Electronic structure and many-body effects in interfaces of oxide heterostructures

氧化物异质结构界面的电子结构和多体效应

• 批准号: 155997649
• 负责人: Professor Dr. Ralph Claessen
• 金额: --
• 依托单位: Lehrstuhl für Experimentelle Physik IV
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2009
• 资助国家: 德国
• 起止时间: 2008-12-31 至 2017-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/155997649?language=en
• 关键词: Electronic; structure; many; body; effects

Transcending the capabilities of their conventional semiconductor counterparts, oxide interfaces provide the unique opportunity to control, enhance, and create functionalities such as superconductivity, magnetism, metal-insulator transitions, or topological phases. Striking examples are the correlated interface electron systems that form in the oxide heterostructures LaAlO3/SrTiO3 (LAO/STO) and LaVO3/SrTiO3 (LVO/STO) beyond a critical film thickness. This project is devoted to the fabrication of such hybrid systems by pulsed laser deposition and the study of their chemical and electronic interface structure by high-energy spectroscopies as well as scanning probe methods. Important questions to be addressed comprise the mapping of ferromagnetic and non-magnetic metallic patches at the LAO/STO interface using the contrast from x-ray magnetic circular dichroism in a scanning x-ray microscope and the in situ investigation of gating effects. Resonant techniques and cross-sectional scanning tunneling spectroscopy will be employed to directly probe the interface states, in particular the band-filling controlled Mott transition in LVO/STO. Another focus will be on the possibility to tune the dimensionality and hence the correlations of the two-dimensional electron system using vicinal substrates. Varying the LAO thickness and the STO miscut angle, a dimensional crossover has been predicted resulting in one-dimensional chains. We will systematically explore the relevant parameter space employing scanning tunneling microscopy and spectroscopy as well as angle-resolved photoelectron spectroscopy. This topic will be complemented by the investigation of reduced titanate nanowires which can be stabilized on bare STO surfaces. A last aspect concerns the creation of novel phases by design as has been highlighted lately for perovskite or perovskite-type high-Z metal oxide bilayers with (111)-orientation. In the presence of a large spin-orbit coupling topological insulators may result if the band topology is adjusted properly by applying an electric field or by sandwiching the bilayer between different substrates.

氧化物界面超越了传统半导体同类产品的功能，提供了独特的机会来控制、增强和创建超导、磁性、金属-绝缘体转变或拓扑相等功能。引人注目的例子是在超过临界膜厚度的氧化物异质结构 LaAlO3/SrTiO3 (LAO/STO) 和 LaVO3/SrTiO3 (LVO/STO) 中形成的相关界面电子系统。该项目致力于通过脉冲激光沉积制造此类混合系统，并通过高能光谱和扫描探针方法研究其化学和电子界面结构。需要解决的重要问题包括使用扫描 X 射线显微镜中的 X 射线磁圆二色性对比来绘制 LAO/STO 界面处的铁磁和非磁性金属斑块以及选通效应的原位研究。共振技术和截面扫描隧道光谱将用于直接探测界面态，特别是 LVO/STO 中能带填充控制的莫特跃迁。另一个焦点是调整维数的可能性，从而调整使用邻近基底的二维电子系统的相关性。改变 LAO 厚度和 STO 误切角度，预计会出现维度交叉，从而产生一维链。我们将利用扫描隧道显微镜和光谱学以及角分辨光电子能谱系统地探索相关参数空间。本主题将通过对可稳定在裸露 STO 表面上的还原钛酸盐纳米线的研究进行补充。最后一个方面涉及通过设计创造新颖的相，正如最近针对具有（111）取向的钙钛矿或钙钛矿型高Z金属氧化物双层所强调的那样。在存在大自旋轨道耦合的情况下，如果通过施加电场或通过将双层夹在不同衬底之间来适当地调整能带拓扑，则可能会产生拓扑绝缘体。

项目成果

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

• DOI: 10.1103/physrevb.96.161409
• 发表时间: 2017-10-16
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: P. Schütz;D. Christensen;V. Borisov;F. Pfaff;P. Scheiderer;L. Dudy;M. Zapf;J. Gabel;Yunzhong Chen;N. Pryds;V. Rogalev;V. Strocov;C. Schlueter;Tien;H. Jeschke;R. Valentí;M. Sing;R. Claessen
• 通讯作者: R. Claessen

Fe3O4/ZnO: A high-quality magnetic oxide-semiconductor heterostructure by reactive deposition

Fe3O4/ZnO：反应沉积的高质量磁性氧化物半导体异质结构

• DOI: 10.1063/1.3540653
• 发表时间: 2011-01-07
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: M. Paul;D. Kufer;A. Müller;S. Brück;E. Goering;M. Kamp;J. Verbeeck;H. Tian;G. V. Tendeloo;N. Ingle;M. Sing;R. Claessen
• 通讯作者: R. Claessen

Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces

图案化 LaAlO3/SrTiO3 界面中的栅极可调、常开到常关忆阻转变

• DOI: 10.1063/1.4977834
• 发表时间: 2016-10-17
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: P. Maier;F. Hartmann;J. Gabel;M. Frank;S. Kuhn;P. Scheiderer;B. Leikert;M. Sing;L. Worschech;R. Claessen;S. Hofling
• 通讯作者: S. Hofling

Dimensionality-Driven Metal-Insulator Transition in Spin-Orbit-Coupled SrIrO_{3}.

自旋轨道耦合 SrIrO_{3} 中维度驱动的金属-绝缘体转变。

• DOI: 10.1103/physrevlett.119.256404
• 发表时间: 2017-06-29
• 期刊: Physical review letters
• 影响因子: 8.6
• 作者: P. Schütz;D. D. Sante;L. Dudy;J. Gabel;M. Stübinger;Martin Kamp;Yue;Massimo Capone
• 通讯作者: Massimo Capone

LaAlO3/SrTiO3 oxide heterostructures studied by resonant inelastic x-ray scattering

通过共振非弹性 X 射线散射研究 LaAlO3/SrTiO3 氧化物异质结构

• DOI: 10.1103/physrevb.82.241405
• 发表时间: 2010-12-08
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: G. Berner;S. Glawion;J. Walde;F. Pfaff;H. Hollmark;L. Duda;S. Paetel;C. Richter;J. Mannhart;M. Sing;R. Claessen
• 通讯作者: R. Claessen