Scalable Synthesis and Metrology of Epitaxial Graphene on SiC

SiC 上外延石墨烯的可扩展合成和计量

• 批准号: 0926212
• 负责人: Alberto Salleo
• 金额: $ 38万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-15 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0926212&HistoricalAwards=false
• 关键词: Scalable; Synthesis; Metrology; Epitaxial; Graphene

Graphene, a single-atom-think layer of graphite, has exceptional electronic qualities, such as the ability to carry charge at great speed, that make this new nanomaterial attractive for the next generation of electronic devices. Synthesizing and characterizing such ultra-thin material however is especially challenging. Laser irradiation of a single-crystal of silicon carbide (SiC) is proposed as a graphene synthesis method. Laser light absorption causes the decomposition of the SiC and selective evaporation of silicon leaving a graphene layer on the surface. Using the x-ray beam at the Stanford Synchrotron source crystalline perfection and orientation of the laser-synthesized graphene layer will be investigated. Furthermore, bonding defects of the graphene layer will be investigated spectroscopically. Finally, one-step synthesis and patterning will be demonstrated by masking parts of the laser beam during irradiation.The societal benefits of having a graphene synthesis method that can be scaled to large wafers, similarly to silicon, would be very significant. Indeed, making large areas of graphene suitable for the fabrication of devices is one of the main challenges to the development of this material. Furthermore, students working on the project would be trained in the Materials Science of a novel material that is likely to play a role in the next generation of advanced electronic devices. Outreach activities are also planned through the summer institute for middle-school teachers at the Stanford-based NSF center for probing the nanoscale and through the development of hands-on activities that can be exported into a classroom environment.

石墨烯是石墨的单原子思维层，具有出色的电子质量，例如以高速携带电荷的能力，这使得这种新的纳米材料对下一代电子设备有吸引力。然而，合成和表征这种超薄材料特别具有挑战性。提出将碳化硅（SIC）单晶的激光照射作为石墨烯合成方法。激光吸收会导致SIC的分解，并在表面上留下石墨烯层的硅选择性蒸发。将研究在斯坦福同步源源晶体完美和激光合成石墨烯层的方向上使用X射线束。此外，将通过光谱研究石墨烯层的粘结缺陷。最后，一步合成和模式将通过在辐照过程中掩盖激光束的一部分来证明。拥有可以将石墨烯合成方法缩放到大型晶圆的社会益处，与硅相似，这将是非常重要的。确实，制造适合制造设备的石墨烯是该材料开发的主要挑战之一。此外，从事该项目的学生将接受一种新型材料的材料科学培训，该材料可能在下一代高级电子设备中发挥作用。还计划通过位于斯坦福大学NSF探测纳米级的NSF中心的中学教师研究所进行外展活动，并通过开发可以导出到课堂环境的动手活动。