Carrier and Spin Dynamics in InSb- and InMnSb- Based Heterostructures

InSb 和 InMnSb 基异质结构中的载流子和自旋动力学

• 批准号: 0507866
• 负责人: Giti Khodaparast
• 金额: --
• 依托单位: Virginia Polytechnic Institute and State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-08-15 至 2010-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0507866&HistoricalAwards=false
• 关键词: Carrier; Spin; Dynamics; InSb; InMnSb

Non TechnicalIn analogy with the early development of semiconductor electronics, there is now a rapidly growing interest in the science and engineering of low-dimensional magnetic and narrow gap semiconductors. Narrow gap and magnetic semiconductors have the potential to lead to revolutionary spintronic devices in which the spin degree of freedom in addition to the charge can be used and manipulated. The expected advantages using spin-based devices include increasing data processing speed and integration densities, decreasing electric power consumption, and nonvolatility. The focus of this project is to study unexplored optical and magneto-optical properties of InSb-based narrow gap heterostructures and ferromagnetic structures such as InMnSb, with an emphasis on charge and spin dynamics using laser spectroscopic techniques. The proposed activities will train undergraduate and graduate researchers in frontier scientific projects to educate next generation experts in semiconductor optics with broad knowledge in quantum optics, laser spectroscopy, and nanotechnology to prepare them for a productive and exciting future in the fast growing technological world.Technical:In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors such as InSb based heterostructures. Narrow gap semiconductors offer several scientifically unique features such as a small effective mass, a large g-factor, a high intrinsic mobility, and large spin-orbit coupling. In semiconductors with large spin-orbit interaction the coupling of electron spin polarization with electric fields or currents can provide new opportunities for spin manipulation in electronic and optoelectronic devices. The goal of this project is to study unexplored optical properties of InSb-based quantum wells and the newest member of III-V ferromagnetic structures, InMnSb, with an emphasis on dynamical aspects. The objectives in this project are to: understand charge/spin dynamics in narrow gap structures, probe the effect of magnetic impurities on the spin/charge dynamics, and develop concepts for spin based device applications. The approach at Virginia Tech is to employ ultrafast laser spectroscopy techniques, such as pump-probe and magneto-optical Kerr/Faraday effect to exploit the unique features in these structures. The proposed research work will train undergraduate and graduate researchers with a strong background in material science, laser spectroscopy, and nanoscience.

与半导体电子的早期发展的非技术类比，现在对低维磁性和狭窄间隙半导体的科学和工程迅速增长。狭窄的间隙和磁性半导体有可能导致革命性的自旋设备，在这种设备中，可以使用和操纵电荷以外的自旋程度。使用基于旋转的设备的预期优势包括提高数据处理速度和集成密度，降低电力消耗以及不挥发性。该项目的重点是研究基于INSB的窄间隙异质结构和铁磁结构（例如INMNSB）的未开发的光学和磁光学特性，并使用激光光谱技术强调了电荷和自旋动力学。拟议的活动将在边境科学项目中培训本科和研究生研究人员，以教育在量子光学，激光光谱和纳米技术方面具有广泛知识的半导体光学方面的下一代专家，以为他们的兴趣越来越较少的技术兴趣，以使他们在越来越多的兴趣的兴趣中，从而为他们提供了富有成效和令人兴奋的未来。差距半导体，例如基于INSB的异质结构。狭窄的间隙半导体提供了几种科学独特的特征，例如小有效质量，大的G因子，高内在的迁移率和大型自旋轨道耦合。在具有较大自旋轨道相互作用的半导体中，电子自旋极化与电场或电流的耦合可以为电子和光电设备中的自旋操作提供新的机会。该项目的目的是研究基于INSB的量子井的未开发的光学特性，以及III-V铁磁结构的最新成员INMNSB，重点是动力学方面。该项目中的目标是：了解狭窄间隙结构中的电荷/自旋动态，探测磁杂质对旋转/电荷动力学的影响，并为基于旋转的设备应用开发概念。弗吉尼亚理工学院的方法是采用超快激光光谱技术，例如泵探针和磁光kerr/faraday效果，以利用这些结构中的独特功能。拟议的研究工作将培训具有材料科学，激光光谱和纳米科学背景强大背景的本科和研究生研究人员。