Dislocation Nucleation and Patterning in Thin Layered Materials: Deformation and Fracture Mechanisms

薄层材料中的位错成核和图案化：变形和断裂机制

• 批准号: 0504751
• 负责人: K. Jimmy Hsia
• 金额: --
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-08-01 至 2010-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0504751&HistoricalAwards=false
• 关键词: Dislocation; Nucleation; Patterning; Thin; Layered

TECHNICAL: It has become clear that the 21st century will witness unparalleled progress in technologies: information technology, nanotechnology, biotechnology, to name a few. A common feature of many of these new developments is the miniaturization of hardware. To continue the trend of miniaturization in many emerging technologies, the behavior of materials at an increasingly smaller length scale needs to be harnessed. This research project is to address the fundamental scientific and technical issues associated with deformation and failure of thin-layered materials, in particular the dislocation activities in confined, thin metal films. In this study, experimental techniques that enable loading of small-scale specimens will be developed. TEM combined with FIB specimen fabrication will be used to determine the dislocation configurations and their evolution in confined metal thin layers. The effects of dislocations on interface adhesion and interfacial crack propagation are evaluated by measuring interfacial fracture toughness. Discrete dislocation dynamics simulations are conducted to identify critical conditions, including critical dislocation patterns and interface properties, for interfacial failure. NON-TECHNICAL: This study will significantly enhance the fundamental knowledge on dislocation nucleation and patterning in thin-layered material systems, enhance the understanding of the effects of dislocation activities on interfacial adhesion and crack propagation, and help identify the dominant mechanisms of failure in thin-layered materials. Such fundamental understanding will have significant impact on product design and development in microelectronics and MEMS industry. The project also contains a comprehensive scholar exchange and educational plan. The scholar exchange plan includes regular research meetings by phone and via the Internet, and annual mutual visits between the PI and the German collaborator at the Max Planck Institute in Stuttgart, Germany. Furthermore, the PI and the German researcher will co-advise U.S. and German graduate students working on the project so that the students are exposed to research activities at both U.S. and German institutions. Such international exchange activities serve the broader objective of training and producing a new generation of engineering students with not only solid knowledge in materials science and engineering, but also extensive international experiences.

技术：很明显，21 世纪将见证无与伦比的技术进步：信息技术、纳米技术、生物技术等等。 许多这些新发展的一个共同特点是硬件的小型化。 为了继续许多新兴技术的小型化趋势，需要利用材料在越来越小的长度尺度上的行为。该研究项目旨在解决与薄层材料变形和失效相关的基本科学和技术问题，特别是受限金属薄膜中的位错活动。 在这项研究中，将开发能够加载小尺寸样本的实验技术。 TEM 与 FIB 样品制作相结合将用于确定位错构型及其在受限金属薄层中的演化。 通过测量界面断裂韧性来评估位错对界面粘附和界面裂纹扩展的影响。进行离散位错动力学模拟以确定界面失效的关键条件，包括关键位错模式和界面特性。非技术性：这项研究将显着增强薄层材料系统中位错成核和图案化的基础知识，增强对位错活动对界面粘附和裂纹扩展影响的理解，并帮助确定薄层材料系统中失效的主要机制。 -层状材料。这种基本的理解将对微电子和MEMS行业的产品设计和开发产生重大影响。 该项目还包含全面的学者交流和教育计划。学者交流计划包括通过电话和互联网定期举行研究会议，以及PI和德国斯图加特马克斯普朗克研究所的德国合作者之间的年度互访。此外，PI和德国研究人员将共同为从事该项目的美国和德国研究生提供建议，以便学生能够接触美国和德国机构的研究活动。这些国际交流活动服务于培养和培养新一代工科学生的更广泛目标，这些学生不仅具有扎实的材料科学和工程知识，而且具有丰富的国际经验。