的方法来大大降低薄膜TINI薄板产品，支架和开放式电池泡沫的成本。对于高几何复杂的形式，例如高孔隙率开放的电池泡沫，该CVD工艺是一种促成制造技术。这一过程的成功开发将通过最终在市场上提供所需的质量和批处理的一致性来彻底改变薄膜蒂尼行业。