Small Grants for Exploratory Research: Nanofabrication Techniques Based on Two Levels of Molecular Self-Assembly Self-Assembled Monolayers & Ordering of Block Copolymers

探索性研究小额资助：基于两级分子自组装自组装单层的纳米制造技术

• 批准号: 9708944
• 负责人: Paul Nealey
• 金额: $ 5万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-03-01 至 1999-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9708944&HistoricalAwards=false
• 关键词: Small; Grants; Exploratory; Research; Nanofabrication

ABSTRACT CTS-9708944 Nealy, Paul F. U of Wisconsin, Madison The proposal's short-term research goal is to demonstrate the enabling technology for the resist system described below. This proposal for a Small Grants for Exploratory Research supports the investigation of the interfacial phenomena that govern the ordering of thin films of amphiphilic block copolymers on patterned hydrophobic/hydrophilic surfaces. Optical lithography, the most widespread technique for the fabrication of microelectronic devices, is approaching the lower limit (100 nm) in the size of features that it can produce. At the same time, there is little doubt that the need for denser, faster and more powerful circuits will continue. Smaller features (50nm) can be produced with electron beam writing or stylus lithography. These processes, however, are currently serial and will require significant development for high-volume commercial applications. Lithographies based on shorter wavelength radiation, for example extreme ultra violet (EUV) and X-ray lithography (XRL), have the required resolution. but no satisfactory resist materials exist for applications below 100 nm. Current resist systems rely on kinetic processes such as diffusion and dissolution. The principles that govern these systems cannot be blindly extrapolated in the nanometer regime because of vanishing small tolerances and margins. New resist systems for the nanometer regime must be able to produce features of molecular dimensions with tolerances and margins of atomic dimensions. The proposed long -term research goal is to develop a nanofabrication technique based on interfacial phenomena and two levels of molecular: self-assembled monolayers (SAMs) and ordering of thin films of block because it leads to equilibrium structures that are at (or close to) thermodynamic minimum. Self-assembled monolayers (SAMs) will be formed on the surface of a substrate, and the SAMs will patterned in the plane of the amphiphilic block copolymer will be depos ited on the substrate, and surface energy will govern the ordering of the strongly segregating copolymer upon annealing. If the dimensions of the patterned SAMs are of the same order of magnitude as the dimensions of the polymer molecules, then structure in the polymer film will be induced normal to the substrate. Regions of low surface energy will be covered with the hydrophobic block of the polymer, and regions of high surface energy will be covered with the hydrophilic block of the polymer. It is expected that the order to propagate will pass through the entire thickness of the deposited film. One of the blocks of the block copolymer will be selectively etched. Arbitrarily shaped patterns with lateral dimensions of tens of nanometers will be transferred from the patterned SAMs to resist material (the remaining block of the copolymer) at the resolution of X-ray lithography.

摘要CTS-9708944 NEALY，威斯康星州的Paul F. U，麦迪逊，该提案的短期研究目标是证明下面描述的抵抗系统的能力技术。 这项针对探索性研究的小补助金的提议支持了对界面现象的研究，该现象控制了在图案化的疏水/亲水性表面上对两亲块块共聚物的薄膜的排序。 光刻是微型设备制造的最广泛的技术，它以其可以产生的功能的大小接近下限（100 nm）。 同时，毫无疑问，对更密集，更快，更强大的电路的需求将继续。 较小的功能（50nm）可以用电子束写作或手写笔印刷产生。 但是，这些过程目前是序列的，需要大量的商业应用程序进行重大开发。 基于较短的波长辐射（例如极端超紫色（EUV）和X射线光刻（XRL））具有所需的分辨率的光刻。但是对于低于100 nm的应用，没有令人满意的抵抗材料。 当前的抵抗系统依赖于动力学过程，例如扩散和溶解。 由于较小的公差和边缘消失，无法在纳米制度中盲目推断这些系统的原则。 纳米机制的新电阻系统必须能够产生具有公差和原子尺寸边缘的分子维度的特征。 提出的长期研究目标是开发基于界面现象和两个分子水平的纳米化技术：自组装单层（SAM）和块薄膜的订购，因为它会导致平衡结构，这些平衡结构位于（或接近）热力学最小值。 自组装的单层（SAM）将在底物的表面形成，并且SAMS将在两亲性块共聚物的平面上图案化，并将其沉积在底物上，表面能将控制在退火时强烈隔离的共聚物的订购。 如果图案化的SAM的尺寸与聚合物分子的尺寸相同的数量级，则聚合物膜中的结构将被诱导到底物。 低表面能的区域将被聚合物的疏水块覆盖，高表面能的区域将被聚合物的亲水块覆盖。 预计传播的顺序将通过沉积膜的整个厚度。 块共聚物的块之一将被选择性地蚀刻。 在X射线光刻的分辨率下，任意形状的图案将从图案化的SAM中转移至纳米数十亿的横向尺寸，以抵抗材料（共聚物的其余块）。