Interfacial structure/chemistry of spintronics devices with Heusler alloy electrodes

具有 Heusler 合金电极的自旋电子器件的界面结构/化学

• 批准号: 151082910
• 负责人: Professor Dr. Andreas Hütten
• 金额: --
• 依托单位: Research Center for Magnetic and Spintronic Materials (CMSM)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2009
• 资助国家: 德国
• 起止时间: 2008-12-31 至 2013-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/151082910?language=en
• 关键词: Interfacial; structure; chemistry; spintronics; devices

Discovering the structure/chemistry property relationship of interfaces in spintronic devices comprising half metal Heusler alloys as electrodes. Beside the interface between Heusler alloys and oxide barriers used in tunneling magnetoresistance (TMR) devices, special attention will be paid to Heusler alloys in contact to metallic spacer materials and semi-conductors in order to open up new applications in current-perpendicularrto-plane giant magnetoresistance (CPP-GMR) and spin-injectors. Functional TMR and GMR layer structures are produced by sputter deposition and molecular beam epitaxy. Selected materials of barriers and spacer layers and the composition of the Heusler alloys will be varied to determine the effect on interfacial structure, order and local chemistry of the respective interfaces. To clarify the effect of interface segregation, the local composition of interfaces will be directly modified by controlled dusting in molecular beam epitaxy. These prepared structures will be electrically and magnetically characterized after suitable heat treatment. To detect smallest variations of interfacial composition, state-of-the-art laser-assisted atom probe tomography will be applied. High resolution and analytical TEM will be used to characterize ordering state and morphology of the intermetallic Heusler alloys.

发现界面的结构/化学性质关系，包括一半金属螺旋素合金作为电极。除了用于隧道磁力磁力磁力（TMR）设备的助母合金和氧化物屏障之间的界面外，还将特别注意与金属间隔物材料和半导体接触的Heusler合金，以便在当前 - 杂种型巨型磁场（CPP-GMR）和cpp-gmrs（CPPP-gmr）中打开新的应用。功能性TMR和GMR层结构是由溅射沉积和分子束外延产生的。选定的屏障和间隔层的材料以及Heusler合金的组成将有所不同，以确定对各个界面的界面结构，顺序和局部化学的影响。为了阐明界面分离的效果，将通过在分子束外延中受控灰尘直接修饰界面的局部组成。这些制备的结构将在适当的热处理后进行电和磁性。为了检测界面组成的最小变化，将应用最先进的激光辅助原子探针断层扫描。高分辨率和分析性TEM将用于表征金属间旋转合金的有序状态和形态。

项目成果

Nano-analysis of Ta/FeCoB/MgO tunnel magneto resistance structures

• DOI: 10.1016/j.actamat.2016.06.045
• 发表时间: 2016-09-01
• 期刊: ACTA MATERIALIA
• 影响因子: 9.4
• 作者: Bouchikhaoui, H.;Stender, P.;Schmitz, G.
• 通讯作者: Schmitz, G.

Co2FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers

• DOI: 10.1063/1.4927638
• 发表时间: 2015-07
• 期刊: AIP Advances
• 影响因子: 1.6
• 作者: J. Rogge;W. Hetaba;J. Schmalhorst;H. Bouchikhaoui;P. Stender;D. Baither;G. Schmitz;A. Hütten