U.S.-Czech Republic Materials Research on Novel Magnetic Semiconductors Based on Antimony Telluride [Sb2Te3]

美国-捷克共和国基于碲化锑[Sb2Te3]的新型磁性半导体材料研究

• 批准号: 0201114
• 负责人: Ctirad Uher
• 金额: $ 6.94万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-06-15 至 2007-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0201114&HistoricalAwards=false
• 关键词: U.S.; Czech; Republic; Materials; Research

This U.S.-Czech materials research project involving Ctirad Uher of the University of Michigan and his Czech partner, Petr Lostak at the University of Pardubice, will build upon their recently reported observation of long-range ferromagnetism in a class of ansiotropic semiconductors based on antimony telluride [Sb2Te3], doped with a minute amount of vanadium. They now plan to study the effect of transition metal ions incorporated in the crystal lattice of Sb2Te3 single crystals with the goal of identifying dopants that enhance the Curie temperature beyond the vanadium-doped value (~25K). Specifically, the researchers will examine the role of chromium, manganese, iron, nickel and cobalt. The collaborative effort benefits from the Michigan group's expertise in transport and magnetic properties of tetradymite-type structure semiconductors and the Czech partners' strengths in growth of single crystals and characterization of these materials. Results in this area of diluted magnetic semiconductors may lead to applications in information technology given the promising dual features of charge carrier transport and spin manipulation in thin films. This collaborative project in condensed matter physics fulfills the program objective of advancing scientific knowledge by enabling experts in the United States and Central Europe to combine complementary talents and share research resources in areas of strong mutual interest and competence.

这个美国-捷克材料研究项目涉及密歇根大学的 Ctirad Uher 和他的捷克合作伙伴帕尔杜比采大学的 Petr Lostak，该项目将建立在他们最近报道的基于碲化锑的一类各向异性半导体中的长程铁磁性的观察基础上[Sb2Te3]，掺杂微量钒。 他们现在计划研究 Sb2Te3 单晶晶格中过渡金属离子的影响，目标是识别能够将居里温度提高到超过钒掺杂值（~25K）的掺杂剂。 具体来说，研究人员将研究铬、锰、铁、镍和钴的作用。 此次合作得益于密歇根集团在碲辉石型结构半导体的传输和磁性方面的专业知识以及捷克合作伙伴在单晶生长和这些材料表征方面的优势。 鉴于薄膜中电荷载流子传输和自旋操纵的双重特征，稀释磁性半导体这一领域的成果可能会导致其在信息技术中的应用。 这个凝聚态物理合作项目通过使美国和中欧的专家能够结合互补的人才并在共同感兴趣和能力强的领域共享研究资源，实现了推进科学知识的计划目标。