Student and Young Faculty Support to Attend the 34th Semiconductor Interface Specialists Conference; Arlington, VA; December 4-6, 2003

支持学生和青年教师参加第 34 届半导体接口专家会议；

• 批准号: 0400581
• 负责人: Robert Wallace
• 金额: $ 0.5万
• 依托单位: University of Texas at Dallas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-08-22 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0400581&HistoricalAwards=false
• 关键词: Student; Young; Faculty; Support; Attend

A conference on semiconductor/insulator interfaces, and the interaction between materials science, device physics, and technology will be held December 4-6, 2003 in Arlington, VA. The conference is interdisciplinary, and will cover many areas of MOS science and technology, including: alternative and high-k gate dielectric materials; physics of thin dielectrics and their interfaces; gate-dielectric conduction and breakdown; silicon carbide and its interfaces; physical and electrical characterization of si/sio2 interfaces; micro-roughness measurement, modeling, and device-related effects; hot carrier, plasma damage and radiation effects; nitrogen-containing oxides and stacked interfaces; surface cleaning technology and effects on dielectrics and interfaces; novel oxidation, deposition, and etching techniques; and theory of oxide and interface defects.An important goal of the conference is to provide an environment that encourages interplay between scientific and technological issues. The program is organized as a workshop-style conference to provide a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. Objectives are to stimulate communications among the broad community of researchers addressing semiconductor/insulator interfaces and their relationship to technology. A variety of disciplinary backgrounds-chemistry, physics, engineering and materials science, is represented and contrributes positively to the intellectual content of the Conference. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established between universities, research institutions, and industry.%%%An evaluation of the progress and status of semiconductor/insulator interfaces and related device issues along with current assessments of the most important developments will be of significant value to the understanding and enhanced utilization of electronic materials in computing, data processing, and communications. ***

关于半导体/绝缘体界面以及材料科学、器件物理和技术之间的相互作用的会议将于 2003 年 12 月 4 日至 6 日在弗吉尼亚州阿灵顿举行。本次会议是跨学科的，将涵盖MOS科学技术的多个领域，包括：替代和高k栅介质材料；薄电介质及其界面的物理学；栅极电介质传导和击穿；碳化硅及其界面； si/sio2 接口的物理和电气特性；微观粗糙度测量、建模和设备相关效应；热载流子、等离子体损伤和辐射效应；含氮氧化物和堆叠界面；表面清洁技术及其对电介质和界面的影响；新颖的氧化、沉积和蚀刻技术；会议的一个重要目标是提供一个鼓励科学和技术问题之间相互作用的环境。该计划以研讨会形式组织，为设备工程师、固态物理学家和材料科学家提供一个论坛，通过受邀和贡献的演讲正式讨论共同感兴趣的主题，并在包括海报展示在内的各种活动中非正式讨论会议。目标是促进广大研究人员之间的交流，解决半导体/绝缘体界面及其与技术的关系。化学、物理、工程和材料科学等多种学科背景的代表都出席了会议，并对会议的知识内容做出了积极贡献。除了评估该领域和未来方向的机会外，预计大学、研究机构和行业之间将建立新的联系。%%%对半导体/绝缘体界面以及相关器件问题的进展和现状进行评估根据目前对最重要发展的评估，对于理解和加强电子材料在计算、数据处理和通信方面的利用具有重要价值。 ***