EFRI 2-DARE: Scalable Growth and Fabrication of Anti-Ambipolar Heterojunction Devices

EFRI 2-DARE：抗双极异质结器件的可扩展生长和制造

• 批准号: 1433510
• 负责人: Lincoln Lauhon
• 金额: $ 199.98万
• 依托单位: Northwestern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-09-01 至 2019-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1433510&HistoricalAwards=false
• 关键词: EFRI; DARE; Scalable; Growth; Fabrication

Communications systems such as WiFi, GPS, wireless sensor networks, and radio frequency electronics are critical to the nation?s infrastructure and have had a transformative impact on daily life. However, existing applications of wireless technologies are often limited by the power consumption and speed of the underlying electronic switches, or transistors, that send and receive signals. Furthermore, current classes of transistors must be integrated into complex circuits to perform simple functions. This award supports the fundamental research necessary to make new classes of transistors that can improve the performance of existing communications technologies and open up new applications by enabling simplified circuit designs on flexible substrates. The development of inexpensive and scalable approaches to new transistor materials will facilitate the incorporation of these devices into new technologies. Computer models of novel transistors and communications circuits will be shared with industry partners to facilitate the transfer of knowledge and capabilities to industry, growing the high-tech economy. Outreach programs including cooperation with the Chicago Museum of Science and Industry will recruit a broad group of young people to careers in science and technology crucial to the nation?s economy and defense.The objective of the proposed work is to create, characterize, understand, and exploit new classes of electronic and optoelectronic devices by integrating promising two-dimensional monolayer transition metal dichalcogenides with other low dimensional semiconductors including p-type organic semiconductors, sorted semiconducting single walled carbon nanotubes, and other two-dimensional materials. The project will fabricate novel ultrathin p-n heterojunctions of mixed dimensionality that exhibit unique and quantitatively advantageous properties arising from gate transparency and flexibility, and characterize the devices with advanced scanned probe techniques in addition to conventional current and capacitance versus voltage measurements. Custom chemical precursors will be designed and synthesized with the goal of achieving scalable growth and fabrication of ultrathin dichalcogenides by atomic layer deposition over large areas at reduced temperatures. To understand how the device physics leads to new properties and circuit performance, phenomenological models will be integrated into industry accepted nanodevice simulators, and a compact model will be developed. The fundamental knowledge and predictive models of ultrathin heterojunctions will expand engineering frontiers through quantitative understanding of charge transport, the demonstration of novel device characteristics, such as the recently discovered anti-ambipolar behavior, and the exploitation of these behaviors to create novel electronic circuits on flexible substrates with simpler designs and fewer elements than conventional unipolar field effect transistor-based circuits.

诸如WiFi，GPS，无线传感器网络和射频电子设备等通信系统对国家的基础设施至关重要，并且对日常生活产生了变革性的影响。但是，无线技术的现有应用通常受到发送和接收信号的基础电子开关或晶体管的功耗和速度的限制。此外，当前类别的晶体管必须集成到复杂的电路中以执行简单的功能。该奖项支持制造新的晶体管所需的基础研究，这些晶体管可以通过在灵活的基板上启用简化的电路设计来提高现有通信技术的性能并打开新应用程序。开发廉价且可扩展的新晶体管材料方法将有助于将这些设备纳入新技术。新型晶体管和通信电路的计算机模型将与行业合作伙伴共享，以促进知识和能力转移到行业，增长高科技经济。宣传计划包括与芝加哥科学和工业博物馆的合作，将招募一群年轻人从事对国家至关重要的科学和技术职业。拟议的工作的目标是创建，表征，理解和利用新的电子和OptoElectRonic设备，通过将有希望的两型单层型基元组合起来，以使新的电子和OptoElectronic设备集成了其他高度验证的金属dy-sementions dimolientions dimolientions dimolientions dimolagient dyty dicorenty dicicalcogent dyical diciCOgenter，有机半导体，分类的半导体单壁碳纳米管和其他二维材料。该项目将针对混合尺寸的新型超薄P-N异质界化，这些尺寸具有栅极透明度和柔韧性引起的独特和定量有利的特性，并用高级扫描的探针技术来表征设备，除了常规的电流和电容和电压衡量。定制的化学前体将以原子层沉积在降低的温度下在大面积上的原子层沉积来设计和合成，以实现可扩展的生长并制造超薄二核苷。为了了解设备物理学如何导致新的属性和电路性能，现象学模型将集成到行业接受的纳米电视模拟器中，并将开发一个紧凑的模型。超薄异质界面的基本知识和预测模型将通过定量了解电荷传输，新型设备特征的证明，例如最近发现的抗极性行为，以及对这些行为的利用来创建新颖的电子电路对柔性基础上的柔性基础和更少的基于常规的Uniplar tirbor trimel transor的循环效应。