U.S.-Portugal Cooperative Research: Materials Engineering and Physics of Quasimorphous Silicon Thin-Film For Its Application In Large-Area Electronics

美葡合作研究：准非晶硅薄膜的材料工程和物理及其在大面积电子器件中的应用

基本信息

批准号：
0129313
负责人：
Abdul Rafik Middya
金额：
$ 2.1万
依托单位：
Syracuse University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2002
资助国家：
美国
起止时间：
2002-04-15 至 2006-03-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=0129313&HistoricalAwards=false
关键词：
U.S.Portugal Cooperative Research Materials

项目摘要

0129313MiddyaThis three-year award for US-Portugal collaboration on the physics of quasimorphous silicon thin-film for applications in large-area electronics involves Abdul Middya and students at Syracuse University and Rodrigo F. Martins at the New University of Lisbon, Portugal. The purpose of the project is to understand how drift mobilities and other electronic properties of thin-film silicon that are sensitive to disorder-induced localization vary. The researchers will also explore why defect metastability varies between quasimorphous and conventional amorphous silicon. The US researchers bring to this collaboration expertise in electronic transport, density of-state measurements and device modeling. This is complemented by Portuguese experience in plasma-processing of materials and fabrication of devices for photovoltaics and micro-electronics. Defect metastability is one of the greatest impediments for commercialization of non-crystalline Si-based thin-film technologies. An understanding of defect metastability in amorphous silicon has technological significance for use in laptop computers, solar cells, and laboratory arrays and detectors.

0129313 Middyathis在美国葡萄球菌在大区域电子产品中应用的美国葡萄球菌物理学合作三年奖，涉及Abdul Middya和Syracuse University和Rodrigo University的学生，Rodrigo F. Martins在洛斯邦新大学的葡萄牙大学。该项目的目的是了解对无序诱导的定位敏感的薄膜硅的漂移迁移率和其他电子性能如何变化。研究人员还将探讨为什么缺陷的亚愿能在准形态和常规无定形硅之间有所不同。美国研究人员将电子运输，状态测量密度和设备建模的密度带入了这种协作专业知识。葡萄牙在材料的等离子体处理以及用于光伏和微电脑的设备的制造方面得到了补充。缺陷亚稳定性是非结晶基薄膜技术商业化的最大障碍之一。对无定形硅缺陷亚稳定性的理解对于在笔记本电脑，太阳能电池以及实验室阵列和检测器中的使用具有技术意义。