Doping Profiles in Semiconductor Nanowires

半导体纳米线中的掺杂分布

• 批准号: 1006069
• 负责人: Lincoln Lauhon
• 金额: $ 36万
• 依托单位: Northwestern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-01 至 2013-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1006069&HistoricalAwards=false
• 关键词: Doping; Profiles; Semiconductor; Nanowires

Technical: Semiconductor nanowires are potentially transformative materials for electronics and photonics technologies, and doping and composition modulation are the foundation of semiconductor devices. The objective of this project is to understand and control dopant incorporation rates and junction profiles in silicon and germanium nanowires in order to establish a foundation for nanowire device fabrication. Atom probe tomography is used to map the 3-dimensional distribution of donor and acceptor dopant atoms in vapor-liquid-solid and vapor-solid-solid grown nanowires with single dopant atom sensitivity. Varied catalysts and growth conditions will be employed to understand the thermodynamic and kinetic factors that influence doping rates. Such understanding is expected to establish the ultimate limits of junction abruptness for both radial junctions, as in core-shell structures, and axial junctions. Electrical transport and scanning probe measurements, including scanning Kelvin probe microscopy and scanning photocurrent microscopy, are used to determine the fraction of active dopants and measure the electrical profiles of dopant homojunctions. The integrated activities of synthesis, composition mapping, and electrical characterization permit distinctions between electrical properties that arise from nanoscale dopant distributions and those that arise from modified screening on the nano/meso scale. Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. The activity is expected to advance materials and metrology of critical importance to the semiconductor industry. The project integrates research and education by advancing discovery and understanding through involvement of the PI and his graduate students in a new Student Investigative Research program at a local high school and engaging student groups from a senior level process design course in the discovery and optimization of nanowire processing-structure relationships.

技术：半导体纳米线是电子和光子技术的潜在变换材料，掺杂和组成调制是半导体设备的基础。该项目的目的是了解和控制硅和锗纳米线中的掺杂剂掺入率和连接率，以建立纳米线设备制造的基础。原子探针断层扫描用于绘制蒸气 - 液体固体中的供体和受体掺杂原子的3维分布，并具有单掺杂原子敏感性。将采用各种催化剂和生长条件来了解影响掺杂率的热力学和动力学因素。预计这种理解将在两个径向连接处建立结的最终限制，例如在核心壳结构和轴向连接处。电运输和扫描探针测量值，包括扫描开尔文探针显微镜和扫描光电流显微镜，用于确定活性掺杂剂的分数并测量掺杂剂同义的电谱。合成，组成映射和电特性的综合活性允许在纳米级掺杂剂分布与纳米/中介量表上修改的筛选引起的电气特性之间进行区分。非技术性：该项目解决了具有高技术相关性的材料科学主题领域的基础研究问题。预计该活动将推进对半导体行业至关重要的材料和计量学。该项目通过在当地一所高中的新学生调查研究计划中参与发现和理解，从而融入研究和教育，并从高级流程设计课程中吸引学生群体，以发现和优化纳米线处理结构的关系。