Dislocation Nucleation and Patterning in Thin Layered Materials: Deformation and Fracture Mechanisms

薄层材料中的位错成核和图案化：变形和断裂机制

• 批准号: 0504751
• 负责人: K. Jimmy Hsia
• 金额: --
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-08-01 至 2010-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0504751&HistoricalAwards=false
• 关键词: Dislocation; Nucleation; Patterning; Thin; Layered; Dislocation; Nucleation; Patterning; Thin; Layered

TECHNICAL: It has become clear that the 21st century will witness unparalleled progress in technologies: information technology, nanotechnology, biotechnology, to name a few. A common feature of many of these new developments is the miniaturization of hardware. To continue the trend of miniaturization in many emerging technologies, the behavior of materials at an increasingly smaller length scale needs to be harnessed. This research project is to address the fundamental scientific and technical issues associated with deformation and failure of thin-layered materials, in particular the dislocation activities in confined, thin metal films. In this study, experimental techniques that enable loading of small-scale specimens will be developed. TEM combined with FIB specimen fabrication will be used to determine the dislocation configurations and their evolution in confined metal thin layers. The effects of dislocations on interface adhesion and interfacial crack propagation are evaluated by measuring interfacial fracture toughness. Discrete dislocation dynamics simulations are conducted to identify critical conditions, including critical dislocation patterns and interface properties, for interfacial failure. NON-TECHNICAL: This study will significantly enhance the fundamental knowledge on dislocation nucleation and patterning in thin-layered material systems, enhance the understanding of the effects of dislocation activities on interfacial adhesion and crack propagation, and help identify the dominant mechanisms of failure in thin-layered materials. Such fundamental understanding will have significant impact on product design and development in microelectronics and MEMS industry. The project also contains a comprehensive scholar exchange and educational plan. The scholar exchange plan includes regular research meetings by phone and via the Internet, and annual mutual visits between the PI and the German collaborator at the Max Planck Institute in Stuttgart, Germany. Furthermore, the PI and the German researcher will co-advise U.S. and German graduate students working on the project so that the students are exposed to research activities at both U.S. and German institutions. Such international exchange activities serve the broader objective of training and producing a new generation of engineering students with not only solid knowledge in materials science and engineering, but also extensive international experiences.

技术：很明显，21世纪将见证技术中无与伦比的进步：信息技术，纳米技术，生物技术等等。 许多新事态发展的一个共同特征是硬件的小型化。 为了继续许多新兴技术的微型化趋势，需要利用材料的行为越来越小。该研究项目旨在解决与薄层材料的变形和故障相关的基本科学和技术问题，尤其是在受限的薄金属膜中的脱位活动。 在这项研究中，将开发能够加载小规模标本的实验技术。 TEM与FIB样品的结合将用于确定位错构型及其在受限金属薄层中的演变。 错位对界面粘附和界面裂纹传播的影响通过测量界面裂缝韧性评估。进行离散的脱位动力学模拟，以确定界面故障的关键条件，包括关键位错模式和界面特性。非技术：这项研究将显着增强对薄层材料系统中错位成核和模式的基本知识，增强对脱位活性对界面粘附和裂纹传播影响的理解，并有助于识别薄层材料中失败的主要机制。这种基本的理解将对微电子和MEMS行业的产品设计和开发产生重大影响。 该项目还包含一个全面的学者交流和教育计划。学者交流计划包括电话和通过互联网的定期研究会议，以及在德国斯图加特的Max Planck Institute的PI与德国合作者之间的年度相互访问。此外，PI和德国的研究人员将共同研究该项目的美国和德国研究生，以便学生参加美国和德国机构的研究活动。这样的国际交流活动是培训和生产新一代工程专业学生的更广泛目标，这些学生不仅具有材料科学和工程方面的扎实知识，而且还具有丰富的国际经验。