Improved III-V Optoelectronic Performance and Reliability Through Carbon Tetrabromide Doping

通过四溴化碳掺杂提高 III-V 光电性能和可靠性

• 批准号: 9526483
• 负责人: David Miller
• 金额: $ 33.68万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-10-01 至 1999-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9526483&HistoricalAwards=false
• 关键词: Improved; III; Optoelectronic; Performance; Reliability

9526483 Miller The goal of this project is to investigate and develop III-V semiconductor-based optoelectronic emitters, detectors, and electronic circuits with improved performance. The approach focuses on an important materials issue which affects many present devices and integrated optoelectronic circuits: controlled heavy p-type doping in an epitaxial structure, using carbon. Gaseous, carbon tetrabromide, CBr4 will be used for carbon doping in solid source molecular beam epitaxy (MBE). Stable, low-resistance p-type contacts, improved laser lifetime, and improved heterojunction bipolar transistor (HBT) reliability will be developed and demonstrated. The common p-type dopant for solid-source MBE is Be. At doping concentrations exceeding about lxlO^19/cm3, Be can diffuse rapidly during epitaxial growth and also during device operation. This phenomenon makes it difficult to grow high-performance microwave HBTs with good yield and reproducibility using Be, and also leads to a rapid degradation in device performance. As a result, commercial suppliers of epitaxial material grown by MBE find it virtually impossible to sell wafers for use in HBTs. There is also evidence that a similar phenomenon limits the performance of lasers grown with Be. The use of carbon rather than Be in solid-source MBE growth will reopen the growth of high reliability, highly p doped, high performance devices to this technique. The approach of this project is to use carbon tetrabromide, CBr4, for p type doping in solid-source MBE growth. The project couples the growth by MBE of AlGaAs, GaAs, AlInAs, and GaInAs materials on GaAs and InP substrates closely to the design, fabrication, and testing of HBTs, lasers, and detectors. This is an extension to optical emitters, detectors, and device reliability of the principal investigators' prior work on CBr4 doping. ***

9526483 Miller 该项目的目标是研究和开发基于 III-V 族半导体的光电发射器、探测器和具有改进性能的电子电路。该方法重点关注影响许多现有器件和集成光电电路的重要材料问题：使用碳在外延结构中进行受控重 p 型掺杂。气态四溴化碳 CBr4 将用于固源分子束外延 (MBE) 中的碳掺杂。我们将开发并演示稳定、低电阻的 p 型接触、延长的激光器寿命以及提高的异质结双极晶体管 (HBT) 的可靠性。 固体源 MBE 的常见 p 型掺杂剂是 Be。当掺杂浓度超过约1x10^19/cm3时，Be可以在外延生长期间以及器件操作期间快速扩散。这种现象使得使用Be生长高性能微波HBT变得困难，并且具有良好的产率和重现性，并且还会导致器件性能迅速下降。因此，MBE 生长的外延材料的商业供应商发现实际上不可能出售用于 HBT 的晶圆。还有证据表明，类似的现象限制了铍生长的激光器的性能。在固源 MBE 生长中使用碳而不是铍，将重新利用该技术来生长高可靠性、高 p 掺杂、高性能器件。 该项目的方法是使用四溴化碳 (CBr4) 在固源 MBE 生长中进行 p 型掺杂。该项目将 GaAs 和 InP 衬底上的 AlGaAs、GaAs、AlInAs 和 GaInAs 材料的 MBE 生长与 HBT、激光器和探测器的设计、制造和测试紧密结合起来。这是主要研究人员之前关于 CBr4 掺杂工作的光学发射器、探测器和设备可靠性的延伸。 ***