MRI-R2: Acquisition of High Performance Deep Reactive Ion Etching System for Multidisciplinary Engineering Applications

MRI-R2：获取用于多学科工程应用的高性能深反应离子蚀刻系统

• 批准号: 0959695
• 负责人: Jungsang Kim
• 金额: $ 45万
• 依托单位: Duke University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-03-15 至 2011-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0959695&HistoricalAwards=false
• 关键词: MRI; R2; Acquisition; Performance; Deep

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). MRI-R2: Acquisition of High Performance Deep Reactive Ion Etching System for Multidisciplinary Engineering ApplicationsThe objective of this proposal is to acquire a silicon deep reactive ion etching system to be installed and operated within the Shared Materials Instrumentation Facility at Duke University. The proposed system will be installed, operated and maintained with full-time engineering staff support for user training, operation and equipment maintenance. This arrangement ensures a sustainable long-term operation of the tool, while providing access to broad base of interested users from universities, non-profit research institutions and industry to serve as a regional resource.The intellectual merit of this proposal stems from the wide range of research this tool enables. The proposed system is capable of performing a wide range of silicon etching processes including high etch rate etch, high aspect ratio etch, deep sub-micron feature etch in the nanometer scale, smooth sidewall etch, minimal undercutting of silicon-on-insulator substrates, flexible sidewall profile control, and highly selective etch. This tool is expected to enable multidisciplinary research activities that encompass optical micro-electromechanical systems, metamaterials at the micro- and nano-scale, photonic crystals and nanophotonic devices, micro-power generators, precision packaging solutions for optical/electronic devices and systems, terahertz sources, microfluidic devices, and low-cost patterning technologies using molds and stamps.The broader impacts of this program have educational and economical aspect. Addition of this capability to SMIF will provide graduate students and postdoctoral researchers to expand their research experience that will help train a higher quality work force, and enable local startup companies to develop their core technology that will lead to job creation and economic growth.

该奖项是根据2009年《美国复苏与再投资法》（公法111-5）资助的。 MRI-R2：用于多学科工程应用的高性能深部反应离子蚀刻系统的目的是，在杜克大学的共享材料仪器设施中收购硅深反应离子蚀刻系统。建议的系统将在全职工程人员的支持下安装，操作和维护，以用于用户培训，操作和设备维护。这种安排确保了该工具的可持续长期操作，同时为大学，非营利研究机构和行业提供了广泛的用户的访问权限，以作为区域资源。研究此工具可以启用。所提出的系统能够执行各种硅蚀刻过程，包括高蚀刻速率蚀刻，高纵横比蚀刻，深度亚微米特征在纳米尺度上，光滑的侧壁蚀刻，最小的底切下硅在绝缘子底物的底膜，最小柔性侧壁轮廓控制和高度选择性蚀刻。预计该工具将启用涵盖光学微电动系统，微型和纳米尺度的超材料的多学科研究活动，光子晶体和纳米光子设备，微功能发电机，精密包装解决方案，用于光学/电子设备和系统，Terahertz，Terahertz，Terahertz来源，微流体设备以及使用模具和邮票的低成本图案技术。该计划的更广泛影响具有教育和经济的方面。增加SMIF的功能将为研究生和博士后研究人员提供扩大研究经验，这将有助于培训更高质量的劳动力，并使当地的初创公司能够开发其核心技术，从而导致创造就业机会和经济增长。